Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12.

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 ?m×3 ?m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 ?m?1 to 10 ?m?1 is not more than 50 nm4.

Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 ?m×1 ?m region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70?BA30)/(BD70?BD30)?60(%/nm) and maximum height (Rmax)?4.5 nm.

Abstract: Provided is a reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein the root mean square roughness (Rms), obtained by measuring a 3 ?m×3 ?m region on the surface of the reflective mask blank on which the mask blank multilayer film is formed with an atomic force microscope, is not more than 0.5 nm and the power spectrum density at a spatial frequency of 1 ?m?1 to 10 ?m?1 is not more than 50 nm4.

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10?2 ?m?1 to 1 ?m?1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 ?m?1, obtained by measuring a 1 ?m×1 ?m region on the main surface with an atomic force microscope, is not more than 10 nm4.

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10?2 ?m?1 to 1 ?m?1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 ?m?1, obtained by measuring a 1 ?m×1 ?m region on the main surface with an atomic force microscope, is not more than 10 nm4.

Abstract: To provide a reflective mask blank which may inhibit a variation in reflectance with respect to EUV light due to counter diffusion between a protective film and a material of an adjacent phase-shift film pattern caused by thermal diffusion even if the power of an exposure light source of an EUV exposure machine becomes high; a reflective mask manufactured therefrom; and a method for manufacturing a semiconductor device. The reflective mask blank comprises a multilayer reflective film 13, protective film 14, and phase-shift film 16 for shifting a phase of the EUV light, which are formed in said order on a substrate 12.

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70?BA30)/(BD70?BD30)?350 (%/nm), and has a maximum height (Rmax)?1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 ?m×1 ?m in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.

Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 ?m or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)?L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 ?m×1 ?m with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 ?m?1.

Abstract: Provided is a mask blank glass substrate that has high surface smoothness, that is formed with a fiducial mark capable of improving the detection accuracy of a defect position or the like, and that enables reuse or recycling of a glass substrate included therein. An underlayer is formed on a main surface, on the side where a transfer pattern is to be formed, of a glass substrate for a mask blank. The underlayer serves to reduce surface roughness of the main surface of the glass substrate or to reduce defects of the main surface of the glass substrate. A surface of the underlayer is a precision-polished surface. A fiducial mark which provides a reference for a defect position in defect information is formed on the underlayer.

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)?L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.

Abstract: Provided is a multilayer reflective film formed substrate formed with a fiducial mark for accurately managing coordinates of defects. A multilayer reflective film formed substrate is formed with a multilayer reflective film, which is adapted to reflect EUV light, on a substrate and a fiducial mark which serves as a reference for a defect position in defect information is formed on the multilayer reflective film. The fiducial mark includes a main mark for determining a reference point for the defect position and auxiliary marks arranged around the main mark. The main mark has a point-symmetrical shape and has a portion with a width of 200 nm or more and 10 ?m or less with respect to a scanning direction of an electron beam writing apparatus or defect inspection light.

Abstract: A reflective mask blank capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus. The reflective mask blank has a mask blank multilayer film comprising a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, and an absorber film on a main surface of a mask blank substrate, wherein, in the relationship between bearing area (%) and bearing depth (nm) as measured with an atomic force microscope for a 1 ?m×1 ?m region of the surface of the reflective mask blank on which the mask blank multilayer film is formed, the surface of the reflective mask blank satisfies the relationship of (BA70?BA30)/(BD70?BD30)?60(%/nm) and maximum height (Rmax)?4.5 nm.

Abstract: This invention provides a reflective mask blank capable of preventing peeling-off of a multilayer reflective film due to cleaning or the like in a mask manufacturing process or during mask use. The reflective mask blank includes a multilayer reflective film, a protective film, an absorber film, and a resist film formed in this order on a substrate. Assuming that a distance from the center of the substrate to an outer peripheral end of the multilayer reflective film is L(ML), that a distance from the center of the substrate to an outer peripheral end of the protective film is L(Cap), that a distance from the center of the substrate to an outer peripheral end of the absorber film is L(Abs), and that a distance from the center of the substrate to an outer peripheral end of the resist film is L(Res), L(Abs)>L(Res)>L(Cap)?L(ML) and the outer peripheral end of the resist film is located inward of an outer peripheral end of the substrate.