Abstract: The objective of the present invention is to make it possible to manufacture, with a high yield, a metal deposition type variable-resistance element with which variability of a program voltage and a leakage current under a high resistance state is reduced, while the program voltage is reduced. This variable-resistance element comprises: a first electrode which is embedded in a first insulating film and which supplies metal ions, an upper surface of the first electrode being exposed out of the first insulating film by means of an opening portion in a second insulating film covering the first insulating film; a metal deposition type variable-resistance film which covers the opening portion and is in contact with the upper surface of the first electrode; and a second electrode in contact with the upper surface of the variable-resistance film.

Abstract: A purpose of the invention is to provide a crossbar switch for reducing the layout areas of a crossbar switch and peripheral circuits thereof. A crossbar switch of the invention comprises: a plurality of first wires extending in a first direction; a plurality of second wires extending in a second direction; a plurality of third wires extending in a third direction; a plurality of fourth wires extending in a fourth direction; and a plurality of switch cells connected to the first and second wires. The first wires are skew relative to the second and fourth wires, while the third wires are skew relative to the second and fourth wires. The switch cells are connected to the third and fourth wires, and further, the third wires are also connected to the switch cells connected to the first wires adjacent to the respective first wires; or alternatively, further, the fourth wires are also connected to the switch cells connected to the second wires adjacent to the respective second wires.

Abstract: The semiconductor device according to the present invention has an upper electrode, a first lower layer wiring that also functions as a lower electrode, an electrical resistance-changing film interposed between the upper electrode and the first lower layer wiring, a second lower layer wiring, and a contact plug, the contact plug connecting to the upper electrode and to the second lower layer wiring. The present invention yields a semiconductor device with which it is possible to dispose elements in high density while maintaining the reliability and manufacturing yield of the electrical resistance-changing element.

Abstract: This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.

Abstract: This semiconductor device is provided with: a variable resistance first switch (103), which has a first terminal and a second terminal, and which has the resistance value thereof varied when an applied voltage exceeds a reference value; a variable resistance second switch (104), which has a third terminal and a fourth terminal, and which forms an intermediate node (105) by having the third terminal connected to the second terminal, and has the resistance state thereof varied when an applied voltage exceeds a reference value; first wiring (101) connected to the first terminal; second wiring (102), which is connected to the fourth terminal, and which extends in the direction intersecting the first wiring (101) in a planar view; a first selection switch element (106) connected to the first wiring (101); and a second selection switch element (107) connected to the second wiring (102).

Abstract: A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode

Abstract: A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode.

Abstract: The present invention addresses the problem of inhibiting the evolution of a poisoning gas to eliminate wiring-pattern resolution failures and thereby forming a desired wiring layer structure to provide functional elements having an improved property yield. This method for forming multi-layered copper interconnect on a semiconductor substrate comprises: forming a multilayer resist structure to form a given resist pattern on a substrate including an interlayer dielectric film that has via holes which have been formed in part thereof and filled with an SOC layer, the multilayer resist structure comprising an SOC layer, an SOG layer, an SiO2 layer, and a chemical amplification type resist superposed in this order from the substrate side; conducting etching using the resist pattern as a mask to form a pattern for a wiring layer and via plugs; and forming the wiring layer and the via plugs in the pattern.

Abstract: A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.

Abstract: The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to the variable resistance layer of the non-volatile switching element, the electrode that does not feed metal ions to the variable resistance layer when the switch is in the ON state is made from a ruthenium alloy. The ruthenium alloy includes ruthenium and a metal in which the standard Gibbs energy of forming ?G when metal ions are generated from the metal is higher in the negative direction than ?G of ruthenium. As a result, it becomes possible to maintain the low-resistance state in the ON state for a longer period of time without increasing the amount of electrical current required when a switch is made between the ON state and the OFF state.

Abstract: In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element according to the present invention is equipped with a first variable resistance element equipped with a first input/output terminal and a first connection terminal, a second variable resistance element equipped with a second input/output terminal and a second connection terminal, and a rectifying element equipped with a control terminal and a third connection terminal, wherein the first connection terminal, the second connection terminal and the third connection terminal are connected to one another.

Abstract: The present invention addresses the problem of inhibiting the evolution of a poisoning gas to eliminate wiring-pattern resolution failures and thereby forming a desired wiring layer structure to provide functional elements having an improved property yield. This method for forming multi-layered copper interconnect on a semiconductor substrate comprises: forming a multilayer resist structure to form a given resist pattern on a substrate including an interlayer dielectric film that has via holes which have been formed in part thereof and filled with an SOC layer, the multilayer resist structure comprising an SOC layer, an SOG layer, an SiO2 layer, and a chemical amplification type resist superposed in this order from the substrate side; conducting etching using the resist pattern as a mask to form a pattern for a wiring layer and via plugs; and forming the wiring layer and the via plugs in the pattern.

Abstract: A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order.

Abstract: The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property. The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second electrode are laminated in this order, and the wiring of the multiple wiring layers also serves as the first electrode.

Abstract: A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.

Abstract: This semiconductor device is provided with: a variable resistance first switch (103), which has a first terminal and a second terminal, and which has the resistance value thereof varied when an applied voltage exceeds a reference value; a variable resistance second switch (104), which has a third terminal and a fourth terminal, and which forms an intermediate node (105) by having the third terminal connected to the second terminal, and has the resistance state thereof varied when an applied voltage exceeds a reference value; first wiring (101) connected to the first terminal; second wiring (102), which is connected to the fourth terminal, and which extends in the direction intersecting the first wiring (101) in a planar view; a first selection switch element (106) connected to the first wiring (101); and a second selection switch element (107) connected to the second wiring (102).

Abstract: This variable resistance element is provided with a variable resistance film, a first electrode, which is disposed in contact with one surface of the variable resistance film, and a second electrode, which is disposed in contact with the other surface of the variable resistance film. The first and the second electrodes have corner portions, respectively, and the distance between the corner portions of the first and the second electrodes is set equal to the shortest distance between the first and the second electrodes. Furthermore, the variable resistance element has a third electrode, which is disposed on the one surface of the variable resistance film.

Abstract: A resistance changing element according to the present invention comprises a first electrode (101) and a second electrode (103); and an ion conducting layer (102) that is formed between the first electrode (101) and the second electrode (103) and that contains at least oxygen and carbon.

Abstract: A semiconductor device comprises: reconfigurable logic circuit that includes plurality of resistance change elements; logical configuration of the reconfigurable logic circuit being decided depending on whether each of plurality of resistance change elements is in first resistance state or in second resistance state whose resistance value is lower than resistance value of first resistance state; resistance value monitor circuit that includes resistance change element pre-programmed to the first resistance state; the resistance value monitor circuit detecting whether or not pre-programmed resistance change element retains the first resistance state; and controller that, in case it is detected that resistance change element provided in resistance value monitor circuit doe not retain first resistance state, applies voltage used in programming from second resistance state to first resistance state to resistance change element retaining first resistance states, out of plurality of resistance change elements provid

Abstract: A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.