Abstract: A display apparatus includes a micro-light-emitting device comprising at least two device-side electrodes, a driving substrate comprising at least two driving substrate-side electrodes, and at least two metal layers, each metal layer being interposed between a corresponding device-side electrode and a corresponding driving substrate-side electrode, and connecting the corresponding device-side electrode to the corresponding driving substrate-side electrode. A distance between adjacent driving substrate-side electrodes, among the at least two driving substrate-side electrodes, is greater than a distance between adjacent device-side electrodes, among the at least two device-side electrodes, and each metal layer of the at least two metal layers is a metal formed by undergoing heating without pressure applied thereto and then curing during a process of connecting the at least two device-side electrodes to the at least two driving substrate-side electrodes.

Abstract: A method of manufacturing a display apparatus, a display apparatus, and a structure for manufacturing a display apparatus are provided. The method of manufacturing a display apparatus includes: forming a micro-light-emitting diode (LED) chip on a relay substrate such that a chip-side electrode is exposed; transferring the micro-LED chip from the relay substrate to a driving substrate including a driving substrate-side electrode; and bonding the chip-side electrode to the driving substrate-side electrode.

Abstract: A method of manufacturing a display apparatus, a display apparatus, and a structure for manufacturing a display apparatus are provided. The method of manufacturing a display apparatus includes: forming a micro-light-emitting diode (LED) chip on a relay substrate such that a chip-side electrode is exposed; transferring the micro-LED chip from the relay substrate to a driving substrate including a driving substrate-side electrode; and bonding the chip-side electrode to the driving substrate-side electrode.

Abstract: Provided are a light emitting diode capable of improving contrast, a method for manufacturing a light emitting diode, a light emitting diode display device, and a method for manufacturing a light emitting diode display device. The light emitting diode according to an embodiment comprises a package substrate having an electrode provided therein; a light emitting diode chip provided on the package substrate; a power line electrically connecting the light emitting diode chip to the electrode; and a black layer covering the electrode including a part connected to the power line.

Abstract: Provided are a light emitting diode capable of improving contrast, a method for manufacturing a light emitting diode, a light emitting diode display device, and a method for manufacturing a light emitting diode display device. The light emitting diode according to an embodiment comprises a package substrate having an electrode provided therein; a light emitting diode chip provided on the package substrate; a power line electrically connecting the light emitting diode chip to the electrode; and a black layer covering the electrode including a part connected to the power line.

Abstract: A light emitting device effectively utilizes the light emanating from a semiconductor luminous element, and can acquire clear and high-luminance light emission without a color dapple. The light emitting device is configured as follows. A transparent resin containing a wavelength converting material is provided on a reflecting surface of a base member such as a case, a board and a lead frame. The transparent semiconductor luminous element is bonded and fixed on the transparent resin. A wavelength of light emitted from a lower surface of the semiconductor luminous element is converted by the wavelength converting material, and the converted light is reflected on the reflecting surface. The reflected light is mixed with light emitted from an upper surface of the semiconductor luminous element, and the mixed light is radiated.

Abstract: The object of the invention is to provide light equipment which effectively utilizes the light emanating from a semiconductor luminous element and which can acquire clear and high-luminance light emission without a color dapple. The light equipment is configured as follows. Transparent resin in which wavelength converting material is mixed is provided on the reflecting surface of base material such as a case, a board and a lead frame, a transparent semiconductor luminous element is mounted, bonded and fixed on the transparent resin, the wavelength of light emitted from the back surface of the semiconductor luminous element is converted by the wavelength converting material, the converted light is reflected on the reflecting surface, the reflected light is mixed with light emitted from the surface of the semiconductor luminous element and the mixed light is radiated.