Abstract: A plasma processing apparatus that can accurately detect the longevity of a chamber internal part to eliminate the waste of the replacement of the chamber internal part that has not reached its end of longevity and prevent the occurrence of troubles caused by continuously using the chamber internal part that has reached its end of longevity. In the chamber internal part, at least one longevity detecting elemental layer comprised of an element different from a constituent material of the chamber internal part is buried.

Abstract: A system for determining occurrence factors of particles includes a user interface device, and an apparatus for detecting the occurrence factors of particles. The apparatus for detecting the occurrence factors of particles includes a storage unit that stores a program for executing a calculation method for calculating a likelihood of each of the occurrence factors of particles in the form of a score; and a calculation unit for calculating the score for each of the occurrence factors of particles based on particle distributions at least on a surface of a substrate using the stored program. The user interface device displays the calculated score for each of the occurrence factors of particles.

Abstract: A member of a substrate processing apparatus, which can prevent minute particles from becoming attached to a wafer. The substrate processing apparatus has a chamber in which the wafer is accommodated, and the wafer is subjected to plasma processing in the chamber. The member is disposed in the chamber and comprised of a base material and an yttria coating that coats the base material. The yttria coating is comprised of an yttria base layer coated on the base material, and an yttria upper layer laminated on at least a part of the yttria base layer, and the structure of the yttria upper layer is looser than that of the yttria base layer.

Abstract: A substrate processing method that can prevent a decrease in the yield of semiconductor devices manufactured from substrates. A gas containing fluorine atoms is supplied into a chamber, and then chlorine gas is supplied into the chamber. Further, a gas containing nitrogen atoms is supplied into the chamber.

Abstract: A method for removing water molecules from a vacuum chamber for carrying out a process on a target object in vacuum includes the steps of introducing into the vacuum chamber a water molecule removal gas including at least a reduction gas which reduces the water molecules to produce hydrogen molecules and a halogen-based gas which reacts with the produced hydrogen molecules to produce acid, exhausting gases in the vacuum chamber measuring an amount of water molecules present inside the vacuum chamber, and determining whether or not the measured amount of water molecules is greater than or equal to a threshold value, wherein if the measured amount of water molecules is greater than or equal to the threshold value, the water molecule removal gas is introduced into the vacuum chamber in the introducing step.

Abstract: An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.

Abstract: There is provided a plasma processing apparatus including a plasma generating unit for generating a plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed. The plasma processing apparatus further includes a particle moving unit for electrostatically driving particles in a region above the substrate to be removed out of the region above the substrate in the processing chamber while the processing on the substrate is performed by using the plasma. In addition, there is provided a plasma processing method of a plasma processing apparatus including the steps of generating plasma in a processing chamber in which a set processing is performed on a substrate serving as an object to be processed; and performing the processing on the substrate by the plasma.

Abstract: A ceramic sprayed member-cleaning method which is capable of reliably suppressing desorption and attachment of water. The surface of a ceramic sprayed member and water are chemically bonded to each other, whereby the water is stabilized. Water physically adsorbed on the surface of the ceramic sprayed member is desorbed.

Abstract: [Problem to be Solved] In a plasma processing apparatus for executing a process using plasma, promoting the sharing of an apparatus in executing a plurality of different processes and plasma states amongst apparatuses in executing same processes in a plurality of apparatuses are provided. [Solution] A ring member formed of an insulating material is disposed to surround a to-be-treated substrate in a processing vessel and an electrode is installed in the ring member for adjusting a plasma sheath region. For example, a first DC voltage is applied to the electrode when a first process is performed on the to-be-treated substrate and a second DC voltage is applied to the electrode when a second process is performed on the to-be-treated substrate. In this case, the plasma state can be matched by applying an appropriate DC voltage according to each process or each apparatus executing the same process. Therefore, the sharing of an apparatus can be promoted and the plasma state can be readily adjusted.

Abstract: A container cleanliness measurement apparatus capable of preventing particles from being adhered to substrates, while improving the operation efficiency of a container for housing substrates. An FOUP inspection apparatus includes a particle-separation promoting nozzle for promoting separation of particles adhered to an inner wall of an FOUP and to carries for holding peripheral portions of wafers inside the FOUP, a particle collecting nozzle for collecting particles separated from the inner wall of the FOUP, etc., and a particle counter for measuring an amount of collected particles. The particle-separation promoting nozzle and the particle collecting nozzle constitute a probe nozzle which is adapted to enter inside the FOUP.

Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber so that deposits are detached therefrom to be monitored as particles.

Abstract: A substrate transfer module that can prevent corrosion of components, adhesion of particles to the substrate, and increases in the manufacturing cost and the size of the substrate transfer module. A substrate transfer module is connected to a substrate processing module. The substrate processing module implements desired processing on a substrate. A substrate transfer device transfers a substrate and includes a holding unit and a moving unit. The holding unit holds the substrate, and the moving unit moves the holding unit. A transfer chamber houses the substrate transfer device in an interior thereof that is isolated from an external atmosphere. An isolation device isolates at least the holding unit and the substrate held by the holding unit from an interior atmosphere of the transfer chamber.

Abstract: A gas purification apparatus capable of removing fine particles of substantially any size without lowering the efficiency of gas supply. A loader module of a substrate processing apparatus includes a fan filter unit for producing a downward flow of atmospheric air in the internal space of a transfer chamber. The fan filter unit includes a fan for generating an atmospheric air flow, a filter of mesh structure for trapping and removing particles mixed in the atmospheric air flow, an irradiation heater disposed between the fan and the filter, and a high temperature part disposed in the atmospheric air flow and higher in temperature than the filter.

Abstract: A gas-tight module capable of preventing the collapse of a pattern formed on a principal surface of a substrate, without lowering throughput. A load lock module of a substrate processing system includes a transfer arm, a chamber, and a load lock module exhaust system. A plate-like member is disposed in the chamber such as to face the principal surface of a wafer transferred into the chamber. An exhaust passage isolated from the remaining space in the chamber is defined by the wafer and the plate-like member at a location right above the principal surface of the wafer. The sectional area of the exhaust passage is smaller than that of the remaining space in the chamber.

Abstract: It is an object to provide a vacuum apparatus capable of evaluating its cleanness precisely by surely monitoring particles including deposits readily detached from the apparatus, and a particle monitoring method and program employed therein, and a window member for particle monitoring. A semiconductor manufacturing apparatus 1000 includes a processing chamber 100 for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber 100, a valve 120 being installed on the gas supply line. A rough pumping line 200 with a valve a is connected to a lower portion of the processing chamber 100. Installed on the rough pumping line 200 are a dry pump 220 for exhausting a gas in the processing chamber 100 and a particle monitoring unit 210 for monitoring particles between the valve a and the dry pump 220.

Abstract: An evacuation method which can reduce evacuation time without causing moisture-related problems. In a vacuum processing apparatus including a vacuum processing chamber, during the evacuation for the vacuum processing chamber, the pressure in the vacuum processing chamber is maintained at a pressure lower than or equal to the atmospheric pressure but higher than or equal to 6.7×102 Pa (5 Torr).

Abstract: A semiconductor manufacturing apparatus includes a processing chamber for performing a manufacturing processing on a wafer. A gas supply line for introducing a purge gas is connected to an upper portion of the processing chamber, a valve being installed on the gas supply line. A rough pumping line with a valve a is connected to a lower portion of the processing chamber. Installed on the rough pumping line are a dry pump for exhausting a gas in the processing chamber and a particle monitoring unit for monitoring particles between the valve a and the dry pump. In the semiconductor manufacturing apparatus, after the valve is opened, the purge gas is supplied to apply physical vibration due to shock wave in the processing chamber 100 so that deposits are detached therefrom to be monitored as particles.

Abstract: A substrate transfer member cleaning method that enables foreign matter attached to a substrate transfer member to be completely removed without bringing about a decrease in the throughput. A cleaning agent containing a cleaning substance in two phases of a vapor phase and a liquid phase and a high-temperature gas is jetted toward the substrate transfer member that transfers a substrate.

Abstract: To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.

Abstract: To clean an element in a vacuum chamber by causing particles sticking to the element to scatter, the present invention uses a means for applying a voltage to the element and causing the particles to scatter by utilizing Maxwell's stress, a means for electrically charging the particles and causing the particles to scatter by utilizing the Coulomb force, a means for introducing a gas into the vacuum chamber and causing the particles sticking to the element to scatter by causing a gas shock wave to hit the element, a means for heating the element and causing the particles to scatter by utilizing the thermal stress and thermophoretic force, or a means for causing the particles to scatter by applying mechanical vibrations to the element. The thus scattered particles are removed by carrying them in a gas flow in a relatively high pressure atmosphere.