Patents by Inventor Toshiya Kumagai
Toshiya Kumagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9159898Abstract: An oxide superconducting thin film includes a substrate, and an intermediate layer and a superconducting layer provided in this order on the substrate. The intermediate layer has an average thickness of from 10 nm to 20 nm and a surface roughness Ra of 0.5 nm or less. The superconducting layer is formed on a surface of the intermediate layer and includes an oxide superconductor as a main component. A superconducting fault current limiter including the oxide superconducting thin film is also provided.Type: GrantFiled: May 31, 2012Date of Patent: October 13, 2015Assignees: FURUKAWA ELECTRIC CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Hajime Kasahara, Norio Matsui, Masakazu Matsui, Naoto Edo, Kengo Nakao, Toshiya Kumagai, Takaaki Manabe, Mitsugu Sohma
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Patent number: 9105794Abstract: An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided.Type: GrantFiled: May 30, 2012Date of Patent: August 11, 2015Assignees: FURUKAWA ELECTRIC CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGYInventors: Kengo Nakao, Hajime Kasahara, Masakazu Matsui, Norio Matsui, Naoto Edo, Toshiya Kumagai, Takaaki Manabe, Mitsugu Sohma
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Patent number: 9096440Abstract: A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals and oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, the provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and the main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein the support body is irradiated with the laser light during a period between the steps (1) and (2) from a surface of the support body, on the opposite side of the surface coated with the solution of the organic compound of the metals for forming the superconductive material.Type: GrantFiled: July 31, 2007Date of Patent: August 4, 2015Assignees: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY, THE JAPAN STEEL WORKS, LTD.Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
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Publication number: 20150162518Abstract: A source material solution for forming an oxide superconductor is provided, the source material solution being used for forming on a substrate an RE 123 oxide superconductor into which flux pinning points are introduced, using a coating-pyrolysis process. Nanoparticles of a predetermined amount for forming pinning points are dispersed in the solution in which an organometallic compound is dissolved for forming the oxide superconductor. The nanoparticles have a particle size of 5 to 100 nm. The organometallic compound is an organometallic compound containing no fluorine. Accordingly, even in an FF-MOD process, the material for pins can easily be added, a treatment for thermally decomposing a metal complex and a heat treatment for generating a pin compound are unnecessary, and the particle size of the pins can suitably be controlled.Type: ApplicationFiled: June 8, 2012Publication date: June 11, 2015Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Genki Honda, Tatsuoki Nagaishi, Kei Hanafusa, Iwao Yamaguchi, Hiroaki Matsui, Wakichi Kondo, Toshiya Kumagai
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Publication number: 20150105261Abstract: An oxide superconducting thin film wherein nanoparticles functioning as flux pins are dispersed in the film is provided. The oxide superconducting thin film wherein the nanoparticles in the oxide superconducting thin film have a dispersing density of 1020 particles/m3 to 1024 particles/m3 is provided. The oxide superconducting thin film wherein the nanoparticles have a particle diameter of 5 nm to 100 nm is provided. A method of manufacturing an oxide superconducting thin film wherein a predetermined amount of a solution obtained by dissolving nanoparticles functioning as flux pins in a solvent is added to a solution obtained by dissolving an organometallic compound in a solvent to prepare a source material solution for an oxide superconducting thin film, and the source material solution is used to manufacture the oxide superconducting thin film through a coating-pyrolysis process is provided.Type: ApplicationFiled: May 31, 2012Publication date: April 16, 2015Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD.Inventors: Tatsuoki Nagaishi, Genki Honda, Iwao Yamaguchi, Takaaki Manabe, Takeshi Hikata, Hiroaki Matsui, Wakichi Kondo, Hirofumi Yamasaki, Toshiya Kumagai
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Patent number: 8871363Abstract: Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.Type: GrantFiled: September 1, 2010Date of Patent: October 28, 2014Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Tetsuo Tsuchiya, Masami Nishikawa, Tomohiko Nakajima, Toshiya Kumagai, Takaaki Manabe
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Patent number: 8865628Abstract: Provided is a coating solution where, upon producing a rare-earth superconductive composite metal oxide film by means of a coating-pyrolysis method, cracks are not generated in the heat treatment process for eliminating organic components, even when the thickness of the rare-earth superconductive film produced in a single coating is 500 nm or more, and without having to repeat the coating and annealing process. A solution for producing a rare-earth superconductive film which is made into a homogeneous solution by dissolving, in a solvent formed by adding a polyhydric alcohol to a univalent linear alcohol having a carbon number of 1 to 8 and/or water, a metal complex coordinated, relative to metal ions of a metallic species containing rare-earth elements, barium and copper, with pyridine and/or at least one type of tertiary amine, at least one type of carboxylic acid having a carbon number of 1 to 8, and, as needed, an acetylacetonato group.Type: GrantFiled: December 9, 2010Date of Patent: October 21, 2014Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Takaaki Manabe, Iwao Yamaguchi, Toshiya Kumagai, Mitsugu Sohma, Wakichi Kondou, Kenichi Tsukada
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Patent number: 8716189Abstract: A method of producing a superconductive material involves the step (1) of applying a solution of an organic compound of metals, oxides of the metals forming a superconductive material, onto a support body to be subsequently dried, a provisional baking step (2) of causing organic components of the organic compound of the metals to undergo thermal decomposition, and a main baking process step (3) of causing transformation of the oxides of the metals into the superconductive material, thereby producing an epitaxially-grown superconductive coating material, wherein at the time of irradiation of a surface of the support body coated with the solution of the organic compound of the metals for forming the superconductive material, and/or of a surface of the support body, opposite to the surface coated with the solution of the organic compound of the metals, with the laser light, during a period between the steps (1) and (2).Type: GrantFiled: February 5, 2008Date of Patent: May 6, 2014Assignees: National Institute of Advanced Industrial Science and Technology, The Japan Steel Works, Ltd.Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
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Publication number: 20140087951Abstract: An oxide superconducting thin film includes a substrate, and an intermediate layer and a superconducting layer provided in this order on the substrate. The intermediate layer has an average thickness of from 10 nm to 20 nm and a surface roughness Ra of 0.5 nm or less. The superconducting layer is formed on a surface of the intermediate layer and includes an oxide superconductor as a main component. A superconducting fault current limiter including the oxide superconducting thin film is also provided.Type: ApplicationFiled: May 31, 2012Publication date: March 27, 2014Applicants: National Institute of Advanced Industrial Science and Technology, FURUKAWA ELECTRIC CO., LTD.Inventors: Hajime Kasahara, Norio Matsui, Masakazu Matsui, Naoto Edo, Kengo Nakao, Toshiya Kumagai, Takaaki Manabe, Mitsugu Sohma
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Publication number: 20140080714Abstract: An oxide superconducting thin film includes a substrate having a single crystal structure, the main face of the substrate and a crystal face of the single crystal structure having an angle therebetween; an intermediate layer formed on the main face of the substrate and having an axis oriented in a direction perpendicular to the crystal face; and a superconducting layer formed on the intermediate layer and containing, as a main component, an oxide superconductor having a c-axis oriented in a direction perpendicular to the surface of the intermediate layer. A superconducting fault current limiter and a method of manufacturing an oxide superconducting thin film are also provided.Type: ApplicationFiled: May 30, 2012Publication date: March 20, 2014Applicants: National Institute of Advance Industrial Science and Technology, FURUKAWA ELECTRIC CO., LTD.Inventors: Kengo Nakao, Hajime Kasahara, Masakazu Matsui, Norio Matsui, Naoto Edo, Toshiya Kumagai, Takaaki Manabe, Mitsugu Sohma
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Publication number: 20120270738Abstract: Provided is a coating solution where, upon producing a rare-earth superconductive composite metal oxide film by means of a coating-pyrolysis method, cracks are not generated in the heat treatment process for eliminating organic components, even when the thickness of the rare-earth superconductive film produced in a single coating is 500 nm or more, and without having to repeat the coating and annealing process. A solution for producing a rare-earth superconductive film which is made into a homogeneous solution by dissolving, in a solvent formed by adding a polyhydric alcohol to a univalent linear alcohol having a carbon number of 1 to 8 and/or water, a metal complex coordinated, relative to metal ions of a metallic species containing rare-earth elements, barium and copper, with pyridine and/or at least one type of tertiary amine, at least one type of carboxylic acid having a carbon number of 1 to 8, and, as needed, an acetylacetonato group.Type: ApplicationFiled: December 9, 2010Publication date: October 25, 2012Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Takaaki Manabe, Iwao Yamaguchi, Toshiya Kumagai, Mitsugu Sohma, Wakichi Kondou, Kenichi Tsukada
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Publication number: 20120196150Abstract: Provided is a resistor film comprising vanadium oxide as a main component, wherein metal-to-insulator transition is indicated in the vicinity of room temperature in temperature variations of electric resistance, there is no hysteresis in a resistance change in response to temperature variations or the temperature width is small at less than 1.5K even if there is hysteresis, and highly accurate measurement can be provided when used in a bolometer. Upon producing the resistor film comprising vanadium oxide as a main component by treating a coating film of an organovanadium compound via laser irradiation or the like, a crystalline phase and a noncrystalline (amorphous) phase are caused to coexist in the resistor film.Type: ApplicationFiled: September 1, 2010Publication date: August 2, 2012Applicant: National Institute of Advance Industrial Science and TechnologyInventors: Tetsuo Tsuchiya, Masami Nishikawa, Tomohiko Nakajima, Toshiya Kumagai, Takaaki Manabe
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Publication number: 20100276593Abstract: An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.Type: ApplicationFiled: July 7, 2010Publication date: November 4, 2010Applicants: NEC Corporation, National Institute of Advanced Industrial Science and TechnologyInventors: Tetsuo TSUCHIYA, Susumu MIZUTA, Yuriko MIZUTA, Toshiya KUMAGAI, Toshihito SASAKI, Seiji KURASHINA
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Patent number: 7781030Abstract: An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.Type: GrantFiled: February 27, 2007Date of Patent: August 24, 2010Assignees: National Institute of Advanced Industrial Science and Technology, NEC CorporationInventors: Tetsuo Tsuchiya, Susumu Mizuta, Yuriko Mizuta, legal representative, Toshiya Kumagai, Toshihito Sasaki, Seiji Kurashina
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Patent number: 7771531Abstract: Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.Type: GrantFiled: August 9, 2007Date of Patent: August 10, 2010Assignee: National Institute of Advanced Industrial Science and TechnologyInventors: Tetsuo Tsuchiya, Tomohiko Nakajima, Akio Watanabe, Toshiya Kumagai
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Publication number: 20090318296Abstract: The invention provides a method of efficiently producing a superconductive material more excellent in properties without the occurrence of ablation and so forth, and large in area when executing thermal decomposition of an organic compound of metals, and formation of a superconductive material with heat treatment.Type: ApplicationFiled: February 5, 2008Publication date: December 24, 2009Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
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Publication number: 20090156411Abstract: There is provided a method of efficiently producing a superconductive material more excellent in properties, and large in area when executing thermal decomposition of a metalorganic compound, and formation of a superconductive material with heat treatment.Type: ApplicationFiled: July 31, 2007Publication date: June 18, 2009Inventors: Mitsugu Sohma, Tetsuo Tsuchiya, Toshiya Kumagai, Kenichi Tsukada, Kunihiko Koyanagi, Takashi Ebisawa, Hidehiko Ohtu
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Publication number: 20080044590Abstract: Provided is a manufacturing method of a high-performance phosphor thin film material that enables a crystallized pervoskite-related Ti, Zr oxide thin film to be formed on a glass or a silicon substrate. This manufacturing method of a phosphor thin film includes a step of forming an organic metal thin film or a metal oxide film obtained by adding at least one element selected from a group comprised of Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu to a metal oxide represented with a composition formula of ABO3, A2BO4, A3B2O7 (provided that there may be a deficiency at the A, B, O sites) wherein A is an element selected from Ca, Sr and Ba, and B is a metal element selected from Ti and Zr on a substrate, and a step of irradiating an ultraviolet lamp to the substrate at room temperature and thereafter irradiating an ultraviolet laser thereto while retaining the substrate at a temperature of 400° C. or less. The film is subject to oxidation treatment after being crystallized.Type: ApplicationFiled: August 15, 2007Publication date: February 21, 2008Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Tetsuo Tsuchiya, Tomohiko Nakajima, Toshiya Kumagai
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Publication number: 20080035898Abstract: Provided is a manufacturing method of a crystallized rare-earth thin films on a glass or a silicon substrate. This manufacturing method of a crystallized metal oxide thin film includes a step of retaining an metal organic thin film or a metal oxide film containing at least one type of rare-earth metal element selected from a group comprised of Y, Dy, Sm, Gd, Ho, Eu, Tm, Tb, Er, Ce, Pr, Yb, La, Nd and Lu formed on a substrate at a temperature of 250 to 600° C., and a step of crystallizing the organic metal thin film or the metal oxide film while irradiating ultraviolet radiation having a wavelength of 200 nm or less.Type: ApplicationFiled: August 9, 2007Publication date: February 14, 2008Applicant: National Institute of Advanced Industrial Science and TechnologyInventors: Tetsuo Tsuchiya, Tomohiko Nakajima, Akio Watanabe, Toshiya Kumagai
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Publication number: 20070272863Abstract: An infrared sensor manufacturing method according to this invention includes a step of forming a bridge structure of an insulating material on an Si substrate, a step of forming a vanadium oxide thin film on the bridge structure by a dry film forming method, a step of irradiating laser light onto the vanadium oxide thin film to thereby change material properties thereof, a step of forming the vanadium oxide thin film with the changed material properties into a bolometer resistor having a predetermined pattern, and a step of forming a protective layer of an insulating material so as to cover the bolometer resistor having the predetermined pattern and the bridge structure.Type: ApplicationFiled: February 27, 2007Publication date: November 29, 2007Applicants: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIECE AND TECHNOLOGY, NEC CORPORATIONInventors: Tetsuo Tsuchiya, Susumu Mizuta, Yuriko Mizuta, Toshiya Kumagai, Toshihito Sasaki, Seiji Kurashina