Patents by Inventor Toshiyuki Ogawa

Toshiyuki Ogawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250040029
    Abstract: A flexible wiring board includes a plurality of signal lines, a shielding layer disposed to overlap with the plurality of signal lines in a planar view, and an insulating member disposed on a side opposite to a side where the shielding layer for the plurality of signal lines is disposed. The shielding layer is provided with openings. The shielding layer includes a first region having an opening ratio higher than a predetermined value and a second region having an opening ratio lower than the opening ratio of the first region. The second region is disposed at a position where the second region overlaps with the insulating member and the plurality of signal lines in a planar view. A boundary between the first region and the second region is disposed via a space to the insulating member in a planar view.
    Type: Application
    Filed: July 23, 2024
    Publication date: January 30, 2025
    Inventors: HIROKI SAITO, YU OGAWA, TOSHIYUKI YOSHIDA, KEISUKE ABE
  • Publication number: 20240395844
    Abstract: A photoelectric conversion device in which first and second substrates are bonded to each other is provided. The first substrate includes a first semiconductor layer having light receiving elements. The second substrate includes a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements. The photoelectric conversion device includes an electrode pad for external connection, an opening extending to the electrode pad, and a conductive pattern located between the first and second semiconductor layers. The conductive pattern includes wiring members that are used to drive the photoelectric conversion device and dummy members that are not used to drive the photoelectric conversion device. The dummy members include a dummy member located on an outer side relative to the opening in a plan view relative to a boundary between the first and second substrates.
    Type: Application
    Filed: August 6, 2024
    Publication date: November 28, 2024
    Inventor: Toshiyuki Ogawa
  • Patent number: 12107110
    Abstract: A photoelectric conversion device in which first and second substrates are bonded to each other is provided. The first substrate includes a first semiconductor layer having light receiving elements. The second substrate includes a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements. The photoelectric conversion device includes an electrode pad for external connection, an opening extending to the electrode pad, and a conductive pattern located between the first and second semiconductor layers. The conductive pattern includes wiring members that are used to drive the photoelectric conversion device and dummy members that are not used to drive the photoelectric conversion device. The dummy members include a dummy member located on an outer side relative to the opening in a plan view relative to a boundary between the first and second substrates.
    Type: Grant
    Filed: January 13, 2022
    Date of Patent: October 1, 2024
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshiyuki Ogawa
  • Publication number: 20240215417
    Abstract: A light-emitting element includes a pixel, an emitter disposed in the pixel, and a light-shielding layer configured to shield light emitted by the emitter. The emitter includes a first light-emitting portion and a second light-emitting portion which emits light of an emission color of the first light-emitting portion, the light-shielding layer includes a first opening portion where light emitted by the first light-emitting portion transmits through, and a second opening portion where light emitted by the second light-emitting portion transmits through, and an opening area of the second opening portion is smaller than an opening area of the first opening portion.
    Type: Application
    Filed: December 13, 2023
    Publication date: June 27, 2024
    Inventor: TOSHIYUKI OGAWA
  • Patent number: 11990490
    Abstract: A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.
    Type: Grant
    Filed: April 5, 2021
    Date of Patent: May 21, 2024
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Tsutomu Tange, Toshiyuki Ogawa, Hideaki Ishino, Yusuke Onuki
  • Patent number: 11824075
    Abstract: A photoelectric conversion device has an isolation structure. First and second isolation portions are provided between first and second photoelectric conversion elements. The first isolation portion extends from a first plane of a semiconductor layer to a position corresponding to at least a quarter of a length from the first plane to a second plane of the semiconductor layer. The second isolation portion extends from the second plane of the semiconductor layer to a position corresponding to at least a quarter of the length from the first plane to the second plane.
    Type: Grant
    Filed: July 6, 2021
    Date of Patent: November 21, 2023
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Toshiyuki Ogawa
  • Patent number: 11735613
    Abstract: A photoelectric conversion apparatus includes a semiconductor layer including a photoelectric conversion portion, a charge holding portion configured to hold electric charge generated from the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred. A gate electrode of a transistor and a light shielding film including a first portion covering the charge holding portion and a second portion covering an upper surface of the gate electrode are disposed above the semiconductor layer. The distance between the second portion of the light shielding film and the upper surface of the gate electrode is greater than the distance between the first portion of the light shielding film and the semiconductor layer.
    Type: Grant
    Filed: January 20, 2021
    Date of Patent: August 22, 2023
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiyuki Ogawa, Hajime Ikeda
  • Patent number: 11682686
    Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
    Type: Grant
    Filed: December 22, 2021
    Date of Patent: June 20, 2023
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiyuki Ogawa, Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Yukinobu Suzuki, Akihiro Kawano, Tsutomu Tange
  • Publication number: 20220238588
    Abstract: A photoelectric conversion device in which first and second substrates are bonded to each other is provided. The first substrate includes a first semiconductor layer having light receiving elements. The second substrate includes a second semiconductor layer having a circuit element for processing a signal generated by the light receiving elements. The photoelectric conversion device includes an electrode pad for external connection, an opening extending to the electrode pad, and a conductive pattern located between the first and second semiconductor layers. The conductive pattern includes wiring members that are used to drive the photoelectric conversion device and dummy members that are not used to drive the photoelectric conversion device. The dummy members include a dummy member located on an outer side relative to the opening in a plan view relative to a boundary between the first and second substrates.
    Type: Application
    Filed: January 13, 2022
    Publication date: July 28, 2022
    Inventor: Toshiyuki Ogawa
  • Patent number: 11355658
    Abstract: A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer including a first semiconductor region made of single crystal silicon with an oxygen concentration not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3, the silicon layer including a second semiconductor region made of single crystal silicon with an oxygen concentration lower than the oxygen concentration in the first semiconductor region; annealing the substrate in an atmosphere containing oxygen and setting the oxygen concentration in the second semiconductor region within the range not less than 2×1016 atoms/cm3 and not greater than 4×1017 atoms/cm3; and forming a photoelectric conversion element in the second semiconductor region after the annealing.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: June 7, 2022
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Toshihiro Shoyama, Hiroshi Takakusagi, Yasuo Yamazaki, Hideaki Ishino, Toshiyuki Ogawa
  • Patent number: 11342293
    Abstract: A semiconductor apparatus includes included first and second semiconductor components which are stacked on each other. The first component includes a first insulating layer and a first plurality of metal pads. The second component includes a second insulating layer and a second plurality of metal pads. Each of the first plurality of metal pads and each of the second plurality of metal pads are bonded to each other to form each of a plurality of bonding portions. First and second openings along an edge of the apparatus and passing through a bonding face between the first and second insulating layer are formed in the apparatus. A first bonding portion between the first opening and the second opening of the plurality of bonding portions is arranged in a distinctive location.
    Type: Grant
    Filed: September 30, 2020
    Date of Patent: May 24, 2022
    Assignee: Canon Kabushiki Kaisha
    Inventor: Toshiyuki Ogawa
  • Publication number: 20220115429
    Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
    Type: Application
    Filed: December 22, 2021
    Publication date: April 14, 2022
    Inventors: Toshiyuki Ogawa, Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Yukinobu Suzuki, Akihiro Kawano, Tsutomu Tange
  • Patent number: 11244978
    Abstract: Photoelectric conversion apparatus includes semiconductor layer in which first photoelectric converters are arranged in light-receiving region and second photoelectric converters are arranged in light-shielded region, light-shielding wall arranged above the semiconductor layer and defining apertures respectively corresponding to the first photoelectric converters, and light-shielding film arranged above the semiconductor layer. The light-shielding film includes first portion extending along principal surface of the semiconductor layer to cover the second photoelectric converters. The first portion has lower surface and upper surface. The light-shielding wall includes second portion whose distance from the semiconductor layer is larger than distance between the upper surface and the principal surface. Thickness of the first portion in direction perpendicular to the principal surface is larger than thickness of the second portion in direction parallel to the principal surface.
    Type: Grant
    Filed: October 14, 2019
    Date of Patent: February 8, 2022
    Assignee: Canon Kabushiki Kaisha
    Inventors: Toshiyuki Ogawa, Sho Suzuki, Takehito Okabe, Mitsuhiro Yomori, Yukinobu Suzuki, Akihiro Kawano, Tsutomu Tange
  • Patent number: 11211416
    Abstract: A photoelectric conversion apparatus includes a semiconductor layer having a front surface and a back surface and in which a plurality of photoelectric conversion portions is provided between the front surface and the back surface, a wiring structure arranged on the front surface side of the semiconductor layer, a separation portion arranged between the plurality of photoelectric conversion portions and formed by a trench continuing from the back surface, a first light shielding portion arranged above the semiconductor layer on the back surface side so as to overlap the separation portion, and a second light shielding portion arranged above the semiconductor layer on the back surface side so as to face the first light shielding portion via a region located above at least one photoelectric conversion portion among the plurality of photoelectric conversion portions.
    Type: Grant
    Filed: February 6, 2019
    Date of Patent: December 28, 2021
    Assignee: CANON KABUSHIKI KAISHA
    Inventors: Toshiyuki Ogawa, Nobuhiko Sato, Masaki Kurihara, Yoichi Wada
  • Publication number: 20210335864
    Abstract: A photoelectric conversion device has an isolation structure. First and second isolation portions are provided between first and second photoelectric conversion elements. The first isolation portion extends from a first plane of a semiconductor layer to a position corresponding to at least a quarter of a length from the first plane to a second plane of the semiconductor layer. The second isolation portion extends from the second plane of the semiconductor layer to a position corresponding to at least a quarter of the length from the first plane to the second plane.
    Type: Application
    Filed: July 6, 2021
    Publication date: October 28, 2021
    Inventor: Toshiyuki Ogawa
  • Publication number: 20210313369
    Abstract: A technique advantageous for improving an optical property of a photoelectric conversion apparatus is provided. The photoelectric conversion apparatus includes a photoelectric conversion layer and a light-shielding film that covers the photoelectric conversion layer, wherein the light-shielding film includes one metallic layer and another metallic layer located between the one metallic layer and the photoelectric conversion layer.
    Type: Application
    Filed: April 5, 2021
    Publication date: October 7, 2021
    Inventors: Tsutomu Tange, Toshiyuki Ogawa, Hideaki Ishino, Yusuke Onuki
  • Patent number: 11088191
    Abstract: A photoelectric conversion device has an isolation structure. First and second isolation portions are provided between first and second photoelectric conversion elements. The first isolation portion extends from a first plane of a semiconductor layer to a position corresponding to at least a quarter of a length from the first plane to a second plane of the semiconductor layer. The second isolation portion extends from the second plane of the semiconductor layer to a position corresponding to at least a quarter of the length from the first plane to the second plane.
    Type: Grant
    Filed: February 4, 2019
    Date of Patent: August 10, 2021
    Assignee: CANON KABUSHIKI KAISHA
    Inventor: Toshiyuki Ogawa
  • Publication number: 20210143198
    Abstract: A photoelectric conversion apparatus includes a semiconductor layer including a photoelectric conversion portion, a charge holding portion configured to hold electric charge generated from the photoelectric conversion portion, and a charge detection portion to which the electric charge held by the charge holding portion is transferred. A gate electrode of a transistor and a light shielding film including a first portion covering the charge holding portion and a second portion covering an upper surface of the gate electrode are disposed above the semiconductor layer. The distance between the second portion of the light shielding film and the upper surface of the gate electrode is greater than the distance between the first portion of the light shielding film and the semiconductor layer.
    Type: Application
    Filed: January 20, 2021
    Publication date: May 13, 2021
    Inventors: Toshiyuki Ogawa, Hajime Ikeda
  • Publication number: 20210104481
    Abstract: A semiconductor apparatus includes included first and second semiconductor components which are stacked on each other. The first component includes a first insulating layer and a first plurality of metal pads. The second component includes a second insulating layer and a second plurality of metal pads. Each of the first plurality of metal pads and each of the second plurality of metal pads are bonded to each other to form each of a plurality of bonding portions. First and second openings along an edge of the apparatus and passing through a bonding face between the first and second insulating layer are formed in the apparatus. A first bonding portion between the first opening and the second opening of the plurality of bonding portions is arranged in a distinctive location.
    Type: Application
    Filed: September 30, 2020
    Publication date: April 8, 2021
    Inventor: Toshiyuki Ogawa
  • Patent number: 10965170
    Abstract: According to one embodiment, an electronic apparatus includes a first transmitter configured to transmit a first wireless signal of power feeding, to a first terminal; a second transmitter configured to transmit a second wireless signal of power feeding, to the first terminal and controlling circuitry configured to control both the first transmitter and the second transmitter to transmit simultaneously at least a part of the first wireless signal from the first transmitter to the first terminal and the second wireless signal from the second transmitter to the first terminal.
    Type: Grant
    Filed: September 11, 2018
    Date of Patent: March 30, 2021
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Ryoko Matsuo, Kentaro Taniguchi, Toshiyuki Ogawa