Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

Abstract: There is provided a plasma processing apparatus including a susceptor, having a substrate mounting portion for mounting thereon a substrate; a focus ring including an outer ring and an inner ring; a dielectric ring; a dielectric constant varying device for varying a dielectric constant of the dielectric ring; a grounding body positioned at an outside of the dielectric ring with a gap from a bottom surface of the focus ring; and a controller for controlling a top surface electric potential of the focus ring by controlling a current flowing from the susceptor to the substrate.

Abstract: There is provided a plasma processing apparatus including a susceptor 114, having a substrate mounting portion for mounting thereon a substrate, to which a high frequency power is applied; a focus ring 210, disposed to surround the substrate mounted on the substrate mounting portion, including an outer ring 214 having a top surface higher than a top surface of the substrate and an inner ring 212 extending inwardly from the outer ring so as to allow at least a part of the inner ring to be positioned below a periphery of the substrate, the outer ring and the inner ring being formed as a single member; a dielectric ring 220 positioned between the focus ring and the susceptor; a dielectric constant varying device 250 for varying a dielectric constant of the dielectric ring.

Abstract: A particle backflow preventing part, which is disposed inside of an evacuation pipe connecting a process chamber and an evacuation device, includes a first plate part, and a second plate part that has an opening and is spaced from the first plate part by a first gap and positioned closer to the evacuation device than the first plate part. The opening is covered by the first plate part in plan view.

Abstract: An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a thickness gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.

Abstract: An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a thickness gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.

Abstract: An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a thickness gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.

Abstract: An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer.

Abstract: There is provided a plasma processing apparatus including a susceptor 114, having a substrate mounting portion for mounting thereon a substrate, to which a high frequency power is applied; a focus ring 210, disposed to surround the substrate mounted on the substrate mounting portion, including an outer ring 214 having a top surface higher than a top surface of the substrate and an inner ring 212 extending inwardly from the outer ring so as to allow at least a part of the inner ring to be positioned below a periphery of the substrate, the outer ring and the inner ring being formed as a single member; a dielectric ring 220 positioned between the focus ring and the susceptor; a dielectric constant varying device 250 for varying a dielectric constant of the dielectric ring.

Abstract: An electrostatic chuck of a stack structure includes a metal layer interposed between insulating layers and a groove formed at a peripheral portion of the electrostatic chuck to have a width gradually increasing toward an outside, the groove being covered with a thermally sprayed insulating film. The thermally sprayed film covers at least a portion of the metal layer exposed at an inside of the groove such that the thermally sprayed film does not protrude from the groove.

Abstract: An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer.

Abstract: Maintenance work on an apparatus is facilitated, the maintenance cycle is extended and an improvement in throughput is achieved. A processing chamber 2 and an auxiliary vacuum chamber 3 are connected via a transfer port 20 formed through their wall surfaces. At the inner wall of the transfer port 20, a detachable gate liner 100 constituted of a plurality of members is installed. The maintenance work at the inner wall of the transfer port is facilitated since the gate liner 100 alone simply needs to be disengaged to be washed, replaced or the like. Insulating films 200 and 300 constituted of a rare earth oxide spray-deposit film with high plasma erosion resistance are used to coat the surface of the gate liner 100 and the surface of a gate valve 4 over the area covering the transfer port 20. As a result, damage attributable to plasma does not occur readily at these surfaces, and the extent of metal contamination and dust generation is lowered.

Abstract: The flow control valve (10) has a body (11) and a valve mechanism (40). The body defines a chamber (20). The chamber involves an inlet (12) for receiving fluid to control, a valve seat (16) for passing the fluid, and an outlet (15) for discharging the fluid. The valve mechanism consists of a valve plug (41) for opening and closing the valve seat, a first diaphragm (50) arranged in the vicinity of the inlet, and a second diaphragm (60) arranged in the vicinity of the outlet. Each of the diaphragms is in the chamber and has a periphery fixed to the body. The diaphragms divide the chamber into a first pressure chamber (21) outside the first diaphragm, a valve chamber (25) between the diaphragms, and a second pressure chamber (30) outside the second diaphragm. The valve chamber includes the inlet, valve seat, and outlet.