Abstract: Provided is an automobile door (600) including: a first impact absorbing member (122) that traverses the automobile door (600) so as to extend between both end portion regions in a vehicle height direction; a second impact absorbing member (124) that traverses the automobile door (600) so as to extend between both end portion regions in a vehicle length direction; an exterior material (110); and a belt line reinforcement (300), in which bending rigidity in a vehicle width direction of a cross section perpendicular to an extending direction of the belt line reinforcement (300) at a support portion is larger than bending rigidity in the vehicle width direction of a cross section perpendicular to an extending direction of the first impact absorbing member (122) at an intersection portion.

Abstract: What is provided is an automobile side structure including: a first impact absorbing member (122) extending in a vehicle height direction inside an automobile door; a second impact absorbing member (126) inside the automobile door; a door inner panel (200) inside the automobile door; and a side sill (520), in which the first impact absorbing member (122), the second impact absorbing member (126), the door inner panel (200), and the side sill (520) are on a straight line in a vehicle width direction, and the second impact absorbing member (126) is disposed between the first impact absorbing member (122) and the door inner panel (200); and an automobile.

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

Abstract: A method of manufacturing a press-formed product includes: capturing the sheet thickness of a sheet B; and using a die 6, a punch 7, and a movable mold part capable of moving relative to both the die 6 and punch 7 to press-form the sheet B into a press-formed product. During press-forming, the initial position of the movable mold part relative to the die 6 or punch 7 is controlled depending on the sheet thickness of the sheet B.

Abstract: An elevator door panel including a front plate, a thermal insulation member, a fixing member, and a longitudinal reinforcement plate, wherein four bent parts are formed by bending upper and lower ends and both side ends of the front plate into a U shape toward the back surface, the longitudinal reinforcement plate is connected to the bent parts by two brim parts on the back surface of the front plate while forming a space between the back surface and the longitudinal reinforcement plate, and the thermal insulation member is provided in the space formed between the longitudinal reinforcement plate and the back surface and fixed by the fixing member.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: The present invention provides a shock-absorbing member including: an exterior material 110 for an automobile; a first reinforcing member 122 that is disposed adjacent to the exterior material 110 and whose cross section orthogonal to the extending direction has a height, in the direction orthogonal to the exterior material 110, that is greater than the width in the S direction along the exterior material 110; a second reinforcing member 124 that is disposed adjacent to the exterior material 110 and whose cross section orthogonal to the extending direction has a height, in the direction orthogonal to the exterior material 110, that is greater than the width in the direction along the exterior material 110; an intersecting part where the first reinforcing member 122 and the second reinforcing member intersect and overlap; and a joint that joins the first reinforcing member 122 and the second reinforcing member 124 at the intersection.

Abstract: Methods for selectively depositing oxide thin films on a dielectric surface of a substrate relative to a metal surface are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a first precursor comprising oxygen and a species to be included in the oxide, such as a metal or silicon, and a second plasma reactant. In some embodiments the second plasma reactant comprises a plasma formed in a reactant gas that does not comprise oxygen. In some embodiments the second plasma reactant comprises plasma generated in a gas comprising hydrogen.

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Abstract: A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

Abstract: [Object] To make it possible to make impact absorption at the time of a collision even when there is no sufficient space. [Solution] An impact absorption member according to the present invention includes: a member that is placed adjacent to an exterior material 110 of an automobile and in which a height in a direction orthogonal to the exterior material is larger than a width in a direction along the exterior material in a cross section orthogonal to an extending direction of the member. By this configuration, a first member 122 and a second member 124 are arranged so as to extend in different directions and be adjacent to the exterior material 110 of an automobile, and therefore impact absorption at the time of a collision can be made even when there is no sufficient space.

Abstract: Methods of forming silicon nitride thin films on a substrate in a reaction space under high pressure are provided. The methods can include a plurality of plasma enhanced atomic layer deposition (PEALD) cycles, where at least one PEALD deposition cycle comprises contacting the substrate with a nitrogen plasma at a process pressure of 20 Torr to 500 Torr within the reaction space. In some embodiments the silicon precursor is a silyly halide, such as H2SiI2. In some embodiments the processes allow for the deposition of silicon nitride films having improved properties on three dimensional structures. For example, such silicon nitride films can have a ratio of wet etch rates on the top surfaces to the sidewall of about 1:1 in dilute HF.

Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.

Abstract: A method of producing a hot press-formed product, in which a die includes a hard layer having a skewness (Rsk), as measured in a direction from the outside of a die hole toward the inside of the die hole, of from ?5.0 to 1.2, and a hardness Hv_Die of from HV 1,000 to 1,550, over the entirety of a region of a steel sheet contact surface that is adjacent to a die shoulder portion. The steel sheet contact surface is a surface located outside of the die hole and configured to contact a plated steel sheet (a plated steel sheet including at least one kind of plating layer selected from the group consisting of a hot-dip galvanizing layer and a zinc nickel plating layer) that is to be subjected to hot press forming.

Abstract: Ultra-thin dielectric printed circuit boards (PCBs) are provided. An ultra-thin dielectric layer may be coupled to a first conductive layer on a first side of the ultra-thin dielectric layer. A second conductive layer may be coupled to a second side of the ultra-thin dielectric layer, and the ultra-thin dielectric layer is thinner than at least one of the first conductive layer and the second conductive layer. The second conductive layer may be patterned to form electrical paths. The patterned second conductive layer may be filled with a dielectric filler. One or more conductive layers and one or more ultra-thin dielectric layers may also be coupled to the second conductive layer.

Abstract: A method for manufacturing a quenched molding according to the present disclosure is a method including a first heat treatment process of heating a blanked steel material to a temperature higher than its Ac3 transformation point to perform austenite transformation, and then cooling to induce martensite transformation or bainite transformation, and a second heat treatment process of heating the steel material that has undergone the first heat treatment process to a temperature higher than the Ac3 transformation point to perform austenite transformation, and then cooling to induce martensite transformation. After the steel material has been heated to a temperature higher than the Ac3 transformation point in at least one process from out of the first heat treatment process or the second heat treatment process, molding is completed at a temperature higher than an Ar3 transformation point.

Abstract: A method of post-deposition treatment for silicon oxide film includes: providing in a reaction space a substrate having a recess pattern on which a silicon oxide film is deposited; supplying a reforming gas for reforming the silicon oxide film to the reaction space in the absence of a film-forming precursor, said reforming gas being composed primarily of He and/or H2; and irradiating the reforming gas with microwaves in the reaction space having a pressure of 200 Pa or less to generate a direct microwave plasma to which the substrate is exposed, thereby reforming the silicon oxide film.

Abstract: A method of producing a hot press-formed product, in which a die includes a hard layer having a skewness (Rsk), as measured in a direction from the outside of a die hole toward an inside of the die hole, of from ?5.0 to 1.2, and a hardness Hv_Die of from HV 1,000 to 1,800, over the entirety of a region of a steel sheet contact surface that is adjacent to a die shoulder portion. The steel sheet contact surface is a surface located outside of the die hole and configured to contact a hot-dip galvannealed steel sheet that is to be subjected to hot press forming.