Abstract: In an X-ray imaging device according to a first embodiment, an X-ray detector has a configuration in which scintillator elements are defined by light-shielding walls in a lattice shape. Among X-rays incident on the X-ray detector, X-rays incident on the light-shielding walls are not converted into scintillator light and are transmitted by the X-ray detector. Accordingly, by causing X-rays to be incident on the X-ray detector in which the scintillator elements are defined by the light-shielding walls in a lattice shape, an area in which X-rays 3a transmitted by a subject M are incident on the X-ray detector can be limited to an arbitrary range. Accordingly, since a detection mask can be omitted in the X-ray imaging device which is used for EI-XPCi, it is possible to reduce a manufacturing cost of the X-ray imaging device.

Abstract: The method of producing this diffraction grating includes a step of generating a moire by a periodic pattern projected onto a plurality of unit diffraction gratings and a plurality of unit diffraction gratings, and a step of adjusting so that the extending directions of the gratings are aligned by relatively rotating at least one of a plurality of unit diffractions with respect to at least one of the others of the plurality of unit diffractions.

Abstract: A graphite substrate is processed to have surface unevenness in a range of 1 ?m to 8 ?m. Thereby, a semiconductor film to be laminated on the graphite substrate has a stable film quality, and thus adhesion of the graphite substrate and the semiconductor layer can be enhanced. When an electron blocking layer is interposed between the graphite substrate and the semiconductor layer, the electron blocking layer is thin and thus the surface unevenness of the graphite substrate is transferred onto the electron blocking layer. Consequently, the electron blocking layer also has surface unevenness approximately in such range. Thus, almost the same effect as a configuration in which the semiconductor layer is directly connected to the graphite substrate can be produced.

Abstract: A X-ray detector having enhanced X-ray sensitivity, which enables dual energy imaging having high diagnostic performance. This X-ray detector includes: scintillator elements which are partitioned by light blocking walls and which convert low-energy X-rays to light; and scintillator elements which are partitioned by light blocking walls and which convert high-energy X-rays to light. When seen from the direction of incidence of the X-rays, the positional pattern of the light blocking walls and that of the light blocking walls are configured so as not to be in alignment with each other. Accordingly, the X-rays incident on the X-ray detector are converted to light by at least either one of the scintillator elements and are finally outputted as X-ray detection signals.

Abstract: Provided is a radiation phase difference imaging apparatus in which a separation distance between a phase grating and a radiation detector is optimized. The separation distance between the phase grating and a detection surface of an FPD is determined based on the magnitude of noise corruption in a self-image projected onto the detection surface. The magnitude of the effect of the noise is used as a basis for assessing the separation distance. It is determined whether a distance Zd is appropriate for imaging, based on the magnitude of noise corruption in the self-image in a self-image picture which is obtained when the distance Zd is the distance between the phase grating and the detection surface of the FPD. The separation distance can thus be optimized based on actual conditions of an actual X-ray source that emits a plurality of types of X-rays.

Abstract: Provided is a structure configured such that even when resin, such as methacryl resin, exhibiting a low adhesion to a metal thin film is used, the resin and the metal thin film are firmly stacked in close contact with each other, and a film formation method capable of manufacturing a structure in which a metal thin film is, with a high adhesion, formed on a resin work exhibiting a low adhesion to the metal thin film, wherein the structure is configured such that an Al thin film 102 is, by sputtering, formed on a work W made of methacryl resin to form a stack of the work W and the Al thin film 102, and has a mixed region 101 of Al, Si, O, and C between the work W and the Al thin film 102. In the mixed region 101, Al is covalently bound to any one of Si, O, and C, or Al, Si, O, and C form a diffusion mixed layer.

Abstract: A film formation device for forming a metal thin film on a polycarbonate work molded by a resin molding machine, comprises: a film former including a chamber configured to house the work, and a sputtering electrode including a target material and disposed in the chamber; and a carrier configured to carry the work molded by the resin molding machine from the resin molding machine to the chamber within such a short time period that no moisture adheres to a surface of the work.

Abstract: In an X-ray strip detector, at least one joining semiconductor film are formed on surface of a sensitive semiconductor film, on the part of X-strips and Y-strips, that is sensitive to incident X-rays to generate electric charge, and on at least an entire sensitive region of a conversion film. The joining semiconductor film has higher resistance value than resistance value of the sensitive semiconductor film. Accordingly, when the electric charge generated in the sensitive semiconductor film are collected in the X-strips and the Y-strips, movement of the electric charge into other adjacent strip electrodes is avoidable. Consequently, crosstalk can be suppressed that the electric charge leak to the adjacent strip electrodes.

Abstract: Disclosed is an X-ray apparatus with an X-ray tube controller. The X-ray tube controller controls an X-ray tube so as for X-rays emitted from the X-ray tube to have an energy width whose upper limit is more than the minimum K-shell absorption edge of K-shell absorption edges for elements forming a conversion film and is equal to or less than a preset value depending on a K-shell absorption edge corresponding to a characteristic X-ray whose energy influences the blur. Accordingly, the less number of ejected K-shell characteristic X-rays is obtainable than the case when the emitted X-rays have an energy width whose upper limit is more than a preset value depending on the K-shell absorption edge corresponding to the characteristic X-ray whose energy influences the blur. This allows a suppressed blurred image generated from ejected K-shell characteristic X-rays outside a pixel area where X-rays enter to introduce a photoelectric effect.

Abstract: In an X-ray strip detector, at least one joining semiconductor film are formed on surface of a sensitive semiconductor film, on the part of X-strips and Y-strips, that is sensitive to incident X-rays to generate electric charge, and on at least an entire sensitive region of a conversion film. The joining semiconductor film has higher resistance value than resistance value of the sensitive semiconductor film. Accordingly, when the electric charge generated in the sensitive semiconductor film are collected in the X-strips and the Y-strips, movement of the electric charge into other adjacent strip electrodes is avoidable. Consequently, crosstalk can be suppressed that the electric charge leak to the adjacent strip electrodes.

Abstract: When a conventional idea of determining a setting condition from a parameter of resolution (image resolution) is changed to use an X-ray tube with a stable focus size, setting conditions are determined from a focus size ? [?m] of the X-ray tube. The minimum radiography size b [?m] is settable from the focus size ? [?m] and ??b/2. A magnification rate ? is settable from the set minimum radiography size b [?m], a pixel pitch d [?m] of an X-ray detector, and b?/d?5. Consequently, the minimum radiography size b [?m] and the magnification rate ? are each settable with use of the X-ray tube having the stable focus size ? [?m]. This results in stable radiography or fluoroscopy through magnifying an object in minute size.

Abstract: A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.

Abstract: Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.

Abstract: A graphite substrate is accommodated into a chamber where vacuum drawing is performed via a pump. Thereafter, carbon is heated under vacuum, whereby impurities in the carbon are evaporated causing the carbon to be purified. The carbon in the graphite substrate is purified, achieving suppression of the impurities as donor/acceptor elements and also metallic elements in the semiconductor layer of 0.1 ppm or less, the impurities being contained in the carbon in the graphite substrate. As a result, occurrence of leak current or an abnormal leak point enables to be suppressed, and thus abnormal crystal growth in the semiconductor layer enables to be suppressed.

Abstract: A method of manufacturing a radiation detector, comprising: a charge blocking layer generating step of generating a charge blocking layer on a substrate; a CdTe-layer generating step of generating a CdTe layer so as to cover the charge blocking layer on the substrate, the CdTe layer undergoing heterojunction to the charge blocking layer and being composed of a chlorine-doped polycrystalline film; and a heat treatment step of performing a heat treatment on the substrate having the CdTe layer formed thereon.

Abstract: A power supply apparatus for a detector of this invention provides a plurality of power supplies for the detector for detecting light or radiation, and includes a power output device capable of individually outputting the plurality of power supplies to be provided for the detector, a detection device for detecting a power supply state of a utility power source, a control device for carrying out an abnormal stopping process to stop the power supplies at the power output device in a predetermined order upon determination based on a result of detection by the detection device that an abnormality has occurred, and an electric storage device for supplying electric power to the control device, when the control device determines that an abnormality has occurred, to permit the control device to carry out the abnormal stopping process.

Abstract: According to a radiation detector manufacturing method, a radiation detector and a radiographic apparatus of this invention, Cl-doped CdZnTe is employed for a conversion layer, with Cl concentration set to 1 ppm wt to 3 ppm wt inclusive, and Zn concentration set to 1 mol % to 5 mol % inclusive. This can form the conversion layer optimal for the radiation detector. Consequently, the radiation detector manufacturing method, the radiation detector and the radiographic apparatus can be provided which can protect the defect level of crystal grain boundaries by Cl doping in a proper concentration, and can further maintain integral sensitivity to radiation, while reducing leakage current, by Zn doping in a proper concentration.

Abstract: A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer.

Abstract: The construction of this invention includes an active matrix substrate, an amorphous selenium layer, a high resistance layer, a gold electrode layer, an insulating layer and an auxiliary plate laminated in this order. In one aspect of the present invention, the insulating layer has an inorganic anion exchanger added thereto in order to provide a radiation detector which prevents void formation and pinhole formation in the amorphous semiconductor layer and carrier selective high resistance film, without accumulating electric charges on the auxiliary plate. The inorganic anion exchanger adsorbs chloride ions in the insulating layer, thereby preventing destruction of X-ray detector due to the chloride ions drawn to the gold electrode layer.

Abstract: Although Cl (chlorine) is no longer supplied in the course of a first process in which a detecting layer formed by a polycrystalline film or a polycrystalline lamination film by vapor deposition or sublimation is formed, an additional source (e.g., HCl of Cl-containing gas) other than a source is supplied at the start or in the course of the first process. Thus, the detecting layer as the polycrystalline film or the polycrystalline lamination film of CdTe, ZnTe, or CdZnTe can be doped with Cl uniformly in a thickness direction from the start until the end of the first process in film formation. As a result, uniform crystal particles and uniform detection characteristics can be achieved.