Patents by Inventor Toshiyo Ito

Toshiyo Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4766086
    Abstract: In a method of manufacturing a semiconductor device according to the present invention, a given position of a thermal oxide film formed on a monocrystalline silicon layer is opened to expose a surface of the monocrystalline silicon layer to serve as a getter site, a polycrystalline silicon layer is deposited on the thermal oxide film and the surface of the monocrystalline silicon layer, and the polycrystalline silicon layer is oxidized to convert the surface of the monocrystalline silicon layer directly contacting the polycrystalline silicon layer into an oxide film by thermal oxidation. That is, the position of interface between the oxide film and the monocrystalline silicon layer is shifted into the original monocrystalline silicon layer. During thermal oxidation of the polycrystalline silicon layer, a plurality of crystal defects to serve as getter sites are generated deeper than those generated by a conventional implagetter method in the monocrystalline silicon layer.
    Type: Grant
    Filed: March 2, 1987
    Date of Patent: August 23, 1988
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Jiro Ohshima, Shin-ichi Taka, Toshiyo Ito, Masaharu Aoyama
  • Patent number: 4543707
    Abstract: A process of manufacturing a semiconductor device by which a through hole such as contact hole with an obtuse opening edge can be formed in an insulation or passivation layer. At least two silicon oxynitride layers in which the nitrogen to oxygen ratio differs from each other are formed on a semiconductor substrate. The etching rate of the top layer is greater than that of the second layer from the top. The stacked silicon oxynitride layers are then selectively etched to form a through hole with an obtuse opening edge.
    Type: Grant
    Filed: June 29, 1984
    Date of Patent: October 1, 1985
    Assignee: Kabushiki Kaisha
    Inventors: Toshiyo Ito, Jiro Ohshima