Abstract: A water leakage position estimation system(S) configured to estimate a water leakage position in a pipe network including a plurality of pipe routes includes a water leakage determination unit (11) and an estimation unit (12e). The water leakage determination unit (11) determines whether a water leakage occurs in the pipe network based on a measured value of a vibration related to the pipe network that is acquired by a water leakage sensor (2) provided in the pipe network. The estimation unit (12e) estimates, when the water leakage determination unit (11) determines that a water leakage occurs in the pipe network, a pipe route in which the water leakage occurs from the plurality of pipe routes based on the measured value and a predicted value of the vibration for each pipe route acquirable by the water leakage sensor (2) when a water leakage occurs in each pipe route.

Abstract: One preferred aspect of the invention is a quantum computer of a semiconductor, including: a semiconductor crystalline substrate; a gate electrode array structure formed on a surface of the semiconductor crystalline substrate; and a reservoir unit that is a carrier supply unit, in which a classic potential barrier is formed in the semiconductor crystalline substrate by controlling an applied voltage to the gate electrode array structure, and a charge supplied from the reservoir unit is transported into the classic potential barrier.

Abstract: A water leakage position estimation system (S) configured to estimate a water leakage position in a pipe network including a plurality of pipe routes includes a water leakage determination unit (11) estimation unit (12e) . The water leakage determination unit (11) determines whether a water leakage occurs in the pipe network based on a measured value of a vibration related to the pipe network that is acquired by a water leakage sensor (2) provided in the pipe network. The estimation unit (12e) estimates, when the water leakage determination unit (11) determines that a water leakage occurs in the pipe network, a pipe route in which the water leakage occurs from the plurality of pipe routes based on the measured value and a predicted value of the vibration for each pipe route acquirable by the water leakage sensor (2) when a water leakage occurs in each pipe route.

Abstract: A semiconductor device includes an active region famed in a semiconductor layer formed on an insulating film famed in a semiconductor substrate and having a first extension portion extending in a first direction and a second extension portion extending in a second direction intersecting with the first direction, a first diffusion layer electrode of a first conductivity type provided in the first extension portion, second and third diffusion layer electrodes of a second conductivity type provided in the second extension portion so as to interpose a first connecting portion connecting the first extension portion and the second extension portion, a first gate electrode famed on the first extension portion between the first diffusion layer electrode and the first connecting portion through an insulating film famed on the semiconductor layer, and a second gate electrode famed on the first connecting portion through the insulating film famed on the semiconductor layer.

Abstract: A water leak sensing system includes: a plurality of sensor terminals including a sensor installed in a pipeline of a water supply network; and a computer that senses a water leak from the pipeline based on detection signal data of the plurality of sensors of the plurality of sensor terminals, and outputs a result. The pipeline is either a first pipeline not covered by a pipe covering member (PE sleeve) or a second pipeline covered by the pipe covering member. The sensor can detect a signal at a first distance from a water leak point when the water leak occurs in the first pipeline, and detect a signal at a second distance, longer than the first distance, from the water leak point when the water leak occurs in the second pipeline.

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points.

Abstract: A water leak sensing system includes: a plurality of sensor terminals including a sensor installed in a pipeline of a water supply network; and a computer that senses a water leak from the pipeline based on detection signal data of the plurality of sensors of the plurality of sensor terminals, and outputs a result. The pipeline is either a first pipeline not covered by a pipe covering member (PE sleeve) or a second pipeline covered by the pipe covering member. The sensor can detect a signal at a first distance from a water leak point when the water leak occurs in the first pipeline, and detect a signal at a second distance, longer than the first distance, from the water leak point when the water leak occurs in the second pipeline.

Abstract: A redeposited material is removed so as to electrically observe a microelement without causing foreign matters or metal contamination. An FIB device (charged particle beam device) includes an FIB barrel which discharges the focused ion beam (charged particle beam), a stage which holds a sample (substrate), a microcurrent measuring device (current measuring unit) which measures a leakage current from the sample, and a timer (time measuring unit) which measures a time to emit the focused ion beam and a time to measure the leakage current. Further, the FIB device includes a system control unit (control unit) which synchronizes a time to emit the focused ion beam and a time to measure the leakage current by the microcurrent measuring device.

Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

Abstract: The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points.

Abstract: The present invention is directed to a technique for correcting processing positional deviation and processing size deviation during processing by a focused ion beam device. A focused ion beam device control method includes forming a first processed figure on the surface of a specimen through the application of a focused ion beam in a first processing range of vision; determining the position of a next, second processing range of vision based on the outer dimension of the first processed figure; and moving a stage to the position of the second processing range of vision thus determined. Further, the control method includes forming a second processed figure through the application of the focused ion beam in a second processing range of vision.

Abstract: In a non-volatile memory in which writing/erasing is performed by changing a total charge amount by injecting electrons and holes into a silicon nitride film serving as a charge accumulation layer, in order to realize a high efficiency of a hole injection from a gate electrode, the gate electrode of a memory cell comprises a laminated structure made of a plurality of polysilicon films with different impurity concentrations, for example, a two-layered structure comprising a p-type polysilicon film with a low impurity concentration and a p?-type polysilicon film with a high impurity concentration deposited thereon.

Abstract: Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor material having a larger band gap than silicon is used, and which is typified by, for example, an SiC power MOSFET. In order to achieve this object, in the in the SiC power MOSFET, the gate electrode GE is formed in contact with the gate insulating film GOX, and is formed of the polycrystalline silicon film PF1 having the thickness equal to or smaller than 200 nm, and the polycrystalline silicon film PF2 formed in contact with the polycrystalline silicon film PF1, and having any thickness.

Abstract: Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor material having a larger band gap than silicon is used, and which is typified by, for example, an SiC power MOSFET. In order to achieve this object, in the in the SiC power MOSFET, the gate electrode GE is formed in contact with the gate insulating film GOX, and is formed of the polycrystalline silicon film PF1 having the thickness equal to or smaller than 200 nm, and the polycrystalline silicon film PF2 formed in contact with the polycrystalline silicon film PF1, and having any thickness.

Abstract: The present invention is to cause high channel mobility and a high threshold voltage to coexist in a SiC-MOSFET power device which uses a SiC substrate. The SiC MOSFET which is provided with a layered insulation film having electric charge trap characteristics on a gate insulation film has an irregular threshold voltage in a channel length direction of the SiC MOSFET, and in particular, has a shorter area having a maximum threshold voltage in the channel length direction compared to an area having other threshold voltages.

Abstract: In a non-volatile memory in which writing/erasing is performed by changing a total charge amount by injecting electrons and holes into a silicon nitride film serving as a charge accumulation layer, in order to realize a high efficiency of a hole injection from a gate electrode, the gate electrode of a memory cell comprises a laminated structure made of a plurality of polysilicon films with different impurity concentrations, for example, a two-layered structure comprising a p-type polysilicon film with a low impurity concentration and a p?-type polysilicon film with a high impurity concentration deposited thereon.

Abstract: In a SiC-MOSFET power device for which a SiC substrate is used, a laminated insulating film having a charge-trapping characteristic is employed as a gate insulating film of the SiC-DiMOSFET, and charges are injected into the laminated insulating film, thereby suppressing a change in the gate threshold voltage.

Abstract: The present invention is to cause high channel mobility and a high threshold voltage to coexist in a SiC-MOSFET power device which uses a SiC substrate. The SiC MOSFET which is provided with a layered insulation film having electric charge trap characteristics on a gate insulation film has an irregular threshold voltage in a channel length direction of the SiC MOSFET, and in particular, has a shorter area having a maximum threshold voltage in the channel length direction compared to an area having other threshold voltages.

Abstract: In order to provide a method for producing a SiC-MOSFET capable of increasing Vth without deteriorating channel mobility, before forming a gate insulation film, (a) silicon carbide substrate is oxidized by a low temperature oxidation method represented by plasma oxidation to form a silicon oxide film. Next, (b) the silicon oxide film is removed. After repeating the processes (a) and (b) once or more, (c) the gate insulation film is formed.