Patents by Inventor Tsubasa SHIONO

Tsubasa SHIONO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SiC EPITAXIAL WAFER
    Publication number: 20230026927
    Abstract: A SiC epitaxial wafer includes a SiC substrate and an epitaxial layer laminated on the SiC substrate, wherein the epitaxial layer comprises a first layer, a second layer and a third layer in order from the SiC substrate side, the nitrogen concentration of the SiC substrate is 6.0×1018 cm?3 or more and 1.5×1019 cm?3 or less, the nitrogen concentration of the first layer is 1.0×1017 cm?3 or more and 1.5×1018 cm?3 or less, the nitrogen concentration of the second layer is 1.0×1018 cm?3 or more and 5.0×1018 cm?3 or less, and the nitrogen concentration of the third layer is 5.0×1013 cm?3 or more and 1.0×1017 cm?3 or less.
    Type: Application
    Filed: July 12, 2022
    Publication date: January 26, 2023
    Applicant: SHOWA DENKO K.K.
    Inventors: Tsubasa SHIONO, Yuichiro MABUCHI