Patents by Inventor Toshio Kamiya

Toshio Kamiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electric elements and circuits utilizing amorphous oxides
    Publication number: 20060113565
    Abstract: Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
    Type: Application
    Filed: November 9, 2005
    Publication date: June 1, 2006
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Katsumi Abe, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Display
    Publication number: 20060113536
    Abstract: An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.
    Type: Application
    Filed: November 9, 2005
    Publication date: June 1, 2006
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Field effect transistor manufacturing method
    Publication number: 20060110867
    Abstract: Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.
    Type: Application
    Filed: November 9, 2005
    Publication date: May 25, 2006
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hisato Yabuta, Masafumi Sano, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Amorphous oxide and field effect transistor
    Publication number: 20060108636
    Abstract: A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
    Type: Application
    Filed: November 9, 2005
    Publication date: May 25, 2006
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Sensor and image pickup device
    Publication number: 20060108529
    Abstract: A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.
    Type: Application
    Filed: November 9, 2005
    Publication date: May 25, 2006
    Applicants: CANON KABUSHIKI KAISHA, TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Keishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura
  • Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film
    Publication number: 20050039670
    Abstract: Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.
    Type: Application
    Filed: October 31, 2002
    Publication date: February 24, 2005
    Inventors: Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kazushige Ueda, Masahiro Hirano, Toshio Kamiya