Patents by Inventor Toshinori Takagi

Toshinori Takagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070281081
    Abstract: A vacuum deposition method is provided. In the vacuum deposition for evaporating a sublimation evaporation material, the gas sealed-type heating container 11 has the blast aperture 14 and an area for evaporating the evaporation material by the radiation heat from the inner surface thereof. The holder 15 holds an evaporation material in a region in which the evaporation material does not evaluate due to the heat transferred from the heating container 11. Thus, the generated vapor is emitted from the blast aperture 14 into the deposition subject surface outside the container.
    Type: Application
    Filed: January 21, 2005
    Publication date: December 6, 2007
    Inventors: Hiroki Nakamura, Toshinori Takagi
  • Publication number: 20030198570
    Abstract: In a sterilizing apparatus, a first electrode is provided in a chamber, and a target to be sterilized is supported by the first electrode. The first AC power supply is connected to the first electrode to supply AC power to the first electrode such that a plasma is generated around the first electrode. The DC pulse power supply is connected to the first electrode to supply DC pulse power to the first electrode such that ions or electrons are accelerated toward the target.
    Type: Application
    Filed: April 16, 2003
    Publication date: October 23, 2003
    Applicants: MITSUBISHI HEAVY INDUSTRIES, LTD., TSURU GAKUEN Educational Institution
    Inventors: Yuji Asahara, Mitsuhiro Yoshida, Toshiaki Katsura, Ikuo Wakamoto, Toshinori Takagi, Takeshi Tanaka
  • Patent number: 5786659
    Abstract: A field emission type electron source capable of permitting a resistance value between a cathode wiring and each of emitter cones to be set at substantially the same level and increasing packaging density of the emitter cones. The electron source includes stripe-like cathode wirings arranged on an insulating substrate. The cathode wirings each are formed with a plurality of windows, so that a plurality of island-like cathode conductors and resistance layers different in resistance value from each other are formed separate from the cathode wiring. Then, a resistance layer, an insulating layer and a gate electrode are formed thereon. The gate electrode and insulating layer are formed with apertures in a manner to be common to both, in which the emitter cones are arranged, resulting in emission of electrons from the emitter cones of each group unit being rendered uniform.
    Type: Grant
    Filed: November 29, 1994
    Date of Patent: July 28, 1998
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Toshinori Takagi, Masateru Taniguchi, Shigeo Itoh, Teruo Watanabe, Takahiro Niiyama
  • Patent number: 5189341
    Abstract: An electron emitting element capable of preventing pollution of the emitter due to absorption of gas thereon, to thereby ensure stable emission of electrons over a long period of time even in a low vacuum atmosphere. The electron emitting element is constructed so as to permit a part of electrons emitted from one of emitters to impinge on the other of the emitters being ready for emission to clean it.
    Type: Grant
    Filed: May 16, 1991
    Date of Patent: February 23, 1993
    Assignee: Futaba Denshi Kogyo Kabushiki Kaisha
    Inventors: Shigeo Itoh, Teruo Watanabe, Hisashi Nakata, Toshinori Takagi
  • Patent number: 4789500
    Abstract: An optical control element is disclosed which is capable of accomplishing the simplifying, small-sizing and lightening of the structure. The optical control element comprises a substrate exhibiting both an optical function and a magnetic function and a Cd.sub.1-x Mn.sub.x Te directly deposited on the substrate.
    Type: Grant
    Filed: March 28, 1986
    Date of Patent: December 6, 1988
    Assignee: Futaba Denshi Kogyo Kabushiki Kaisha
    Inventors: Kiyoshi Morimoto, Toshinori Takagi, Kakuei Matsubara
  • Patent number: 4774413
    Abstract: An ion emmisive head for fusing a metal to emit ion beam is disclosed, wherein a fused metal is designed to infiltrate through a porous portion for flow control and to reach an extremely sharpened needle which is provided after infiltration and wherefrom the fused metal is converted to ion beam by electrical action. Thus, ionized metallic beam is rendered to have smaller width or more focused ray. Submicron technology used in the IC industry, for instance, desires far thinner, finer beam line to attain more compact circuits, which need will be responded in the present invention by disposing a tipping needle to extend out of a porous tip portion which receives the fused metal from melting zone. Appropriate combination of sharpness at the needle point and provision of a beam guiding electrode in neighborhood of an emitting needle point enable to produce about 0.1 micron beam width by prevention of plasma ball which will otherwise diffuse the emitted beam.
    Type: Grant
    Filed: October 16, 1986
    Date of Patent: September 27, 1988
    Assignees: Nihon Denshizairyo Kabushiki Kaisha, Toshinori Takagi, Junzo Ishikawa
    Inventors: Masao Okubo, Kiyoshi Sugaya, Toshinori Takagi, Junzo Ishikawa
  • Patent number: 4755438
    Abstract: An aluminum film deposited copper material capable of being effectively used as a wiring and a heat sink for various electronic elements, an electrical wire, a cable, and the like while preventing diffusion and penetration of copper atoms into a different element. The copper element includes an aluminum film formed on a copper base according to an ion beam deposition techniques. Thus, the aluminum film may be deposited on the copper base with adhesion and denseness sufficient to block diffusion or exudation of copper atoms into the deposited aluminum film. Also, the aluminum film may be deposited in a thickness sufficient to ensure physical and electrical characteristics of copper.
    Type: Grant
    Filed: September 22, 1987
    Date of Patent: July 5, 1988
    Assignee: Futaba Denshi Kogyo Kabushiki Kaisha
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4724106
    Abstract: A process for preparing an organic film comprising the steps of ejecting an organic material in a gaseous state from an injection nozzle into a vacuum region to form clusters due to adiabatic expansion, subjecting the clusters to an intermediate state necessary for forming polymers due to abstraction and the like occurring in a part of atoms forming the clusters, and effecting polymerization reaction of the clusters on a substrate, thereby to form a dense organic film of a high quality and a high bonding strength.
    Type: Grant
    Filed: May 29, 1986
    Date of Patent: February 9, 1988
    Assignee: Futaba Denshi Kogyo Kabushiki Kaisha
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4638217
    Abstract: An ion source having a sintered metal head for ionizing various substances is disclosed. This ion source comprises a container made of a material which has a higher fusing point than that of the substance which is to be ionized, and a tip formed of a molded sintered metal of a higher fusing point than that of the substance which is to be ionized. The head is formed into a nearly conical shape and has a porosity capable of allowing the substance which is to be ionized to infiltrate therethrough in the molten state and the tip of the head is positioned at the opening of one end of the container for the ionizable material and arranged in such a manner that it protrudes beyond the end of the container.
    Type: Grant
    Filed: March 18, 1983
    Date of Patent: January 20, 1987
    Assignee: Nihon Denshizairyo Kabushiki Kaisha
    Inventors: Masao Okubo, Kiyoshi Sugaya, Toshinori Takagi, Junzo Ishikawa
  • Patent number: 4622236
    Abstract: A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a semiconductor element therein. The BN film is formed by the growth on a substrate in a manner to be preferentially orientated to a predetermined axis thereof. A process for preparing such film is also disclosed.
    Type: Grant
    Filed: September 23, 1985
    Date of Patent: November 11, 1986
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4598231
    Abstract: A microwave ion source comprising a discharge chamber provided with an ion source seed material inlet and an ion outlet, a means for radiating microwaves in said discharge chamber, a means for applying a magnetic filed to the inside of said discharge chamber, a means for supplying ion source seed material to said discharge chamber through said ion source seed material inlet and an ion extraction electrode, said ion extraction electrode being made of magnetic material having a resistivity of less than 10.sup.6 .OMEGA.cm and a permeability of more than 5. The present microwave ion source has an improved ion current efficiency.
    Type: Grant
    Filed: February 1, 1983
    Date of Patent: July 1, 1986
    Assignee: Nissin-High Voltage Co. Ltd.
    Inventors: Koji Matsuda, Toshinori Takagi, Junzo Ishikawa
  • Patent number: 4581113
    Abstract: A process for forming an amorphous silicon film consisting of silicon (Si) and hydrogen (H) bonded in a monohydride state by a cluster ion beam deposition which comprises the step of impinging ionized and non-ionized silicon (Si) and hydrogen (H) upon a substrate within a vacuum chamber in which hydrogen is maintained at a pressure of about 10.sup.-2 Torr or less.
    Type: Grant
    Filed: March 20, 1981
    Date of Patent: April 8, 1986
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4565741
    Abstract: A boron nitride (BN) film is disclosed having excellent electrical insulating and heat conduction characteristics and capable of acting as seeds for epitaxially growing a semiconductor film thereon which has a crystallizability sufficient to incorporate a semiconductor element therein. The BN film is formed by the growth on a substrate in a manner to be preferentially orientated to a predetermined axis thereof. A process for preparing such film is also disclosed.
    Type: Grant
    Filed: February 28, 1984
    Date of Patent: January 21, 1986
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4563610
    Abstract: A negative-ion source comprising means for discharging alkaline metal for discharging neutral alkaline metal particles together with alkaline metal ion particles; an electrode for generating negative ions which can serve as an extraction electrode for extracting said alkaline metal ion particles and a target bombarded with said alkaline metal ion particles and which provides with a hold for holding negative-ion seed material in the portion bombarded with said alkaline metal ion particles and an aperture for letting out negative-ion particles; and a negative-ion extraction electrode for said negative-ion particles. The present negative-ion source has an improved ion current efficiency and is compact size.
    Type: Grant
    Filed: March 23, 1983
    Date of Patent: January 7, 1986
    Assignee: Nissin-High Voltage Co., Ltd.
    Inventors: Toshinori Takagi, Junzo Ishikawa, Koji Matsuda
  • Patent number: 4559901
    Abstract: An ion beam deposition apparatus capable of uniformly distributing an ionized vaporized material on a desired area of a substrate is disclosed. The apparatus includes an accelerating electrode and a deflecting electrode each arranged between an ionization region and a substrate.
    Type: Grant
    Filed: January 30, 1985
    Date of Patent: December 24, 1985
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4539054
    Abstract: An amorphous film formed of a transition element-silicon compound which has excellent electric and optical characteristics is disclosed. The compound is amorphous and has a Si content of 60-85 at. %.
    Type: Grant
    Filed: May 2, 1983
    Date of Patent: September 3, 1985
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4535195
    Abstract: A photoelectromotive force element capable of being manufactured at a low cost and exhibiting an excellent photoelectric conversion efficiency. The element comprises one conductivity type semiconductor substrate and the other conductivity type iron oxide film deposited on the semiconductor substrate.
    Type: Grant
    Filed: January 18, 1984
    Date of Patent: August 13, 1985
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4523211
    Abstract: A semiconductor device having multi-layered structure is disclosed. The semiconductor device comprises a first semiconductor layer, a second semiconductor layer, a beryllium oxide (BeO) film for insulating between the first and second semiconductor layers, wherein at least one of the semiconductor layers is grown on the BeO film to be regulated by the crystalline structure of the beryllium oxide.
    Type: Grant
    Filed: March 8, 1983
    Date of Patent: June 11, 1985
    Assignee: Futaba Denshi Kogyo Kabushiki Kaisha
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4500742
    Abstract: An iron silicide thermoelectric conversion element wherein a part of one of components of the silicide is substituted by oxygen atom to form either Si-O bond or Fe-O bond in a matrix of the compound to provide either p-type conductivity or n-type conductivity as desired.
    Type: Grant
    Filed: January 26, 1984
    Date of Patent: February 19, 1985
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi
  • Patent number: 4500741
    Abstract: An energy conversion element is disclosed which is capable of efficiently converting light and thermal energies into electrical energy. The element comprises a thermoelectric material and a photoelectric material which are different in type and joined together and is capable of efficiently converting solar energy incident on the junction between the both materials into electrical energy. The thermoelectric material is most suitably formed of a transition element-silicon compound.
    Type: Grant
    Filed: May 25, 1983
    Date of Patent: February 19, 1985
    Assignee: Futaba Denshi Kogyo K.K.
    Inventors: Kiyoshi Morimoto, Toshinori Takagi