Abstract: A copper plating apparatus according to an embodiment includes a plating tank configured to have a copper member and a plating member being disposed in an interior of the plating tank, a blocking film configured to partition the interior of the plating tank into an anode chamber where the copper member is to be disposed and a cathode chamber where the plating member is to be disposed, the blocking film being configured to transmit copper ions and not transmit an additive agent, a supply unit configured to supply the additive agent to the anode chamber, and a power supply configured to apply a voltage between the copper member and the plating member.

Abstract: Provided is a case hardening steel which allows effective inhibition of abnormal grain growth during carburizing treatment or the like and makes it possible to solve the problem of abnormal grain growth-induced reduction in characteristics. In the case hardening steel, a total amount of TiC, ZrC and AlN which are precipitate particles contained in 100 g of a steel material after subjecting the case hardening steel to hot rolling is 3.5×10?4 mole or less.

Abstract: The present invention relates to a mechanical part, which is obtained by: processing a steel into a shape of a part, the steel having an alloy composition containing, by weight percent, C: 0.10 to 0.30%, Si: 0.50 to 3.00%, Mn: 0.30 to 3.00%, P: 0.030% or less, S: 0.030% or less, Cu: 0.01 to 1.00%, Ni: 0.01 to 3.00%, Cr: 0.20 to 1.00%, Al: 0.20% or less, N: 0.05% or less, and the remainder of Fe and inevitable impurities, and the alloy composition satisfying the following condition: [Si %]+[Ni %]+[Cu %]?[Cr %]>0.50, in which [Si %], [Ni %], [Cu %] and [Cr %] represent the concentration of Si, the concentration of Ni, the concentration of Cu and the concentration of Cr in the alloy composition, respectively; subjecting the steel to a carburizing treatment in a vacuum, followed by gradually cooling the steel; and subsequently subjecting the steel to a high-frequency hardening to thereby harden a surface of the steel.

Abstract: A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process.

Abstract: An interference checking device includes a contour shape analyzing unit that extracts a contour shape of a tool cross section and a tool length by analyzing a two-dimensional image of a rotating tool, a rotation center analyzing unit that obtains a rotation center of the rotating tool by analyzing the contour shape, a three-dimensional-rotation-shape generating unit that generates a three-dimensional shape of the rotating tool on the basis of the contour shape, the tool length, and the rotation center, and an interference check processing unit that checks whether the rotating tool and a component other than the rotating tool interfere with each other when numerical control machining is performed on a workpiece by using the rotating tool, by using the three-dimensional shape, in which the three-dimensional-rotation-shape generating unit generates the three-dimensional shape by using a left-side contour shape.

Abstract: A method for fabricating a semiconductor device according to an embodiment, includes forming a dielectric film above a substrate; forming an opening in the dielectric film; forming a high melting metal film on a side wall and a bottom surface of the opening; forming a seed film of copper (Cu) on the high melting metal film; performing nitriding process after the seed film is formed; and performing electroplating process, in which a Cu film is buried in the opening while energizing the seed film after performing nitriding process.

Abstract: Disclosed is a carburized machine part which is free from the problem of decreased strength at edge-shaped parts due to excess introduction of carbon. The machine part is produced by processing a case hardening steel of the alloy composition consisting essentially of, by weight %, C: 0.1-0.3%, Si: 0.5-3.0%, Mn: 0.3-3.0%, P: up to 0.03%, S: up to 0.03%, Cu: 0.01-1.00%, Ni: 0.01-3.00%, Cr: 0.3-1.0%, Al: up to 0.2% and N: up to 0.05% and the balance of Fe and inevitable impurities, and satisfying the following condition: [Si %]+[Ni %]+Cu %]?[Cr %]>0.5 and carburizing by vacuum carburization.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming a first copper film in a first recess and a second recess having a width narrower than the first recess formed in an insulating layer above a substrate while the substrate is heated to a reflow temperature at which copper flows. The method includes forming a second copper film having an impurity concentration higher than the first copper film above the first copper film with lower flowability than the forming the first copper film.

Abstract: With a mandrel inserted in a through hole formed in an extrusion die, a preform filled in the through hole is extruded into a filling space defined between an inner surface of the through hole and an outer surface of the mandrel by pressing the preform with a pressing punch. Consequently, a cylindrical extruded form in which a plurality of stress concentration portions extending along an extruding direction are formed so as to be spaced apart from each other in a circumferential direction is formed. Then, an external force is applied to the extruded form thus obtained to thereby divide the extruded form at the stress concentration portions into a plurality of permanent magnets.

Abstract: A method for manufacturing a carburized part that includes vacuum carburizing a steel under a reduced pressure of 2 kPa or less, so that a surface carbon concentration after slow cooling performed after carburizing falls in a range of 0.9 to 1.5%, performing the slow cooling by air cooling at such a cooling rate that causes pearlite transformation, to transform a surface structure into pearlite; and thereafter, performing induction hardening under such heating and cooling conditions that produce fine carbides in a range of up to 0.1 mm from a surface by finely dividing cementite in the pearlite structure, where the fine carbides contain 90% or more of carbides of 1 ?m or less.

Abstract: A method for fabricating an electronic component according to an Embodiment, includes a seed film forming process and an electro-plating process. In the seed film forming process, a seed film is formed above a substrate. In the electro-plating process, electro-plating is performed by soaking the seed film in a plating solution in a plating bath to which the plating solution being bubbled by a nitrogen gas is supplied, using the seed film as a cathode.

Abstract: This invention provides a process for producing a high-concentration carburized steel which can realize dispersion of a large amount of fine and spherical carbides without causing lowered service life of a furnace, deformed steel products, and lowered working efficiency. The production process comprises (i) a primary carburization step for carburizing a steel product having a predetermined composition at a primary carburization temperature (T1) (° C.) until the surface carbon concentration (C) reaches a predetermined carbon concentration, (ii) a cooling step of, after the completion of the primary carburization step, cooling the steel product at a cooling rate of not less than 1° C./min to Ar1 point or less, (iii) a secondary carburization initial step of raising the temperature of the steel product to a secondary carburization start temperature (T2s), which is at least 100° C.

Abstract: A method for manufacturing a carburized part that includes vacuum carburizing a steel under a reduced pressure of 2 kPa or less, so that a surface carbon concentration after slow cooling performed after carburizing falls in a range of 0.9 to 1.5%, performing the slow cooling by air cooling at such a cooling rate that causes pearlite transformation, to transform a surface structure into pearlite; and thereafter, performing induction hardening under such heating and cooling conditions that produce fine carbides in a range of up to 0.1 mm from a surface by finely dividing cementite in the pearlite structure, where the fine carbides contain 90% or more of carbides of 1 ?m or less.

Abstract: A semiconductor device, has a semiconductor substrate; a first insulating film which is disposed above the semiconductor substrate; a second insulating film which is disposed above the first insulating film; a wiring which is disposed in the first insulating film and has a plug connecting part; a plug which is disposed in the second insulating film and connected to the plug connecting part; a plurality of first dummy wirings which are disposed in a first area near the plug connecting part in the first insulating film; and a plurality of second dummy wirings which are disposed in a second area near the wiring excepting the plug connecting part in the first insulating film, and have at least either a width smaller than that of the first dummy wirings or a pattern coverage ratio larger than that of the first dummy wirings.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: The present invention relates to a mechanical part, which is obtained by: processing a steel into a shape of a part, the steel having an alloy composition containing, by weight percent, C: 0.10 to 0.30%, Si: 0.50 to 3.00%, Mn: 0.30 to 3.00%, P: 0.030% or less, S: 0.030% or less, Cu: 0.01 to 1.00%, Ni: 0.01 to 3.00%, Cr: 0.20 to 1.00%, Al: 0.20% or less, N: 0.05% or less, and the remainder of Fe and inevitable impurities, and the alloy composition satisfying the following condition: [Si %]+[Ni %]+[Cu %]?[Cr %]>0.50, in which [Si %], [Ni %], [Cu %] and [Cr %] represent the concentration of Si, the concentration of Ni, the concentration of Cu and the concentration of Cr in the alloy composition, respectively; subjecting the steel to a carburizing treatment in a vacuum, followed by gradually cooling the steel; and subsequently subjecting the steel to a high-frequency hardening to thereby harden a surface of the steel.

Abstract: A plating method and apparatus for a substrate fills a metal, e.g., copper, into a fine interconnection pattern formed in a semiconductor substrate. The apparatus has a substrate holding portion 36 horizontally holding and rotating a substrate with its surface to be plated facing upward. A seal material 90 contacts a peripheral edge portion of the surface, sealing the portion in a watertight manner. A cathode electrode 88 passes an electric current upon contact with the substrate. A cathode portion 38 rotates integrally with the substrate holding portion 36. An electrode arm portion 30 is above the cathode portion 38 and movable horizontally and vertically and has an anode 98 face-down. Plating liquid is poured into a space between the surface to be plated and the anode 98 brought close to the surface to be plated. Thus, plating treatment and treatments incidental thereto can be performed by a single unit.

Abstract: A payment apparatus according to the present invention comprises an input unit to enter transaction information containing a transaction amount, a storage device to store payment method information containing a usage restriction for each of the payment method, a payment method information extracting apparatus to extract payment method information from the storage device by using the transaction information received from the input unit and selects a payment method to execute the payment according to the payment method information extracted, and a payment execution module to execute, by using the transaction information received from the payment method information extracting apparatus, the payment according to the payment method selected

Abstract: An apparatus for managing a printed document includes a storage medium capable of reversibly storing and erasing information, a printing/erasure device for executing printing to the storage medium and erasing a printed record, a document management server for managing information and security of the information, a write device for adding information onto the storage medium, and a monitor device for monitoring takeout of a printed document. A storage medium ID for identifying an individual medium is imparted to each medium. When printing, write, etc, are performed to the storage medium, the document management server manages the storage medium ID and a security level of a printed document file. The monitor device gives a warning not to take out the printed document in accordance with the security level of the document when the storage medium of printed documents is to be taken out.