Abstract: An optical waveguide device includes a substrate; a lower cladding disposed on the substrate; a rib waveguide including a slab disposed on the lower cladding and a single rib disposed on the slab contiguous to the slab; and an upper cladding disposed on the rib waveguide. The rib waveguide includes a first doped region having a first electric conductivity exhibiting a P-type electric conductivity across the rib and the slab and a second doped region being contiguous to the first doped region and having a second electric conductivity exhibiting an N-type electric conductivity across the rib and the slab.

Abstract: An optical waveguide device includes a substrate; a lower cladding disposed on the substrate; a rib waveguide including a slab disposed on the lower cladding and a single rib disposed on the slab contiguous to the slab; and an upper cladding disposed on the rib waveguide. The rib waveguide includes a first doped region having a first electric conductivity exhibiting a P-type electric conductivity across the rib and the slab and a second doped region being contiguous to the first doped region and having a second electric conductivity exhibiting an N-type electric conductivity across the rib and the slab.

Abstract: An optical modulator and a method for manufacturing an optical modulator are provided.

Abstract: According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a depletion region comprising a junction between from a first conductivity type portion and a second conductivity type portion, a first intrinsic region, and a second intrinsic region, and wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region.

Abstract: An optical modulator and a method for manufacturing an optical modulator are provided.

Abstract: In an embodiment, a phase shifting device may be provided. The phase shifting device may include a supporting layer and a semiconducting layer disposed above the supporting layer. The semiconducting layer may include a first doped region doped with doping atoms of a first conductivity type and arranged on the supporting layer; and a second doped region doped with doping atoms of a second conductivity type being different from the first conductivity type; wherein the second doped region may be disposed over the first doped region such that a first doped regions junction may be formed in a direction substantially parallel to a surface of the supporting layer and a second doped regions junction may be formed in a direction substantially perpendicular to the surface of the supporting layer. A method of forming a phase shifting device and an electro-optic device may also be provided.

Abstract: According to embodiments of the present invention, an optical modulator is provided. The optical modulator includes a depletion region comprising a junction between from a first conductivity type portion and a second conductivity type portion, a first intrinsic region, and a second intrinsic region, and wherein the depletion region is disposed between the first intrinsic region and the second intrinsic region.