Patents by Inventor Toshiya Endo

Toshiya Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220009092
    Abstract: An object of the present invention is to ascertain parts of an object that are approachable by finger portions of a hand mechanism. In an image information processing device, a housing container is retrieved from an image by using a first retrieval frame, and an object is retrieved from the image by using a second retrieval frame. A plurality of determination points are set in advance on the second retrieval frame, and a predetermined approach direction is set for each determination point. A determination is then made as to whether or not the finger portions of the hand mechanism can be caused to approach parts of one object, existing within the second retrieval frame, that correspond respectively to the determination points set on the second retrieval frame from the predetermined approach directions set in relation to the determination points.
    Type: Application
    Filed: October 4, 2019
    Publication date: January 13, 2022
    Applicant: THK CO., LTD.
    Inventors: Toshiya Watanabe, Yoshikazu Matsuo, Shinji Kawabata, Yoshimasa Endo, Kenji Hidaka, Daisuke Kawabata
  • Patent number: 11133420
    Abstract: A semiconductor device with high on-state current is provided.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: September 28, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Iida, Ryota Hodo, Kentaro Sugaya, Ryu Komatsu, Toshiya Endo, Shunpei Yamazaki
  • Publication number: 20210184042
    Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
    Type: Application
    Filed: February 4, 2021
    Publication date: June 17, 2021
    Inventors: Tetsuhiro TANAKA, Mitsuhiro ICHIJO, Toshiya ENDO, Akihisa SHIMOMURA, Yuji EGI, Sachiaki TEZUKA, Shunpei YAMAZAKI
  • Patent number: 10950734
    Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.
    Type: Grant
    Filed: January 16, 2019
    Date of Patent: March 16, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Sachiaki Tezuka, Tetsuhiro Tanaka, Toshiya Endo, Mitsuhiro Ichijo
  • Patent number: 10923600
    Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
    Type: Grant
    Filed: July 25, 2018
    Date of Patent: February 16, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Mitsuhiro Ichijo, Toshiya Endo, Akihisa Shimomura, Yuji Egi, Sachiaki Tezuka, Shunpei Yamazaki
  • Publication number: 20200335630
    Abstract: A semiconductor device with high on-state current is provided.
    Type: Application
    Filed: December 19, 2018
    Publication date: October 22, 2020
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Yuta IIDA, Ryota HODO, Kentaro SUGAYA, Ryu KOMATSU, Toshiya ENDO, Shunpei YAMAZAKI
  • Patent number: 10812737
    Abstract: There is provided an on-vehicle display controller including a video data acquiring unit configured to acquire captured video data obtained through imaging by an imager that is configured to image surroundings of a vehicle, a detecting unit configured to detect at least one following vehicle in the captured video data, an identifying unit configured to identify a lower part of the following vehicle detected by the detecting unit, a display video data generating unit configured to set a clipping area of the captured video data so as to include the lower part of the following vehicle identified by the identifying unit, and generate display video data by performing clipping the clipping area from the captured video data, and a display controller configured to cause a display used in the vehicle to display the display video data generated by the display video data generating unit.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 20, 2020
    Assignee: JVC KENWOOD Corporation
    Inventors: Yuki Wada, Takeshi Yamazaki, Toshiya Endo, Hiroki Takahashi, Takuji Teruuchi
  • Patent number: 10715744
    Abstract: A vehicular display control device includes a video acquiring unit configured to acquire video data captured by a rear camera configured to capture a rear view of a vehicle, a frequency detecting unit configured to detect a frequency of a driver's action in the vehicle for changing a range of view with respect to a display installed in front of the driver, a video data generating unit configured to clip, when the frequency of the driver's action detected by the frequency detecting unit becomes high, a clipping range in the captured video data acquired by the video acquiring unit wider than a clipping range before the frequency of the driver's action becomes high to generate video data for a predetermined time, and a display controller configured to cause a display installed in front of the driver to display the video data generated by the video data generating unit.
    Type: Grant
    Filed: November 7, 2018
    Date of Patent: July 14, 2020
    Assignee: JVC KENWOOD Corporation
    Inventors: Yuki Wada, Takuji Teruuchi, Toshiya Endo, Takeshi Yamazaki, Hiroki Takahashi
  • Patent number: 10522397
    Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.
    Type: Grant
    Filed: March 15, 2019
    Date of Patent: December 31, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Hideomi Suzawa, Sachiaki Tezuka, Tetsuhiro Tanaka, Toshiya Endo, Mitsuhiro Ichijo
  • Patent number: 10468531
    Abstract: One object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. Another object is to manufacture a highly reliable semiconductor device in a high yield. In a top-gate staggered transistor including an oxide semiconductor film, as a first gate insulating film in contact with the oxide semiconductor film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon fluoride and oxygen; and as a second gate insulating film stacked over the first gate insulating film, a silicon oxide film is formed by a plasma CVD method with use of a deposition gas containing silicon hydride and oxygen.
    Type: Grant
    Filed: October 14, 2016
    Date of Patent: November 5, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kunio Kimura, Mitsuhiro Ichijo, Toshiya Endo
  • Publication number: 20190237586
    Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.
    Type: Application
    Filed: March 15, 2019
    Publication date: August 1, 2019
    Inventors: Yuta ENDO, Hideomi SUZAWA, Sachiaki TEZUKA, Tetsuhiro TANAKA, Toshiya ENDO, Mitsuhiro ICHIJO
  • Publication number: 20190165179
    Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.
    Type: Application
    Filed: January 16, 2019
    Publication date: May 30, 2019
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Sachiaki TEZUKA, Tetsuhiro TANAKA, Toshiya ENDO, Mitsuhiro ICHIJO
  • Patent number: 10236389
    Abstract: A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an etching mask is formed over the second layer; the second layer is etched using the etching mask until the first layer is exposed to form a third layer; a selective growth layer is formed on a top surface and a side surface of the third layer; the first layer is etched using the third layer and the selective growth layer until the third insulator is exposed to form a fourth layer; and the third insulator is etched using the third layer, the selective growth layer, and the fourth layer until the semiconductor is exposed to form a first insulator.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: March 19, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yuta Endo, Hideomi Suzawa, Sachiaki Tezuka, Tetsuhiro Tanaka, Toshiya Endo, Mitsuhiro Ichijo
  • Publication number: 20190075253
    Abstract: A vehicular display control device includes a video acquiring unit configured to acquire video data captured by a rear camera configured to capture a rear view of a vehicle, a frequency detecting unit configured to detect a frequency of a driver's action in the vehicle for changing a range of view with respect to a display installed in front of the driver, a video data generating unit configured to clip, when the frequency of the driver's action detected by the frequency detecting unit becomes high, a clipping range in the captured video data acquired by the video acquiring unit wider than a clipping range before the frequency of the driver's action becomes high to generate video data for a predetermined time, and a display controller configured to cause a display installed in front of the driver to display the video data generated by the video data generating unit.
    Type: Application
    Filed: November 7, 2018
    Publication date: March 7, 2019
    Inventors: Yuki Wada, Takuji Teruuchi, Toshiya Endo, Takeshi Yamazaki, Hiroki Takahashi
  • Publication number: 20190068899
    Abstract: There is provided an on-vehicle display controller including a video data acquiring unit configured to acquire captured video data obtained through imaging by an imager that is configured to image surroundings of a vehicle, a detecting unit configured to detect at least one following vehicle in the captured video data, an identifying unit configured to identify a lower part of the following vehicle detected by the detecting unit, a display video data generating unit configured to set a clipping area of the captured video data so as to include the lower part of the following vehicle identified by the identifying unit, and generate display video data by performing clipping the clipping area from the captured video data, and a display controller configured to cause a display used in the vehicle to display the display video data generated by the display video data generating unit.
    Type: Application
    Filed: October 25, 2018
    Publication date: February 28, 2019
    Inventors: Yuki Wada, Takeshi Yamazaki, Toshiya Endo, Hiroki Takahashi, Takuji Teruuchi
  • Patent number: 10192995
    Abstract: A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second insulator, a third insulator, and a fourth insulator. The first conductor and the semiconductor partly overlap with each other with the first insulator positioned therebetween. The second conductor and the third conductor have regions in contact with the semiconductor. The semiconductor has a region in contact with the second insulator. The fourth insulator has a first region and a second region. The first region is thicker than the second region. The first region has a region in contact with the second insulator. The second region has a region in contact with the third insulator. The fourth conductor and the second insulator partly overlap with each other with the fourth insulator positioned therebetween.
    Type: Grant
    Filed: April 18, 2016
    Date of Patent: January 29, 2019
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Sachiaki Tezuka, Tetsuhiro Tanaka, Toshiya Endo, Mitsuhiro Ichijo
  • Publication number: 20180350997
    Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
    Type: Application
    Filed: July 25, 2018
    Publication date: December 6, 2018
    Inventors: Tetsuhiro TANAKA, Mitsuhiro ICHIJO, Toshiya ENDO, Akihisa SHIMOMURA, Yuji EGI, Sachiaki TEZUKA, Shunpei YAMAZAKI
  • Patent number: 10141337
    Abstract: A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided. Further, a semiconductor device which has favorable electrical characteristics by using a transistor including a silicon semiconductor and a transistor including an oxide semiconductor is provided. Two nitride insulating films having different functions are provided between the transistor including a silicon semiconductor and the transistor including an oxide semiconductor. Specifically, a first nitride insulating film which contains hydrogen is provided over the transistor including a silicon semiconductor, and a second nitride insulating film which has a lower hydrogen content than the first nitride insulating film and functions as a barrier film against hydrogen is provided between the first nitride insulating film and the transistor including an oxide semiconductor.
    Type: Grant
    Filed: October 3, 2017
    Date of Patent: November 27, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tetsuhiro Tanaka, Yoshinori Ieda, Toshiyuki Miyamoto, Masafumi Nomura, Takashi Hamochi, Kenichi Okazaki, Mitsuhiro Ichijo, Toshiya Endo
  • Patent number: 10056497
    Abstract: A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: August 21, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuhiro Tanaka, Mitsuhiro Ichijo, Toshiya Endo, Akihisa Shimomura, Yuji Egi, Sachiaki Tezuka, Shunpei Yamazaki
  • Patent number: 10050132
    Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.
    Type: Grant
    Filed: July 31, 2017
    Date of Patent: August 14, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Akihisa Shimomura, Yasumasa Yamane, Yuhei Sato, Tetsuhiro Tanaka, Masashi Tsubuku, Toshihiko Takeuchi, Ryo Tokumaru, Mitsuhiro Ichijo, Satoshi Toriumi, Takashi Ohtsuki, Toshiya Endo