Abstract: A film forming apparatus includes: a chamber for holding a wafer; a susceptor on which the wafer is placed within the chamber; heaters which heat the wafer placed on the susceptor; and a shower plate disposed opposite to the susceptor to inject a film formation processing gas toward the wafer, a main body of the shower plate being made of aluminum or an aluminum alloy. With the apparatus, a film is deposited on the surface of the wafer, the film having a low thermal expansion coefficient, measured at the film deposition temperature, lower by at least about 5×10?6/° C. than a thermal expansion coefficient of the main body of the shower plate. The shower plate has an anodized film having a thickness of 10 ?m or thicker formed on the side of the main body facing the susceptor.

Abstract: A sinker electric discharge machining apparatus for machining a workpiece by generating electric discharge in a work gap by applying a voltage having an OFF time, may include a discriminator for generating a first signal representing an abnormal state of the work gap, and a second signal representing a normal state of the work gap; and a pulse controller, in which a first extension factor and a second extension factor that is smaller than the first extension factor are set and a first reduction factor and a second reduction factor that is smaller than the first reduction factor are set. The pulse controller extends the OFF time using either the first or the second extension factor if the first signal is received. The pulse controller reduces the OFF time using either the first or the second reduction factor if the second signal is received.

Abstract: Disclosed is a wireless communication apparatus for receiving a code-spread transmission signal. The wireless communication apparatus includes: an RF section; and a baseband section, wherein, in the baseband section, despreaders of an integral submultiple, which is 1/n1, of the number of chips of a spread code are arranged in parallel, and there is provided a propagation measurement section that measures a propagation channel by using the plurality of despreaders a plurality of times in a time-division manner and performing despread of each period corresponding to a chip rate of the spread code.

Abstract: Waves are amplified by a gradual decrease in depth, and when the waves reach a vertical wall 10 of a reef 2, breaking waves are generated by sudden decrease of the water depth. As the breaking waves rush into the upper portion of the reef 2 and pass through the slant slits 14, wave energy is absorbed by the reef 2 and the seat water returns back to the ocean through an opening 11. The sand brought into a reef 2 with the waves are washed away by the return flow 11 so that the sand is not deposited within the reef 2 and the space in the reef 2 is always clear. The return flow promotes generation of the breaking waves. The breaking waves are introduced into the slits, beach erosion is prevented, and a calm sea area utilized for marine leisure is created. The seawater in the reef, with sufficient air, flows to the sea area behind the breakwater through the paths 19.

Abstract: Disclosed is a wireless communication apparatus for receiving a code-spread transmission signal. The wireless communication apparatus includes: an RF section; and a baseband section, wherein, in the baseband section, despreaders of an integral submultiple, which is 1/n1, of the number of chips of a spread code are arranged in parallel, and there is provided a propagation measurement section that measures a propagation channel by using the plurality of despreaders a plurality of times in a time-division manner and performing despread of each period corresponding to a chip rate of the spread code.

Abstract: A hairstyle displaying system stores a hairstyle data for indicating a plurality of types of hairstyles, and a coloring data for indicating a plurality of types of hair colors, in a style content database. Individual data which constitutes the hairstyle data or the coloring data is managed with change-over-time data, which indicates the state of a change over time. Moreover, these data are also associated with predetermined feature parameters, which define the features of a head portion of a customer. For example, after hair treatments at a beauty shop, the hairstyle displaying system generates and displays a future image, which shows how the current hairstyle and hair color will change as time passes, with respect to the customer.

Abstract: Attribute data for indicating the attributes of a customer and feature parameters for indicating physical features are recorded in a customer chart. In a server, from among a plurality of hairstyle data and coloring data stored in a style content database in advance in association with the attribute data and the feature parameters, hairstyle data and coloring data which match the attribute data and the feature parameters of the customer recorded in the customer chart are searched for. At the same time, the image of the face portion of customer imaged in advance are combined with the searched hairstyle data and coloring data, to thereby generate the image of the customer. The generated image is suggested to the customer, as the image of the customer having a hairstyle that objectively suits the customer.

Abstract: A film-formation method for a semiconductor process includes pre-coating of covering a worktable with a pre-coat before loading a target substrate into a process chamber, and film formation thereafter of loading the target substrate into the process chamber, and forming a main film on the target substrate. The pre-coating repeats the first and second steps a plurality of times, thereby laminating segment films to form the pre-coat. The first step supplies first and second process gases into the process chamber, thereby forming a segment film containing a metal element on the worktable. The second step supplies the second process gas containing no metal element into the process chamber, thereby exhausting and removing, from the process chamber, a byproduct produced in the first step other than a component forming the segment film.

Abstract: An evaluation system for evaluating ability is provided. The system includes: a) storing part for storing a plurality of problem groups, which are rated as a plurality of ranks based on difficulty levels, with associated right answers therein; b) first presenting part for presenting two or more problems of the plurality of problem groups, which are rated as a first rank, in the storing part to a user; and c) determination part for receiving answers to said two or more problems presented, to determine whether or not said received answers are correct with reference to the right answers in the storing part, and to obtain a correct answer rate based on the determination result.

Abstract: In each embodiment of this invention, a pairing apparatus has a random pairing module which generates pairings from the first to (r1)-th rounds by the random system, and a modified Swiss pairing module which generates pairings from the (r1+1)-th to r-th rounds by the modified Swiss system. When first several matches are paired by the random system, win points are distributed to respective participating teams in accordance with their merits. For this reason, by subsequent pairings of the modified Swiss system, participating teams can be successively paired within a close merit range. Hence, the total win points (ranks) can reflect the merits. For this reason, the reverse phenomenon of merits and ranks can be suppressed without using the round-robin system.

Abstract: A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film on the poly-crystal silicon layer; and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

Abstract: A method of forming a gate electrode of a multi-layer structure includes a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of an oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

Abstract: A method of forming a gate electrode of a multi-layer structure comprises a step of supplying a processing gas for poly-crystal film formation and impurities of a P-type into a film formation device, to form a poly-crystal silicon layer doped with P-type impurities, on a surface of a gate film target, a step of maintaining the processing target in the film formation device to prevent formation of no oxide film might not be formed on the poly-crystal silicon layer, and a step of supplying a processing gas for tungsten silicide film formation and impurities of a P-type into the film formation device, to form a tungsten silicide layer doped with impurities of P-type impurities, on the poly-crystal silicon layer on which no oxide film is formed.

Abstract: Waves are amplified by the gradual decrease of the depth, and when the waves reach to a vertical wall 10 of a reef 2, the breaking waves are generated by sudden decrease of the water depth. As the breaking waves rush into the upper portion of the reef 2 and pass through the slant slits 14, and wave energy are absorbed by the reef 2 and the seat water returns back to the ocean through an opening 11. The sand brought into a reef 2 with the waves are washed away by the return flow 11 so that the sand is not deposited within the reef 2 and the space in the reef 2 is always clear.

Abstract: Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.

Abstract: Pre-coating films are formed in a pretreatment by supplying first film-forming gases into a process chamber of a process vessel while heating the process chamber so as to form a first pre-coating film on the inner surface of the process vessel exposed to the process chamber, followed by supplying second film-forming gases into the process chamber to form a second pre-coating film on the first pre-coating film. A semiconductor wafer is loaded into the process chamber. Then, the first gases are supplied into the process chamber while heating the process chamber so as to form a first layer on the wafer, followed by supplying the second gases into the process chamber so as to form a second layer on the first layer. A silane gas is supplied into the process chamber to permit silicon material to be deposited on the surface of the second layer stacked on the first layer. Finally, the wafer having the first and second multi-film is unloaded out of the process vessel.

Abstract: A heat treatment apparatus includes a treatment container having a reaction chamber, and a gas chamber a mount table provided in the treatment container for mounting thereon a wafer such that an upper surface of the wafer is exposed to the reaction chamber, and an annular clamp member provided in the reaction chamber, movable between a clamp position in which it contacts the peripheral edge of the wafer in circular line contact and a waiting position in which it is separated from the wafer. The line contact prevents leakage of the process gas from the reaction chamber through a clearance between the clamp member and the wafer.

Abstract: An operating system for managing a file system having a hierarchical structure stores a directory immediately before a file, when it is opened, to correspond with a file descriptor. When a task specifies the file descriptor, the directory stored to correspond with that file descriptor is presented to the task. The task reads stored information from the directory to detect the file name.

Abstract: A silicon oxide film to be used as an interlayer-insulating film in a semiconductor device is formed by a high pressure organic silane-O.sub.3 CVD. A semiconductor wafer is placed in a reaction vessel and is heated at a temperature of 350.degree. C. A mixture of an organic silane gas such as TEOS, HMDS and OMCTS and an ozone gas is introduced into the reaction vessel and the reaction is carried out at a pressure higher than the atmospheric pressure, preferably at a pressure of about 2 atm to form a silicon oxide film having excellent properties. A life time of the ozone gas which serves as an oxiding agent and/or catalyst can be prolonged under the high pressure, and therefore a deposition rate of the silicon oxide film ca be increased and the flatness of the silicon oxide film can be improved. Therefore, the silicon oxide film forming process can be performed efficiently and a flatening process after the formation of the silicon oxide film can be made simpler.

Abstract: A process for the production of a thermoplastic copolymer having excellent heat distortion resistance is disclosed. The process includes heat-treating a raw copolymer comprising a vinyl monomer unit including methacrylic and/or acrylic acid units in the presence of a specific ring-closing promoter selected from basic compounds, whereby the methacrylic and/or acrylic acid unit is converted into six-membered cyclic anhydride unit. The copolymer has excellent heat distortion resistance, transparency, mechanical properties and processability, and can produce a formed product without splash on the surface. The copolymer is useful for the production of various parts, such as automobile parts, electrical parts, industrial parts, and miscellaneous goods.