Patents by Inventor Tsung-Syun Huang
Tsung-Syun Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11508877Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.Type: GrantFiled: March 23, 2020Date of Patent: November 22, 2022Assignee: Genesis Photonics Inc.Inventors: Tung-Lin Chuang, Yi-Ru Huang, Yu-Chen Kuo, Chih-Ming Shen, Tsung-Syun Huang, Jing-En Huang
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Publication number: 20200357955Abstract: A red light emitting diode including an epitaxial stacked layer, a first and a second electrodes and a first and a second electrode pads is provided. The epitaxial stacked layer includes a first-type and a second-type semiconductor layers and a light emitting layer. A main light emitting wavelength of the light emitting layer falls in a red light range. The epitaxial stacked layer has a first side adjacent to the first semiconductor layer and a second side adjacent to the second semiconductor layer. The first and the second electrodes are respectively electrically connected to the first-type and the second-type semiconductor layers, and respectively located to the first and the second sides. The first and a second electrode pads are respectively disposed on the first and the second electrodes and respectively electrically connected to the first and the second electrodes. The first and the second electrode pads are located at the first side of the epitaxial stacked layer.Type: ApplicationFiled: March 23, 2020Publication date: November 12, 2020Applicant: Genesis Photonics Inc.Inventors: Tung-Lin Chuang, Yi-Ru Huang, Yu-Chen Kuo, Chih-Ming Shen, Tsung-Syun Huang, Jing-En Huang
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Patent number: 10784307Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: GrantFiled: September 9, 2019Date of Patent: September 22, 2020Assignee: GENESIS PHOTONICS INC.Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Publication number: 20200274027Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer.Type: ApplicationFiled: February 17, 2020Publication date: August 27, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Yu-Chen Kuo, Sheng-Tsung Hsu, Chih-Ming Shen, Yao-Tang Li, Tung-Lin Chuang, Tsung-Syun Huang, Jing-En Huang
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Publication number: 20200006419Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: ApplicationFiled: September 9, 2019Publication date: January 2, 2020Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Publication number: 20190312176Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.Type: ApplicationFiled: June 17, 2019Publication date: October 10, 2019Applicant: Genesis Photonics Inc.Inventors: Tsung-Syun Huang, Jing-En Huang, Yu-Chen Kuo, Yan-Ting Lan, Kai-Shun Kang, Fei-Lung Lu, Teng-Hsien Lai, Yi-Ru Huang
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Patent number: 10411065Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: GrantFiled: August 13, 2018Date of Patent: September 10, 2019Assignee: GENESIS PHOTONICS INC.Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Patent number: 10326047Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.Type: GrantFiled: September 2, 2016Date of Patent: June 18, 2019Assignee: Genesis Photonics Inc.Inventors: Tsung-Syun Huang, Jing-En Huang, Yu-Chen Kuo, Yan-Ting Lan, Kai-Shun Kang, Fei-Lung Lu, Teng-Hsien Lai, Yi-Ru Huang
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Publication number: 20180374892Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: ApplicationFiled: August 13, 2018Publication date: December 27, 2018Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Patent number: 10050081Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: GrantFiled: April 22, 2016Date of Patent: August 14, 2018Assignee: GENESIS PHOTONICS INC.Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Publication number: 20180182742Abstract: The disclosure relates to a high-voltage light-emitting diode (HV LED) and a manufacturing method thereof. A plurality of LED dies connected in series, in parallel, or in series and parallel are formed on a substrate. A side surface of the first semiconductor layer of part of the LED dies is aligned with a side surface of the substrate, such that no space for exposing the substrate is reserved between the LED dies and the edges of the substrate, the ratio of the substrate being covered by the LED dies is increased, that is, light-emitting area per unit area is increased, and the efficiency of light extraction of HV LED is improved.Type: ApplicationFiled: February 23, 2018Publication date: June 28, 2018Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Yi-Ru Huang, Chih-Ming Shen, Kuan-Chieh Huang, Jing-En Huang
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Publication number: 20180130926Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.Type: ApplicationFiled: October 6, 2017Publication date: May 10, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Sheng-Tsung Hsu, Yu-Chen Kuo, Chih-Ming Shen, Tung-Lin Chuang, Tsung-Syun Huang, Jing-En Huang
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Publication number: 20170062653Abstract: A light-emitting diode including a semiconductor epitaxial layer, a first electrode, and a second electrode is provided. The semiconductor epitaxial layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a quantum well layer. A recessed portion is formed in the semiconductor epitaxial layer. The recessed portion separates the second-type doped semiconductor layer, the quantum well layer, and a portion of the first-type doped semiconductor layer and defines a first region and a second region on the semiconductor epitaxial layer. The first electrode is located in the first region and electrically connected to at least a portion of the first-type doped semiconductor layer and at least a portion of the second-type doped semiconductor layer. The second electrode is located in the second region and electrically connected to the second-type doped semiconductor layer.Type: ApplicationFiled: September 2, 2016Publication date: March 2, 2017Applicant: Genesis Photonics Inc.Inventors: Tsung-Syun Huang, Jing-En Huang, Yu-Chen Kuo, Yan-Ting Lan, Kai-Shun Kang, Fei-Lung Lu, Teng-Hsien Lai, Yi-Ru Huang
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Publication number: 20160343910Abstract: A light-emitting device includes a substrate and a first light-emitting unit. The first light-emitting unit is disposed on the substrate, and includes a first semiconductor layer, a first light-emitting layer, and a second semiconductor layer. The first semiconductor layer is disposed on the substrate. The first light-emitting layer is disposed between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer is disposed on the first light-emitting layer. The first semiconductor layer has a first sidewall and a second sidewall. A first angle is between the substrate and the first sidewall. A second angle is between the substrate and the second sidewall. The first angle is smaller than the second angle.Type: ApplicationFiled: April 22, 2016Publication date: November 24, 2016Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Jing-En Huang, Shao-Ying Ting
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Publication number: 20160247788Abstract: The disclosure relates to a high-voltage light-emitting diode (HV LED) and a manufacturing method thereof. A plurality of LED dies connected in series, in parallel, or in series and parallel are formed on a substrate. A side surface of the first semiconductor layer of part of the LED dies is aligned with a side surface of the substrate, such that no space for exposing the substrate is reserved between the LED dies and the edges of the substrate, the ratio of the substrate being covered by the LED dies is increased, that is, light-emitting area per unit area is increased, and the efficiency of light extraction of HV LED is improved.Type: ApplicationFiled: February 17, 2016Publication date: August 25, 2016Inventors: Tsung-Syun Huang, Chih-Chung Kuo, Yi-Ru Huang, Chih-Ming Shen, Kuan-Chieh Huang, Jing-En Huang
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Publication number: 20160153909Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.Type: ApplicationFiled: February 5, 2016Publication date: June 2, 2016Inventors: Cheng-Pin Chen, Yun-Li Li, Shou-Wen Hsu, Chih-Hung Tseng, Pei-Yi Huang, Ching-Cheng Sun, Tsung-Syun Huang, Yung-Tsung Lin, Ping-Tsung Tsai
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Publication number: 20150036129Abstract: An inspection apparatus is capable for inspecting at least one light-emitting device. The inspection apparatus includes a working machine and an inspection light source. The inspection light source is disposed on the working machine and located above the light-emitting device. A dominant wavelength of the inspection light source is smaller than a dominant wavelength of the light-emitting device so as to excite the light-emitting device and get an optical property of the light-emitting device.Type: ApplicationFiled: June 23, 2014Publication date: February 5, 2015Inventors: Cheng-Pin Chen, Yun-Li Li, Shou-Wen Hsu, Chih-Hung Tseng, Pei-Yi Huang, Ching-Cheng Sun, Tsung-Syun Huang, Yung-Tsung Lin, Ping-Tsung Tsai