Abstract: An absolute encoder includes: a scale including an optical pattern that includes code patterns for a plurality of cycles; an illumination unit that outputs light for illuminating the scale; a light detection unit that detects light from the scale; a section determination unit that determines, for a region of the optical pattern divided into a plurality of sections, the section to which a code string belongs; and an absolute position calculation unit that obtains an absolute position of the scale on the basis of the section determined and the code string. When N is the number of the cycles of the code patterns on the scale, in a case where N is equal to two, the number of the sections is three or more, and in a case where N is equal to three or more, the number of the sections is N or more.

Abstract: A rotation speed detector includes: a base material to be attached to a rotating body; a first magnetic pole having an arcuate strip shape and provided on the base material; a second magnetic pole having an arcuate strip shape and provided on the base material; and a power generation element including a magnetic wire configured to cause a large Barkhausen effect, and a pickup coil. The power generation element is arranged to face the first magnetic pole and the second magnetic pole so that a longitudinal direction of the magnetic wire is provided along a radial direction of the first magnetic pole and the second magnetic pole. A non-magnetic gap is provided between the first magnetic pole and the second magnetic pole.

Abstract: A hydrogen supply system is configured to supply hydrogen to a fuel-cell vehicle by using a receptacle for hydrogen transport, and includes: a filling unit provided at a hydrogen filling facility and configured to fill the receptacle with hydrogen; a management unit configured to calculate a transport timing at which the hydrogen-filled receptacle is transported to a business facility that operates the fuel-cell vehicle; a transport unit configured to transport the hydrogen-filled receptacle to the business facility in accordance with the transport timing; and a disposition unit configured to dispose the hydrogen-filled receptacle transported to the business facility at a place to which the fuel-cell vehicle is capable of accessing to have a refill of the hydrogen in the business facility.

Abstract: The present invention is a catalyst comprising: (i) a compound comprising at least one first metal element selected from boron, magnesium, zirconium, and hafnium, and (ii) an alkali metal element, wherein the compound and the alkali metal element are supported on a carrier having silanol groups, an average particle size of the compound of the first metal element is 0.4 nm or more and 50 nm or less, the catalyst satisfies the following formula (1): 0.9 × 10 ? - 21 ? ( g / number ) ? ? X / ( Y × Z ) < 10.8 × 10 ? - 21 ? ( g / number ) , formula ? ( 1 ) in which X is a molar ratio of the alkali metal element to the at least one first metal element in the catalyst, Y is a BET specific surface area of the catalyst (m2/g), and Z is a number of the silanol groups per unit area (number/nm2).

Abstract: A method for embedding ruthenium in a recess formed on a surface of a substrate includes: forming a ruthenium layer in a region including a bottom portion of the recess by supplying a gas including, as a ruthenium precursor, a ruthenium compound that does not contain oxygen and carbon atoms to the substrate having a metal exposed on a bottom surface of the recess; and subsequently embedding ruthenium in the recess so as to cover the ruthenium layer by supplying a gas including, as a ruthenium precursor, Ru3(CO)12 to the substrate.

Abstract: The present invention is a catalyst comprising: (i) a compound comprising at least one first metal element selected from boron, magnesium, zirconium, and hafnium, and (ii) an alkali metal element, wherein the compound and the alkali metal element are supported on a carrier having silanol groups, an average particle size of the compound of the first metal element is 0.4 nm or more and 50 nm or less, the catalyst satisfies the following formula (1): 0.90×10?21(g/number)?X/(Y×Z)<10.8×10?21(g/number)??formula (1), in which X is a molar ratio of the alkali metal element to the at least one first metal element in the catalyst, Y is a BET specific surface area of the catalyst (m2/g), and Z is a number of the silanol groups per unit area (number/nm2).

Abstract: Provided is a method for etching a metal on a substrate, the etching method including (a) a step for exposing the metal to a halogen-containing gas and modifying a surface layer of the metal to be a halide-containing surface layer, (b) a step for exposing the halide-containing surface layer to a gas that contains carbon (C) and oxygen (O) and removing the halide-containing surface layer, and (c) a step for repeating the (a) step and the (b) step in the stated order.

Abstract: A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Abstract: An object of the present invention is to provide a catalyst that enables production of an unsaturated carboxylic acid and/or unsaturated carboxylic acid ester represented by methyl methacrylate with high selectivity. The object is achieved by a catalyst including: one or more elements selected from boron, magnesium, zirconium, hafnium, and titanium; one or more elements selected from alkali metal elements; and silica; the catalyst having a peak height ratio I2/I1 of 0 to 1.2, wherein I1 represents the peak height at 417±10 cm?1, and I2 represents the peak height at 1050±10 cm?1, as obtained by Raman spectroscopy.

Abstract: A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Abstract: Provided is an abnormality detection system that includes a first controller configured to control a substrate processing apparatus and a second controller configured to control a device provided in the substrate processing apparatus according to an instruction from the first controller, thereby detecting an abnormality in the device. The second controller includes a storage unit configured to collect status signals for the device for a predetermined time and at a predetermined sampling interval in a predetermined cycle and accumulate the collected status signals for the device, and the first controller includes an abnormality determination unit configured to acquire the accumulated status signals for the device from the second controller at a time interval equal to or longer than the predetermined time, and determine presence or absence of an abnormality in the device.

Abstract: A film forming method according to an aspect of the present disclosure is a film forming method of embedding a film in a recess formed in a surface of a substrate, and includes a first processing including (a) adsorbing a raw material gas into the recess, (b) forming a film by reacting a reaction gas with the raw material gas, and (c) activating a plasma generation gas including a hydrogen gas and a noble gas by plasma and supplying the gas into the recess to shrink the film. A plurality of cycles each including (a) and (b) are executed, and at least a part of the plurality of cycles includes (c).

Abstract: A film forming method for forming a metal carbide film on a substrate, includes: forming a metal carbide film including a first metal element and a second metal element different from the first metal element on the substrate by performing, multiple times in a time-sharing manner: supplying a first precursor gas including the first metal element and not including carbon to the substrate; supplying a second precursor gas including the second metal element and including carbon to the substrate; and supplying a reducing agent to the substrate, wherein concentrations of the first metal element and the second metal element included in the metal carbide film are controlled by adjusting the order of the supplying the first precursor gas, the supplying the second precursor gas, and the supplying the reducing agent.

Abstract: A filling method according to one aspect of the present disclosure is a method of filling a recess formed in a surface of a substrate with a metal oxide film. The method includes forming the metal oxide film by supplying a metallic raw material gas and an oxidant to the recess, and etching a part of the metal oxide film by supplying an etching gas including at least one selected from a group including SOCl2 and (COCl)2 to the metal oxide film.

Abstract: A film forming method of forming a metal-containing aluminum oxide layer on a substrate having at least a metal layer on a surface thereof includes: a first operation of forming an aluminum oxide layer on the substrate with an aluminum-containing precursor and an oxidant; and a second operation of forming a metal oxide layer on the substrate with the oxidant and a precursor including a first metal other than aluminum. Assuming that a dielectric constant of only an oxide of the first metal is ?1 and a molar ratio of the first metal to all metals in the metal-containing aluminum oxide layer is X, the formed metal-containing aluminum oxide layer satisfies a following condition (1) or (2): X>? and ?1<25×X/(3X?1) . . . (1); and X??. . . (2).

Abstract: A method for fabricating a semiconductor device is described that includes forming a base layer over a top layer of a substrate, the base layer includes a silicon based dielectric having a thickness less than or equal to 5 nm and greater than or equal to 0.5 nm; forming a photoresist layer over the base layer, the photoresist including a first side and an opposite second side; exposing a first portion of the photoresist layer to a pattern of extreme ultraviolet (EUV) radiation from the first side; exposing a second portion of the photoresist layer with a pattern of electron flux from the second side, the electron flux being directed into the photoresist layer from the base layer in response to the EUV radiation; developing the exposed photoresist layer to form a patterned photoresist layer; and transferring the pattern of the patterned photoresist layer to the base layer and the top layer.

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Abstract: The invention discloses a catalyst comprising a silica support, a modifier metal and a catalytic alkali metal. The silica support has a multimodal pore size distribution comprising a mesoporous pore size distribution having an average pore size in the range 2 to 50 nm and a pore volume of said mesopores of at least 0.1 cm3/g, and a macroporous pore size distribution having an average pore size of more than 50 nm and a pore volume of said macropores of at least 0.1 cm3/g. The level of catalytic alkali metal on the silica support is at least 2 mol %. The modifier metal is selected from Mg, B, Al, Ti, Zr and Hf. The invention also discloses a method of producing the catalyst, a method of producing an ethylenically unsaturated carboxylic acid or ester in the presence of the catalyst, and a process for preparing an ethylenically unsaturated acid or ester in the presence of the catalyst.

Abstract: There is provided a method of performing a surface processing on a substrate having a metal layer formed on a bottom portion of a recess formed in an insulating film, the method including: supplying a halogen-containing gas into a processing chamber in which the substrate is loaded; and removing a metal oxide from the bottom portion of the recess using the halogen-containing gas.