Abstract: A connection destination switching control method executed by a communication apparatus, the connection destination switching control method comprising: a data acquisition step of acquiring observed values of received power of signals transmitted from a base station; a prediction processing step of predicting future received power by using the observed values acquired in the data acquisition step as input data into a prediction model; and a connection destination switching processing step of executing control for handover based on the future received power predicted in the prediction processing step.

Abstract: Techniques are disclosed for managing message redundancy for one or more devices. In one example, a device receives a message from a second device using a transmission protocol, the message comprising a control instruction for an accessory device and a message identifier. The device can transmit using the transmission protocol, a second message to the accessory device, the second message comprising the control instruction and a second message identifier. The device can receive a third message from the second device using a second transmission protocol, the second message comprising a second control instruction for the accessory device and a third message identifier. The device can compare the third message identifier with the message identifier to determine whether the second control instruction is a duplicate of the control instruction. The device can determine whether to transmit the third message to the accessory device based on the comparison.

Abstract: A signal processing method and system are provided for delivering spatialized sound using highly optimized inverse filters to deliver narrow localized beams of sound from the included speaker array. The inventive method can be used to provide private listening areas in a public space and provide spatialization of source material for individual users to create a virtual 3D audio effect. In a binaural mode, a speaker array provides two targeted beams aimed towards the primary user's ears—one discrete beam for the left ear and one discrete beam for the right ear.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: 2-Oxabicyclo[3.3.0]octane compounds represented by the following formula (1) (compound (1)); an optical resolver comprising at least one of the compounds (1); a process for producing the compounds (1) which comprises reacting a compound (2) or compound (3) with an alcohol (5) in the presence of an acid catalyst; a method of separating a diastereomer mixture of a compound (1); and a method of optically resolving an alcohol with the optical resolver. [In the formulae, R1 to R10 each represents hydrogen atom, etc.; R11 represents an alkyl group, etc.; R12 represents a hydrocarbon group, etc.; R13 represents a hydrocarbon group, etc.; and A represents acetyl group, etc.

Abstract: A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

Abstract: A dry etching gas comprising a C4-6 fluorine compound which has an ether bond or carbonyl group and one or more fluorine atoms in the molecule and is constituted only of carbon, fluorine, and oxygen atoms and in which the ratio of the number of fluorine atoms to the number of carbon atoms (F/C) is 1.9 or lower (provided that the compound is neither a fluorine compound having one cyclic ether bond and one carbon-carbon double bond nor a saturated fluorine compound having one carbonyl group); a mixed dry etching gas comprising the dry etching gas and at least one gas selected from the group consisting of rare gases, O2, O3, CO, CO2, CHF3, CH2F2, CF4, C2F6, and C3F8; and a method of dry etching which comprises converting either of these dry etching gases into a plasma and processing a semiconductor material with the plasma.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: The present invention relates to a semiconductor device comprising an insulation film consisting of a fluoridation carbon film that has been subjected to thermal history of 420° C. or lower. The feature of the present invention is that an amount of hydrogen atoms included in the fluoridation carbon film is 3 atomic % or less before the fluoridation carbon film is subjected to the thermal history.

Abstract: 2-Oxabicyclo[3.3.0]octane compounds represented by the following formula (1) (compound (1)); an optical resolver comprising at least one of the compounds (1); a process for producing the compounds (1) which comprises reacting a compound (2) or compound (3) with an alcohol (5) in the presence of an acid catalyst; a method of separating a diastereomer mixture of a compound (1); and a method of optically resolving an alcohol with the optical resolver. In the formulae, R1 to R10 each represents hydrogen atom, etc.; R11 represents an alkyl group, etc.; R12 represents a hydrocarbon group, etc.; R13 represents a hydrocarbon group, etc.; and A represents acetyl group, etc.

Abstract: An ethylene-?-olefin copolymer resin having a melt index of 0.5 to 2.0 g/l0 minutes and a density of 0.905 to 0.920 g/cm3 and showing such a temperature raising elution fractionation pattern that the amount of fractions corresponding to a high density polyethylene is 8 to 25% of the total elution and that the amount of fractions eluted up to a temperature of T40° C. is 40% of the total elution and the amount of fractions eluted up to a temperature of T70° C. is 70% of the total elution, wherein the value of 30/(T70?T40) is 2.0 to 3.3% ° C.

Abstract: A dry etching method wherein a resist film is irradiated with radiation having a wavelength of not more than 195 nm to form a resist pattern having a minimum line width of not more than 200 nm, and the substrate having the resist pattern formed thereon is subjected to dry etching using a fluorine-containing compound having 4 to 6 carbon atoms and at least one unsaturated bond as an etching gas. As the fluorine-containing compound, perfuloro-2-pentyne, perfuloro-2-butyne, nonafluoro-2-pentene and perfluoro-2-pentene are preferably used. Perfuloro-2-pentyne is produced by a process wherein a 1,1,1-trihalo-2,2,2-trifluoroethane is allowed to react with pentafluoropropionaldehyde to give a 2-halo-1,1,1,4,4,5,5,5-octafluoro-2-pentene, and the thus-produced halo-octafluoro-2-pentene is dehydrohalogenated.

Abstract: A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluoro-cyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

Abstract: A gas for plasma reaction comprising a chainlike perfluoroalkyne having 5 or 6 carbon atoms, preferably perfluoro-2-pentyne. This plasma reaction gas is suitable for dry etching for formation of a fine pattern, for plasma CVD for formation of a thin film, and for plasma ashing. The plasma reaction gas is synthesized by contacting a dihydrofluoroalkane compound or a monohydrofluoroalkene compound with a basic compound.

Abstract: A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of the remainder, is not larger than 200 ppm by volume. This high-purity gas for plasma reaction can be produced by (1) a process of distilling crude octafluorocyclopentene in an inert gas of group 0, or (2) a process of distilling crude octafluorocyclopentene into a purity of at least 99.9% by volume, and then, removing an impurity remainder.

Abstract: Porous calcium fluoride having a large surface area, a method for producing the same, a catalyst (for hydrogenation reaction in particular) using the porous calcium fluoride as a carrier with superior activity, selectivity, and durability, and a method for producing trihydrofluorocarbon using the catalyst. The porous calcium fluoride having a BET surface area of 20 m2/g to 200 m2/g is prepared by reacting soda lime with hydrogen fluoride. The carried cataryst (for hydrogenation reaction in particurar) is obtained by causing a metal or metal compound to be carried on carrier formed of the porous calcium fluoride. Trihydrofluorocarbon (2) is produced by causing a fluooroalkene (1) to contact hydrogen in the presence of the catalyst for hydrogenation reaction. wherein X denotes a halogen atom, Rf1 and Rf2 individually denote a fluorine or a parafluoroalkyl group, and Rf1 may be bonded to Rf2 to form a ring.

Abstract: An ethylene-&agr;-olefin copolymer resin having a melt index of 0.5 to 2.0 g/10 minutes and a density of 0.905 to 0.920 g/cm3 and showing such a temperature raising elution fractionation pattern that the amount of fractions corresponding to a high density polyethylene is 8 to 25% of the total elution and that the amount of fractions eluted up to a temperature of T40° C. is 40% of the total elution and the amount of fractions eluted up to a temperature of T70° C. is 70% of the total elution, wherein the value of 30/(T70−T40) is 2.0 to 3.3%/° C.

Abstract: Compounds each having a —CH2—CHF— group and a number of carbon atoms of 4 or above are prepared by hydrogenating a compound having a —CCl═CF— group and a number of carbon atoms of 4 or above in the presence of a noble metal catalyst in a liquid or gas phase. The compound having a —CCl═CF— group and a number of carbon atoms of 4 or above is preferably a C4-C10 alicyclic one, and can be prepared by reacting a compound having a —CCl═CCl— group and a number of carbon atoms of 4 or above with a fluorinating agent.