Abstract: The purpose of the present invention is to provide a charged particle beam device that can specify irradiation conditions for primary charged particles that can obtain a desired charged state without adjusting the acceleration voltage. The charged particle beam device according to the present invention specifies the irradiation conditions for a charged particle beam in which the charged state of a sample is switched between a positive charge and a negative charge, and adjusts the irradiation conditions according to the relationship between the specified irradiation conditions and the irradiation conditions when an observation image of the sample has been acquired (see FIG. 8).

Abstract: A charged particle beam device for irradiating a sample arranged in a sample chamber to be observed with an electron beam includes: a plasma generation device to which a bias voltage is applicable to generate plasma containing charged particles for applying charges onto a side wall of a pattern of the sample; and a guide that guides the charged particles in the plasma generated by the plasma generation device to the pattern of the sample.

Abstract: A charged particle beam device includes: a plasma generation device attached to a sample chamber through a connecting member; a guide including a hollow portion configured to guide a plasma generated by the plasma generation device in a direction toward a stage; a first voltage source configured to apply a voltage to the stage; and a second voltage source configured to adjust the plasma generation device and the guide to a predetermined potential, in which the guide is disposed to avoid an opening of an objective lens through which a charged particle beam passes and to position a tip of the guide between the objective lens and the stage.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG. 5).

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Abstract: The objective of the present invention is to use brightness images acquired under different energy conditions to estimate the size of a defect in the depth direction in a simple manner. A charged-particle beam device according to the present invention determines the brightness ratio for each irradiation position on a brightness image while changing parameters varying the signal amount, estimates the position of the defect in the depth direction on the basis of the parameters at which the brightness ratio is at a minimum, and estimates the size of the defect in the depth direction on the basis of the magnitude of the brightness ratio (see FIG. 5).

Abstract: To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information in advance, an electron microscope detects, among emitted electrons generated by irradiating a sample with a primary electron beam, an emission angle in a predetermined range, the emission angle being formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons, and outputs a detection signal corresponding to the number of the emitted electrons detected. An emission angle distribution of a detection signal is obtained based on a plurality of detection signals, and an opening angle is obtained based on a change point of the emission angle distribution, the opening angle being based on an optical axis direction of the primary electron beam with respect to the bottom portion of the three-dimensional structure.

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: Provided is a scanning electron microscope. The scanning electron microscope is capable of removing a charge generated on a side wall of a deep hole or groove, and inspects and measures a bottom portion of the deep hole or groove with high accuracy.

Abstract: The present disclosure provides a pattern cross-sectional shape estimation system which includes a charged particle ray device which includes a scanning deflector that scans a charged particle beam, a detector that detects charged particles, and an angle discriminator that is disposed in a front stage of the detector and discriminates charged particles to be detected, and an arithmetic device that generates a luminance of an image, and calculates a signal waveform of a designated region on the image using the luminance. The arithmetic device generates angle discrimination images using signal electrons at different detection angles, and estimates a side wall shape of a measurement target pattern.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: The purpose of the present invention is to provide a charged particle ray device which is capable of simply estimating the cross-sectional shape of a pattern. The charged particle ray device according to the present invention acquires a detection signal for each different discrimination condition of an energy discriminator, and estimates the cross-sectional shape of a sample by comparing the detection signal for each discrimination condition with a reference pattern (see FIG. 5).

Abstract: A charged particle beam device includes an electron source which generates an electron beam, an objective lens which is applied with a coil current to converge the electron beam on a sample, a control unit which controls the current to be applied to the objective lens, a hysteresis characteristic storage unit which stores hysteresis characteristic information of the objective lens, a history information storage unit which stores history information related to the coil current, and an estimation unit which estimates a magnetic field generated by the objective lens on the basis of the coil current, the history information, and the hysteresis characteristic information.

Abstract: To measure a depth of a three-dimensional structure, for example, a hole or a groove, formed in a sample without preparing information for each pattern or calibration in advance. The invention provides an electron microscope including a detection unit that detects, among emitted electrons generated from a sample by irradiating the sample with a primary electron beam, emitted electrons of which an emission angle is in a predetermined range, the emission angle being an angle formed between an axial direction of the primary electron beam and an emission direction of the emitted electrons from the sample, and outputs a detection signal corresponding to the number of the emitted electrons which are detected.

Abstract: The scanning charged particle beam microscope according to the present application is characterized in that, in acquiring an image of the FOV (field of view), interspaced beam irradiation points are set, and then, a deflector is controlled so that a charged particle beam scan is performed faster when the charged particle beam irradiates a position on the sample between each of the irradiation points than when the charged particle beam irradiates a position on the sample corresponding to each of the irradiation points (a position on the sample corresponding to each pixel detecting a signal). This allows the effects from a micro-domain electrification occurring within the FOV to be mitigated or controlled.

Abstract: A charged particle beam apparatus with reduced frequency of lens resetting operations and thus with improved throughput. The apparatus includes an electron source configured to generate an electron beam, an objective lens to which coil current is adapted to be applied to converge the electron beam on a sample, a focal position adjustment device configured to adjust the focal position of the electron beam, a detector configured to detect electrons from the sample, a display unit configured to display an image of the sample in accordance with a signal from the detector, a storage unit configured to store information on the hysteresis characteristics of the objective lens, and an estimation unit configured to estimate a magnetic field generated by the objective lens on the basis of the coil current, the amount of adjustment of the focal position by the focal position adjustment device, and the information on the hysteresis characteristics.