Abstract: An OH radical measurement device includes a contact unit configured to bring an OH radical detection probe into contact with a gas to be measured, the OH radical detection probe including an aromatic carboxylic acid or an aromatic carboxylic acid derivative, a polar aprotic organic solvent, and a polar protic organic solvent having a content higher than a content of the polar aprotic organic solvent.

Abstract: An OH radical measurement device includes a contact unit configured to bring an OH radical detection probe into contact with a gas to be measured, the OH radical detection probe including an aromatic carboxylic acid or an aromatic carboxylic acid derivative, a polar aprotic organic solvent, and a polar protic organic solvent having a content higher than a content of the polar aprotic organic solvent.

Abstract: A semiconductor memory device comprises a heater electrode, a phase change portion, a heat insulation portion and an upper electrode. The phase change portion comprises a concave portion and a contact portion. The concave portion is in contact with the heater electrode. The contact portion is formed integrally with the concave portion. The heat insulation portion is formed in the concave portion. The upper electrode is formed on the contact portion and the heat insulation portion so that the heat insulation portion is positioned between the concave portion and the upper electrode.

Abstract: A phase-change memory device has a different-material contact plug having a first electrically conductive material plug made of a first electrically conductive material, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being buried in a common contact hole. The different-material contact plug is effective for reducing the radiation of heat from a contact plug beneath a phase-change layer. The phase-change memory device also includes an extension electrode layer held in contact with a portion of the bottom surface of the phase-change layer in an area displaced off a position directly above a contact surface through which the phase-change layer and the heater electrode contact each other.

Abstract: The invention provides a novel structure of a phase change memory device. In the phase change memory device of the invention, an electrode acting as a radiating fin does not exit immediately above a phase change area of a phase change layer (115). A heater electrode (111) and landing electrode layer (113a, 114a) both contact the bottom of the phase change layer (115) made of GST. The landing electrode layer (113a, 114a) contacts the bottom of the phase change layer (115) to partially overlap in a region off from a portion immediately above the contact face (Y) of the phase change layer and heater electrode. The contact electrode (116, 118) is directly connected to the landing electrode layer (113a, 114a) in a portion off from a portion immediately above the heater electrode (111). The phase change layer of GST or the like does not exist immediately below the contact electrode.

Abstract: A semiconductor memory device comprises a heater electrode, a phase change portion, and an upper electrode. The phase change portion is connected to the heater electrode in a first direction. The upper electrode has an upper surface, a lower surface and a hole. The hole pierces the upper electrode between the upper and the lower surfaces in the first direction. The hole has an inner wall, which is connected to the phase change portion in a second direction perpendicular to the first direction.

Abstract: A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.

Abstract: A composite plug 104 is formed, and both a first plug (TiN) 106 and a second plug (W) 108 are disposed in one contact hole; the first plug (TiN) 106 functions as a heater electrode and the second plug (W) 108 functions as a contact plug. This eliminates the need to stack the heater electrode on the contact plug. The resistivities R11 and R12 of the first and second plugs of the composite plug 104 are in a relationship R11>R12.

Abstract: A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being stacked in one contact hole, the heater electrode and the second electrically conductive material plug being held in contact with each other in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.

Abstract: A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being held in contact with each other through at least respective side surfaces thereof, the heater electrode and the second electrically conductive material plug being not in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.

Abstract: A phase-change memory device according to the present invention includes a phase-change layer, a stacked heater electrode electrically connected to the phase-change layer, and a contact plug electrically connected to the stacked heater electrode. The stacked heater electrode includes at least a first electrode portion made of a first electrically conductive material and a second electrode portion provided in contact with the inner side of the first electrode portion. The second electrode portion is made of a second electrically conductive material having a resistivity lower than the resistivity of the first electrically conductive material.

Abstract: A phase change memory includes a sidewall insulation film and a heater electrode which are formed in a contact hole formed in an interlayer insulation film on a lower electrode. The heater electrode has a recessed structure. In a recessed area surrounded by the sidewall insulation film, the heater electrode and a phase change film are contacted with each other. A phase change region is formed only in an area contacted with the sidewall insulation film. The sidewall insulation film is an anti-oxidizing insulation film. The phase change region and the heater electrode which are heated to a high temperature upon rewriting are not contacted with the interlayer insulation film as an oxidizing insulation film.

Abstract: A semiconductor memory device comprises a heater electrode, a phase change portion, and an upper electrode. The phase change portion is connected to the heater electrode in a first direction. The upper electrode has an upper surface, a lower surface and a hole. The hole pierces the upper electrode between the upper and the lower surfaces in the first direction. The hole has an inner wall, which is connected to the phase change portion in a second direction perpendicular to the first direction.

Abstract: A phase-change memory device has a different-material contact plug having a first electrically conductive material plug made of a first electrically conductive material, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being buried in a common contact hole. The different-material contact plug is effective for reducing the radiation of heat from a contact plug beneath a phase-change layer. The phase-change memory device also includes an extension electrode layer held in contact with a portion of the bottom surface of the phase-change layer in an area displaced off a position directly above a contact surface through which the phase-change layer and the heater electrode contact each other.

Abstract: A semiconductor memory device comprises a heater electrode, a phase change portion, a heat insulation portion and an upper electrode. The phase change portion comprises a concave portion and a contact portion. The concave portion is in contact with the heater electrode. The contact portion is formed integrally with the concave portion. The heat insulation portion is formed in the concave portion. The upper electrode is formed on the contact portion and the heat insulation portion so that the heat insulation portion is positioned between the concave portion and the upper electrode.

Abstract: The present invention provides footwear capable of alleviating the effects of sweating feet.

Abstract: A composite plug 104 is formed, and both a first plug (TiN) 106 and a second plug (W) 108 are disposed in one contact hole; the first plug (TiN) 106 functions as a heater electrode and the second plug (W) 108 functions as a contact plug. This eliminates the need to stack the heater electrode on the contact plug. The resistivities R11 and R12 of the first and second plugs of the composite plug 104 are in a relationship R11>R12.

Abstract: A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being stacked in one contact hole, the heater electrode and the second electrically conductive material plug being held in contact with each other in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.

Abstract: A phase-change memory device has a phase-change layer, a heater electrode having an end held in contact with the phase-change layer, a contact plug of different kinds of material having a first electrically conductive material plug made of a first electrically conductive material and held in contact with the other end of the heater electrode, and a second electrically conductive material plug made of a second electrically conductive material having a specific resistance smaller than the first electrically conductive material, the first electrically conductive material plug and the second electrically conductive material plug being held in contact with each other through at least respective side surfaces thereof, the heater electrode and the second electrically conductive material plug being not in overlapping relation to each other, and an electrically conductive layer electrically connected to the second electrically conductive material plug.

Abstract: The invention provides a novel structure of a phase change memory device. In the phase change memory device of the invention, an electrode acting as a radiating fin does not exit immediately above a phase change area of a phase change layer (115). A heater electrode (111) and landing electrode layer (113a, 114a) both contact the bottom of the phase change layer (115) made of GST. The landing electrode layer (113a, 114a) contacts the bottom of the phase change layer (115) to partially overlap in a region off from a portion immediately above the contact face (Y) of the phase change layer and heater electrode. The contact electrode (116, 118) is directly connected to the landing electrode layer (113a, 114a) in a portion off from a portion immediately above the heater electrode (111). The phase change layer of GST or the like does not exist immediately below the contact electrode.