Abstract: An information processing method, an information processing system, and a recording medium are provided.

Abstract: Provided is a data analysis system, a data analysis device, a data analysis method, and a recording medium. The data analysis system includes: a first data conversion device configured to conceal first data on a first product manufactured in a first manufacturing system and output the first data as first concealed data; and a data analysis device configured to select an element of the first concealed data that affects second data on a second product manufactured using the first product by evaluating a degree of influence between the first concealed data and the second data.

Abstract: A dividing plate has insulating properties, and divides the inside of a processing vessel into a reaction chamber in which a body to be processed is placed, and a plasma generating chamber for generating plasma. Further, the dividing plate is provided, on a surface thereof on the side of the plasma generating chamber, with a first electrode, and a plurality of through holes for supplying active species included in the plasma generated in the plasma generating chamber to the reaction chamber. The second electrode is disposed facing the first electrode in the plasma generating chamber. When plasma is to be generated in the plasma generating chamber, an electric power supply unit supplies either the first electrode or the second electrode with high-frequency electric power in which high-frequency electric power in a plurality of frequencies is superimposed by phase control.

Abstract: In a hard mask formed on a target film formed on a substrate, a first film having a stress in a first direction and a second film having a stress in a second direction opposite to the first direction are alternately stacked one or more times.

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)?0.5.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: There is provided a plasma processing device.

Abstract: The storage is configured to store model data generated based on data including, in patterns, a processing condition for substrate processing, an attitude of a movable part that affects a processing result of the substrate processing, and the processing result of the substrate processing. The processing controller is configured to use the model data stored in the storage to control the substrate processing, including control of the processing condition for the substrate processing and control of the attitude of the movable part, according to a condition to be satisfied by the processing result of the substrate processing.

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)?0.5.

Abstract: A mechanism of predicting a change in process values with respect to a control target and using a prediction result is provided. A management apparatus includes a prediction model unit, with respect to which an input-output relationship between multivariate control values at a time T with respect to a control target and multivariate process values at a time T+?T with respect to the control target has been learned; and an optimization model unit configured to seek multivariate control values of the time T that minimize respective differences between the multivariate process values at the time T+?T output from the prediction model unit and corresponding target values, and control the control target using the multivariate control values of the time T that have been sought.

Abstract: A management system for managing a substrate manufacturing process includes agent units configured to monitor a state of a substrate processing device that performs the substrate manufacturing process and detect a predetermined event, and transmission paths configured to, when a predetermined event is detected in any one of the agent units, transmit and receive information between the agent units based on the detected event, wherein the one agent unit derives an instruction to the substrate processing device based on the information transmitted and received via the transmission paths so that an index value of the substrate manufacturing process is optimized.

Abstract: A data collection system includes: a first substrate processing apparatus having a first processing space, a second substrate processing apparatus having a second processing space, and a data collection apparatus connected to the first substrate processing apparatus and the second substrate processing apparatus. The data collection apparatus is configured to compare observed data observed when substrates having the same or similar shapes are processed under the same processing conditions in the first processing space and the second processing space, respectively, and calculate a correction amount for correcting the observed data observed when being processed in the second processing space, and correct the observed data observed when being processed in the second processing space based on the correction amount, and collect corrected observed data, when searching for a processing condition by processing substrates while changing the processing condition in the second processing space.

Abstract: A plasma processing apparatus includes a processing vessel in which a substrate as a target of a plasma processing is disposed; a plasma forming device configured to form plasma within the processing vessel; a focusing device disposed within the processing vessel, and configured to focus multiple ions in the plasma to output an ion beam; and a sorting device configured to sort out, from the ion beam outputted from the focusing device, a specific ion to be supplied to the substrate.

Abstract: A contaminant detection system includes a light source configured to emit excitation light on an object to be inspected; a detector configured to detect fluorescence emitted from a contaminant adhering to the object to be inspected; and a processor. The fluorescence is caused by emission of the excitation light from the light source onto the object to be inspected. The processor is configured to perform a determination of a location of the contaminant and a type of the contaminant, based on the fluorescence emitted from the contaminant; and output a result of the determination.

Abstract: The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times.

Abstract: A film forming apparatus includes a vacuum-evacuable processing chamber, a lower electrode for mounting thereon a target substrate, an upper electrode disposed to face the lower electrode, a gas supply unit, a voltage application unit and a switching unit. The gas supply unit supplies a film forming source gas to be formed into plasma to a processing space between the upper and the lower electrode. The voltage application unit applies to the upper electrode a voltage outputted from at least one of a high frequency power supply and a DC power supply included therein. The switching unit selectively switches the voltage to be applied to the upper electrode among a high frequency voltage outputted from the high frequency power supply, a DC voltage outputted from the DC power supply, and a superimposed voltage in which the DC voltage is superimposed with the high frequency voltage.

Abstract: An electronic device includes a camera configured to capture an image and generate an electrical image signal by photoelectrically converting incident light, and at least one processor configured to estimate a light source color temperature based on image data of the image signal, identify a target coordinate on a color space based on the light source color temperature, identify a capture coordinate on the color space based on the image, identify a chrominance allowable range based on the target coordinate, obtain a white balance evaluation value based on a first distance between the target coordinate and the chrominance allowable range and a second distance between the capture coordinate and the chrominance allowable range, and perform a white balance correction on the image based on the white balance evaluation value.

Abstract: A plasma processing method according to an embodiment is performed in a state in which a substrate is placed on a support stage in an internal space of a chamber body. In the plasma processing method, a plasma treatment is performed on the substrate. Subsequently, a phase of a voltage of a lower electrode is relatively adjusted with respect to a phase of a voltage of an upper electrode by a phase adjustment circuit, such that a thickness of a sheath between the support stage and plasma without extinguishing the plasma generated in order to perform the plasma treatment. Thereafter, in a state in which supply of a high-frequency power is stopped, gases and particles in the internal space of the chamber body are discharged using an exhaust device.

Abstract: There is provided a plasma processing device.

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)?0.5.