Abstract: A power module includes at least one semiconductor switching element and at least one output terminal. At the output terminal, a voltage changes as a result of switching of connection relation with a power supply line in accordance with on and off of the semiconductor switching element. A self-generating power supply circuit includes an input node connected to the output terminal with a first capacitor being interposed, a diode connected in a predetermined connection direction between the input node and an output node, a second capacitor connected between the output node and a reference node, and a resistor connected between the input node and a ground line. The second capacitor holds a voltage across the reference node and the output node, in polarity in accordance with the connection direction of the diode.

Abstract: A semiconductor device includes: a semiconductor module including a switching device, a first wiring connected to the switching device, a second wiring positioned adjacent to the first wiring and generating induced electromotive force according to a change in an electric current flowing in the first wiring, and a sealing material sealing the switching device, the first wiring and the second wiring, wherein both of one end and the other end of the second wiring are exposed from the sealing material; a substrate including a GND electrode connected to the one end and on which the semiconductor module is mounted; and a diode rectifying the induced electromotive force output from the other end.

Abstract: An object of the present disclosure is to accurately simulate the operation of a CSTBT. The simulation model of a CSTBT includes a MOSFET, a diode whose cathode is connected to the drain of the MOSFET, capacitance CGE connected between a source and a gate of the MOSFET, capacitance CCG connected between a gate of the MOSFET and an anode of the diode, capacitance CCE connected between a source of the MOSFET and the anode of the diode, capacitance CDG connected between the drain and the gate of the MOSFET, and a behavioral power source VDG connected in series to the capacitance CDG between the drain and the gate of the MOSFET. The behavioral power source VDG performs a switching operation when gate-emitter voltage VGE of the CSTBT reaches a predetermined threshold value.

Abstract: A semiconductor module includes a photocoupler, a gate driving IC, and a switching element, and at least one of a first structure and a second structure, wherein the first structure is a structure where in a part of a surface of a first lead frame joined to a bottom surface electrode of a light-emitting element, a first conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-emitting element, and the first conductive layer are electrically connected by a wire, and the second structure is a structure where in a part of a surface of a second lead frame joined to a bottom surface electrode of a light-receiving element, a second conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-receiving element, and the second conductive layer are electrically connected by a wire.

Abstract: A semiconductor module includes a photocoupler, a gate driving IC, and a switching element, and at least one of a first structure and a second structure, wherein the first structure is a structure where in a part of a surface of a first lead frame joined to a bottom surface electrode of a light-emitting element, a first conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-emitting element, and the first conductive layer are electrically connected by a wire, and the second structure is a structure where in a part of a surface of a second lead frame joined to a bottom surface electrode of a light-receiving element, a second conductive layer is disposed with an insulating layer interposed, and a top surface electrode of the light-receiving element, and the second conductive layer are electrically connected by a wire.

Abstract: A semiconductor device includes a plurality of semiconductor elements including a power semiconductor element, a lead frame including one main surface on which the plurality of semiconductor elements are mounted, a resin that seals the plurality of semiconductor elements and a part of the lead frame where the plurality of semiconductor elements are mounted, and at least one shield member disposed above the plurality of semiconductor elements on a side of the one main surface of the lead frame. The shield member is held by the resin, and the shield member has a higher magnetic permeability or a higher electrical conductivity than the resin.

Abstract: A semiconductor device includes a plurality of semiconductor elements including a power semiconductor element, a lead frame including one main surface on which the plurality of semiconductor elements are mounted, a resin that seals the plurality of semiconductor elements arid a part of the lead frame where the plurality of semiconductor elements are mounted, and at least one shield member disposed above the plurality of semiconductor elements on a side of the one main surface of the lead frame. The shield member is held by the resin, and the shield member has a higher magnetic permeability or a higher electrical conductivity than the resin.