Abstract: A ranking system includes a selection section that selects a reference for ranking a plurality of routes, a ranking section that ranks the plurality of routes based on the selected reference, and an output section that outputs a result of the ranking or the ranked routes.

Abstract: A satellite signal reception device includes: a local signal generator that generates a signal while switching between a signal having a first local frequency corresponding to a first positioning satellite signal and a signal having a second local frequency corresponding to a second positioning satellite signal based on a reference clock signal; and a frequency converter that converts a reception signal of the first positioning satellite signal into a first intermediate frequency signal by multiplying the reception signal of the first positioning satellite signal by the signal having the first local frequency, and converts a reception signal of the second positioning satellite signal into a second intermediate frequency signal of which at least a part of a converted frequency band is in common with the first intermediate frequency signal multiplying the reception signal of the second positioning satellite signal by the signal having the second local frequency.

Abstract: A satellite signal reception device includes: a local signal generator that generates a signal while switching between a signal having a first local frequency corresponding to a first positioning satellite signal and a signal having a second local frequency corresponding to a second positioning satellite signal based on a reference clock signal; and a frequency converter that converts a reception signal of the first positioning satellite signal into a first intermediate frequency signal by multiplying the reception signal of the first positioning satellite signal by the signal having the first local frequency, and converts a reception signal of the second positioning satellite signal into a second intermediate frequency signal of which at least a part of a converted frequency band is in common with the first intermediate frequency signal multiplying the reception signal of the second positioning satellite signal by the signal having the second local frequency.

Abstract: A transconductance adjustment circuit includes a reference signal generation circuit that outputs a first signal and a second signal that is different by 90 degrees in phase from the first signal, a replica circuit to which the first signal and the second signal are input and which generates a first output signal and a second output signal, and an adjustment signal generation circuit that outputs a transconductance adjustment signal with respect to the adjustment-targeted circuit and the replica circuit. The reference signal generation circuit generates the first signal and the second signal that change in voltage at between a first voltage level and a second voltage level, based on a clock signal, and outputs the generated first and second signals with respect to the replica circuit.

Abstract: A circuit device includes a communication circuit that includes at least one of a reception circuit and a transmission circuit, and an adjustment signal generating circuit that outputs an adjustment signal which adjusts a transconductance of an adjustment target circuit included in the communication circuit. The adjustment signal generating circuit performs a generation process of the adjustment signal, accumulates charge corresponding to the generated adjustment signal in a capacitor, and outputs the adjustment signal based on the charge accumulated in the capacitor to the adjustment target circuit.

Abstract: A transconductance adjustment circuit includes a reference signal generation circuit that outputs a first signal and a second signal that is different by 90 degrees in phase from the first signal, a replica circuit to which the first signal and the second signal are input and which generates a first output signal and a second output signal, and an adjustment signal generation circuit that outputs a transconductance adjustment signal with respect to the adjustment-targeted circuit and the replica circuit. The reference signal generation circuit generates the first signal and the second signal that change in voltage at between a first voltage level and a second voltage level, based on a clock signal, and outputs the generated first and second signals with respect to the replica circuit.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: A microcode-controlled video display controller achieves special functions such as enlargement, reduction, and rotation by performing various transformations on the display screen coordinates in order to generate addresses for accessing a display memory containing image formation data. The transformed addresses are used to fetch display data and information in an order other than the order in which the data and information were originally stored in the display memory.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during same patterning process.

Abstract: An active matrix panel including a matrix of driving electrodes couples through thin film transistor switches to a corresponding source line and gate line and at least one of a driver circuit including complementary thin film transistors for driving the source and/or gate lines of the picture elements on the substrate. The thin film transistors of the active matrix have the same cross-sectional structure as the P-type or the N-type thin film transistors forming the driver circuit and are formed during the same patterning process.