Patents by Inventor Tsai-Ming Huang
Tsai-Ming Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11937932Abstract: An acute kidney injury predicting system and a method thereof are proposed. A processor reads the data to be tested, the detection data, the machine learning algorithm and the risk probability comparison table from a main memory. The processor trains the detection data according to the machine learning algorithm to generate an acute kidney injury prediction model, and inputs the data to be tested into the acute kidney injury prediction model to generate an acute kidney injury characteristic risk probability and a data sequence table. The data sequence table lists the data to be tested in sequence according to a proportion of each of the data to be tested in the acute kidney injury characteristics. The processor selects one of the medical treatment data from the risk probability comparison table according to the acute kidney injury characteristic risk probability.Type: GrantFiled: July 8, 2022Date of Patent: March 26, 2024Assignees: TAICHUNG VETERANS GENERAL HOSPITAL, TUNGHAI UNIVERSITYInventors: Chieh-Liang Wu, Chun-Te Huang, Cheng-Hsu Chen, Tsai-Jung Wang, Kai-Chih Pai, Chun-Ming Lai, Min-Shian Wang, Ruey-Kai Sheu, Lun-Chi Chen, Yan-Nan Lin, Chien-Lun Liao, Ta-Chun Hung, Chien-Chung Huang, Chia-Tien Hsu, Shang-Feng Tsai
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Publication number: 20210327748Abstract: In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.Type: ApplicationFiled: June 28, 2021Publication date: October 21, 2021Inventors: Tsai-Ming HUANG, Wei-Chieh HUANG, Hsun-Chung KUANG, Yen-Chang CHU, Cheng-Che CHUNG, Chin-Wei LIANG, Ching-Sen KUO, Jieh-Jang CHEN, Feng-Jia SHIU, Sheng-Chau CHEN
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Patent number: 11049767Abstract: In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.Type: GrantFiled: September 26, 2019Date of Patent: June 29, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsai-Ming Huang, Wei-Chieh Huang, Hsun-Chung Kuang, Yen-Chang Chu, Cheng-Che Chung, Chin-Wei Liang, Ching-Sen Kuo, Jieh-Jang Chen, Feng-Jia Shiu, Sheng-Chau Chen
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Patent number: 10943783Abstract: In a method of manufacturing a semiconductor device, a first layer having an opening is formed over a substrate. A second layer is formed over the first layer and the substrate. A photo resist pattern is formed over the second layer above the opening of the first layer. The photo resist pattern is reflowed by a thermal process. An etch-back operation is performed to planarize the second layer.Type: GrantFiled: May 30, 2019Date of Patent: March 9, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Che Chung, Yi Jen Tsai, Ching-Sen Kuo, Tsai-Ming Huang, Jieh-Jang Chen, Feng-Jia Shiu
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Publication number: 20200135538Abstract: In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.Type: ApplicationFiled: September 26, 2019Publication date: April 30, 2020Inventors: Tsai-Ming HUANG, Wei-Chieh HUANG, Hsun-Chung KUANG, Yen-Chang CHU, Cheng-Che CHUNG, Chin-Wei LIANG, Ching-Sen KUO, Jieh-Jang CHEN, Feng-Jia SHIU, Sheng-Chau CHEN
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Publication number: 20200075318Abstract: In a method of manufacturing a semiconductor device, a first layer having an opening is formed over a substrate. A second layer is formed over the first layer and the substrate. A photo resist pattern is formed over the second layer above the opening of the first layer. The photo resist pattern is reflowed by a thermal process. An etch-back operation is performed to planarize the second layer.Type: ApplicationFiled: May 30, 2019Publication date: March 5, 2020Inventors: Cheng-Che CHUNG, Yi Jen TSAI, Ching-Sen KUO, Tsai-Ming HUANG, Jieh-Jang CHEN, Feng-Jia SHIU
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Patent number: 9213233Abstract: Provided is an integrated circuit (IC) photo mask. The IC photo mask includes a main feature of the IC, the main feature having a plurality of sides, and a plurality of assist features, the assist features being spaced from each other and spaced from the main feature, wherein each one of the assist features is adjacent to one of the sides, each one of the assist features has an elongated shape along a direction, whereby extending the shape in the direction would intersect at least another one of the assist features and the assist features are sub-resolution correction features for correcting for optical proximity effect in a photolithography process.Type: GrantFiled: July 12, 2013Date of Patent: December 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Cheng Chang, Wei-Kuan Yu, Yen-Hsu Chu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin
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Patent number: 9026956Abstract: Some embodiments of the present disclosure relate to a method to simulate patterning of a layout. The method comprises simulating formation of a layout pattern under a first lithography condition. The first lithography condition comprises a set of parameters, wherein a value of each parameter is defined by a corresponding process model. The method further comprises randomly varying the value of each parameter of the first lithography condition within a range of values defined by the corresponding process model of the parameter, to create a second lithography condition. Formation of a layout pattern is then re-simulated under the second lithography condition. Random variation of the value of each parameter is repeated to create additional lithography conditions. And, each lithography condition is re-simulated until the value of each parameter has been substantially varied across a range of its respective process model.Type: GrantFiled: October 11, 2013Date of Patent: May 5, 2015Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chia-Cheng Chang, Wei-Kuan Yu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Shih-Ming Chang
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Publication number: 20150106771Abstract: Some embodiments of the present disclosure relate to a method to simulate patterning of a layout. The method comprises simulating formation of a layout pattern under a first lithography condition. The first lithography condition comprises a set of parameters, wherein a value of each parameter is defined by a corresponding process model. The method further comprises randomly varying the value of each parameter of the first lithography condition within a range of values defined by the corresponding process model of the parameter, to create a second lithography condition. Formation of a layout pattern is then re-simulated under the second lithography condition. Random variation of the value of each parameter is repeated to create additional lithography conditions. And, each lithography condition is re-simulated until the value of each parameter has been substantially varied across a range of its respective process model.Type: ApplicationFiled: October 11, 2013Publication date: April 16, 2015Inventors: Chia-Cheng Chang, Wei-Kuan Yu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin, Shih-Ming Chang
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Publication number: 20150017571Abstract: Provided is an integrated circuit (IC) photo mask. The IC photo mask includes a main feature of the IC, the main feature having a plurality of sides, and a plurality of assist features, the assist features being spaced from each other and spaced from the main feature, wherein each one of the assist features is adjacent to one of the sides, each one of the assist features has an elongated shape along a direction, whereby extending the shape in the direction would intersect at least another one of the assist features and the assist features are sub-resolution correction features for correcting for optical proximity effect in a photolithography process.Type: ApplicationFiled: July 12, 2013Publication date: January 15, 2015Inventors: Chia-Cheng CHANG, Wei-Kuan Yu, Yen-Hsu Chu, Tsai-Ming Huang, Chin-Min Huang, Cherng-Shyan Tsay, Chien Wen Lai, Hua-Tai Lin