Patents by Inventor Tricia L. Breen
Tricia L. Breen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7381585Abstract: The present invention describes organic solvent-soluble Diels-Alder adducts of polycyclic aromatic compounds, such as, oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacenes, with variety of dienophiles containing at least one heteroatom and in some cases two heteroatoms bonded to aromatic moiety, such as, thioxomalonates, azodicarboxylates, thialdehyde, acylnitroso and N-sulfinylamides. The Diels-Alder adducts are prepared by a simple, one step cycloaddition reaction of the polycyclic aromatic compounds, such as, pentacene, or other fused aromatic compounds, with heterodienophiles. The Diels-Alder adducts according to the present invention all form soluble adducts with pentacene and can be converted back to pentacene by retro-Diels-Alder reaction at moderate (60-250° C.) temperatures both in bulk, in solution or as thin-films.Type: GrantFiled: September 26, 2006Date of Patent: June 3, 2008Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Tricia L Breen, Christos D Dimitrakopoulos
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Patent number: 7125989Abstract: The present invention describes organic solvent-soluble Diels-Alder adducts of polycyclic aromatic compounds, such as, oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacenes, with variety of dienophiles containing at least one heteroatom and in some cases two heteroatoms bonded to aromatic moiety, such as, thioxomalonates, azodicarboxylates, thialdehyde, acylnitroso and N-sulfinylamides. The Diels-Alder adducts are prepared by a simple, one step cycloaddition reaction of the polycyclic aromatic compounds, such as, pentacene, or other fused aromatic compounds, with heterodienophiles. The Diels-Alder adducts according to the present invention all form soluble adducts with pentacene and can be converted back to pentacene by retro-Diels-Alder reaction at moderate (60–250° C.) temperatures both in bulk, in solution or as thin-films.Type: GrantFiled: November 20, 2002Date of Patent: October 24, 2006Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Tricia L Breen, Christos D Dimitrakopoulos
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Patent number: 6963080Abstract: The present invention describes thin film transistors in which the active channel layer is a thin film of a polycyclic aromatic compound, such as, pentacene, prepared by solution processing a soluble precursor of the polycyclic aromatic compound on a substrate followed by heating to a moderate temperature to convert the precursor back to the polycyclic aromatic compound. The soluble precursors of the polycyclic aromatic compounds are organic solvent-soluble Diels-Alder adducts of polycyclic aromatic compounds, such as, oligothiophene, perylene, benzo[ghi]perylene, coronene and a polyacene with a variety of dienophiles that contain at least one heteroatom. The Diels-Alder adducts can be converted back to pentacene by retro-Diels-Alder reaction at moderate (60-250° C.) temperatures both in bulk, in solution or as thin-films.Type: GrantFiled: November 20, 2002Date of Patent: November 8, 2005Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Tricia L Breen, Christos D Dimitrakopoulos
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Patent number: 6911354Abstract: A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.Type: GrantFiled: October 8, 2003Date of Patent: June 28, 2005Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Method of forming patterned nickel and doped nickel films via microcontact printing and uses thereof
Patent number: 6866791Abstract: The process of derivatization and patterning of surfaces, and more particularly to the formation of self-assembled molecular monolayers on metal oxide surfaces using microcontact printing and the derivative articles produced thereby.Type: GrantFiled: May 2, 2000Date of Patent: March 15, 2005Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Peter M. Fryer, Robert L. Wisnieff, John Christopher Flake -
Patent number: 6864504Abstract: A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistor is made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.Type: GrantFiled: June 3, 2003Date of Patent: March 8, 2005Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Publication number: 20040108569Abstract: A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.Type: ApplicationFiled: October 8, 2003Publication date: June 10, 2004Inventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Patent number: 6673287Abstract: A method of exposing a composite organic/inorganic master to alkylchlorosilanes in the vapor phase. Chlorosilanes participate in facile reactions with hydroxyl groups existing on the surface of inorganic oxides (such as glass or the native oxides on silicon, aluminum, tin, etc.); or those in organics-containing phenolic or alcoholic groups, such as photoresists. The alkyl group on the silane can be chosen from a large selection of aliphatic or aromatic organic groups that have substituents with varying polarity and reactivity.Type: GrantFiled: May 16, 2001Date of Patent: January 6, 2004Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Laura L. Kosbar, Michael P. Mastro, Ronald W. Nunes
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Patent number: 6664576Abstract: A method and structure of forming a vertical polymer transistor structure is disclosed having a first conductive layer, filler structures co-planar with the first conductive layer, a semiconductor body layer above the first conductive layer, a second conductive layer above the semiconductor body layer, and an etch stop strip positioned between a portion of the first conductive layer and the semiconductor body layer.Type: GrantFiled: September 25, 2002Date of Patent: December 16, 2003Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Publication number: 20030222312Abstract: A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistor is made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.Type: ApplicationFiled: June 3, 2003Publication date: December 4, 2003Inventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Patent number: 6620657Abstract: A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistors made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.Type: GrantFiled: January 15, 2002Date of Patent: September 16, 2003Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Publication number: 20030144562Abstract: The present invention describes organic solvent-soluble Diels-Alder adducts of polycyclic aromatic compounds, such as, oligothiophene, perylene, benzo[ghi]perylene, coronene and polyacenes, with variety of dienophiles containing at least one heteroatom and in some cases two heteroatoms bonded to aromatic moiety, such as, thioxomalonates, azodicarboxylates, thialdehyde, acylnitroso and N-sulfinylamides. The Diels-Alder adducts are prepared by a simple, one step cycloaddition reaction of the polycyclic aromatic compounds, such as, pentacene, or other fused aromatic compounds, with heterodienophiles. The Diels-Alder adducts according to the present invention all form soluble adducts with pentacene and can be converted back to pentacene by retro-Diels-Alder reaction at moderate (60-250° C.) temperatures both in bulk, in solution or as thin-films.Type: ApplicationFiled: November 20, 2002Publication date: July 31, 2003Applicant: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Tricia L. Breen, Christos D. Dimitrakopoulos
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Publication number: 20030136964Abstract: The present invention describes thin film transistors in which the active channel layer is a thin film of a polycyclic aromatic compound, such as, pentacene, prepared by solution processing a soluble precursor of the polycyclic aromatic compound on a substrate followed by heating to a moderate temperature to convert the precursor back to the polycyclic aromatic compound. The soluble precursors of the polycyclic aromatic compounds are organic solvent-soluble Diels-Alder adducts of polycyclic aromatic compounds, such as, oligothiophene, perylene, benzo[ghi]perylene, coronene and a polyacene with a variety of dienophiles that contain at least one heteroatom. The Diels-Alder adducts can be converted back to pentacene by retro-Diels-Alder reaction at moderate (60-250° C.) temperatures both in bulk, in solution or as thin-films.Type: ApplicationFiled: November 20, 2002Publication date: July 24, 2003Applicant: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Tricia L. Breen, Christos D. Dimitrakopoulos
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Publication number: 20030134487Abstract: A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistor is made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.Type: ApplicationFiled: January 15, 2002Publication date: July 17, 2003Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Tricia L. Breen, Lawrence A. Clevenger, Louis L. Hsu, Li-Kong Wang, Kwong Hon Wong
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Patent number: 6380101Abstract: Microcontact printing to pattern a self-assembled monolayer (SAM) of an alkanephosphonic acid on a film of indium zinc oxide (IZO). The SAM is robust enough to protect the undelying IZO from wet chemical etching, and thus defines a pattern of IZO on the substrate. In the microcontact printing process, a patterned, elastomeric stamp is inked with a solution of octadecylphosphonic acid and brought into conformal contact with the IZO surface. A SAM of alkanesulfonic acid forms where the stamp and the surface make contact; the rest remains underivatized. The stamp is then removed from the surface. Etching the sample in aqueous oxalic acid removes the unprotected areas, while the areas protected by the SAM remain in place.Type: GrantFiled: April 18, 2000Date of Patent: April 30, 2002Assignee: International Business Machines CorporationInventors: Tricia L. Breen, Peter M. Fryer, Ronald Wayne Nunes, Mary Elizabeth Rothwell