Patents by Inventor Tsuyoshi Ohnishi
Tsuyoshi Ohnishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10026989Abstract: An Object of the invention is to obtain an all solid lithium battery having an excellent output performance. To achieve the object, a sulfide based solid electrolyte is used as an electrolyte; an oxide containing lithium, a metal element that acts as a redox couple, and a metal element that forms an electron-insulating oxide is used as a cathode active material; and the concentration of the metal element that forms the electron-insulating oxide on the surface of the cathode active material (oxide) that is in contact with the sulfide solid electrolyte is made high.Type: GrantFiled: March 23, 2011Date of Patent: July 17, 2018Assignees: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, TOYOTA JIDOSHA KABUSHIKI KAISHAInventors: Kazunori Takada, Xiaoxiong Xu, Tsuyoshi Ohnishi, Isao Sakaguchi, Ken Watanabe, Yasushi Tsuchida, Yukiyoshi Ueno, Koji Kawamoto
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Patent number: 8771872Abstract: An embodiment of the present application aims at providing a material which repeatedly undergoes a conversion reaction and an alloying reaction to have an improved columbic efficiency in a first cycle of the repeating, and thereby allowing the material to serve as a high-electrical capacity negative electrode of a lithium secondary battery. In order to attain the object, a negative-electrode material is made by mixed dispersion of (i) nanoparticles of an electrical conducting material having electronic conduction and (ii) nanoparticles of an electrode active material which is reducible to a simple substance which undergoes an alloying reaction with lithium. The electrical conducting material is a sulfide having electronic conduction, and the electrode active material is a sulfide of an element which undergoes the alloying reaction with lithium. Further, the element which undergoes the alloying reaction with lithium is silicon.Type: GrantFiled: May 13, 2010Date of Patent: July 8, 2014Assignee: National Institute for Materials ScienceInventors: Kazunori Takada, Bui Thi Hang, Tsuyoshi Ohnishi
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Patent number: 8686360Abstract: As sample sizes have decreased to microscopic levels, it has become desirable to establish a method for thin film processing and observation with a high level of positional accuracy, especially for materials which are vulnerable to electron beam irradiation. The technological problem is to judge a point at which to end FIB processing and perform control so that the portion to be observed ends up in a central portion of the thin film. The present invention enables display of structure in cross-section by setting a strip-like processing region in an inclined portion of a sample cross-section and enlarging the display of the strip-like processing region on a processing monitor in a short-side direction. It is then possible to check the cross-sectional structure without additional use of an electron beam. Since it is possible to check the processed section without using an electron beam, electron beam-generated damage or deformation to the processed section is avoided.Type: GrantFiled: December 8, 2010Date of Patent: April 1, 2014Assignee: Hitachi High-Technologies CorporationInventor: Tsuyoshi Ohnishi
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Patent number: 8455824Abstract: An object of the present invention relates to realizing the processing of a sample by charged particle beams and the monitoring of the processed cross-section with a high throughput. It is possible to process an accurate sample without an intended region lost even when the location and the size of the intended region are unknown by: observing a cross-sectional structure being processed by FIBs by using a secondary particle image generated from a sample by the ion beams shaving a cross section; forming at least two cross sections; and processing the sample while the processing and the monitoring of a processed cross section are carried out.Type: GrantFiled: August 31, 2012Date of Patent: June 4, 2013Assignee: Hitachi High-Technologies CorporationInventors: Hiroyuki Muto, Tsuyoshi Ohnishi, Isamu Sekihara
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Publication number: 20130065135Abstract: An Object of the invention is to obtain an all solid lithium battery having an excellent output performance. To achieve the object, a sulfide based solid electrolyte is used as an electrolyte; an oxide containing lithium, a metal element that acts as a redox couple, and a metal element that forms an electron-insulating oxide is used as a cathode active material; and the concentration of the metal element that forms the electron-insulating oxide on the surface of the cathode active material (oxide) that is in contact with the sulfide solid electrolyte is made high.Type: ApplicationFiled: March 23, 2011Publication date: March 14, 2013Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Kazunori Takada, Xiaoxiong Xu, Tsuyoshi Ohnishi, Isao Sakaguchi, Ken Watanabe, Yasushi Tsuchida, Yukiyoshi Ueno, Koji Kawamoto
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Patent number: 8377211Abstract: Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.Type: GrantFiled: February 1, 2007Date of Patent: February 19, 2013Assignee: National Institute for Materials ScienceInventors: Masatomo Sumiya, Mikk Lippmaa, Tsuyoshi Ohnishi, Eiji Fujimoto, Hideomi Koinuma
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Publication number: 20120326028Abstract: An object of the present invention relates to realizing the processing of a sample by charged particle beams and the monitoring of the processed cross section with a high throughput. It is possible to process an accurate sample without an intended region lost even when the location and the size of the intended region are unknown by: observing a cross-sectional structure being processed by FIBs by using a secondary particle image generated from a sample by the ion beams shaving a cross section; forming at least two cross sections; and processing the sample while the processing and the monitoring of a processed cross section are carried out.Type: ApplicationFiled: August 31, 2012Publication date: December 27, 2012Inventors: Hiroyuki MUTO, Tsuyoshi OHNISHI, Isamu SEKIHARA
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Publication number: 20120064400Abstract: An embodiment of the present application aims at providing a material which repeatedly undergoes a conversion reaction and an alloying reaction to have an improved coulombic efficiency in a first cycle of the repeating, and thereby allowing the material to serve as a high-electrical capacity negative electrode of a lithium secondary battery. In order to attain the object, a negative-electrode material is made by mixed dispersion of (i) nanoparticles of an electrical conducting material having electronic conduction and (ii) nanoparticles of an electrode active material which is reducible to a simple substance which undergoes an alloying reaction with lithium. The electrical conducting material is a sulfide having electronic conduction, and the electrode active material is a sulfide of an element which undergoes the alloying reaction with lithium. Further, the element which undergoes the alloying reaction with lithium is silicon.Type: ApplicationFiled: May 13, 2010Publication date: March 15, 2012Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Kazunori Takada, Bui Thi Hang, Tsuyoshi Ohnishi
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Patent number: 7928377Abstract: It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.Type: GrantFiled: October 26, 2005Date of Patent: April 19, 2011Assignee: Hitachi High-Technologies CorporationInventors: Tohru Ishitani, Tsuyoshi Ohnishi, Mitsugu Sato, Koichiro Takeuchi
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Publication number: 20110073758Abstract: As sample sizes have decreased to microscopic levels, it has become desirable to establish a method for thin film processing and observation with a high level of positional accuracy, especially for materials which are vulnerable to electron beam irradiation. The technological problem is to judge a point at which to end FIB processing and perform control so that the portion to be observed ends up in a central portion of the thin film. The present invention enables display of structure in cross-section by setting a strip-like processing region in an inclined portion of a sample cross-section and enlarging the display of the strip-like processing region on a processing monitor in a short-side direction. It is then possible to check the cross-sectional structure without additional use of an electron beam. Since it is possible to check the processed section without using an electron beam, electron beam-generated damage or deformation to the processed section is avoided.Type: ApplicationFiled: December 8, 2010Publication date: March 31, 2011Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventor: Tsuyoshi OHNISHI
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Patent number: 7915581Abstract: In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.Type: GrantFiled: January 14, 2009Date of Patent: March 29, 2011Assignee: Hitachi High-Technologies CorporationInventors: Tohru Ishitani, Uki Kabasawa, Tsuyoshi Ohnishi
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Patent number: 7902505Abstract: When a sample includes repeated cells, a scale pattern corresponding to the repeated cells is generated. Next, the scale pattern generated is superimposed on the image of the repeated cells of the sample, thereby identifying a destination cell. Moreover, disposition of the repeated cells of the sample is determined based on positions of at least three ends of the repeated cells. Then, the position of the destination cell is identified from this disposition of the repeated cells. Furthermore, a zoom image is generated by a combination of a zoom based on beam deflection function and a zoom based on software. Then, the image shift is performed by software without displacing a sample stage.Type: GrantFiled: October 3, 2008Date of Patent: March 8, 2011Assignee: Hitachi High-Technologies CorporationInventor: Tsuyoshi Ohnishi
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Patent number: 7872230Abstract: As sample sizes have decreased to microscopic levels, it has become desirable to establish a method for thin film processing and observation with a high level of positional accuracy, especially for materials which are vulnerable to electron beam irradiation. The technological problem is to judge a point at which to end FIB processing and perform control so that the portion to be observed ends up in a central portion of the thin film. The present invention enables display of structure in cross-section by setting a strip-like processing region in an inclined portion of a sample cross-section and enlarging the display of the strip-like processing region on a processing monitor in a short-side direction. It is then possible to check the cross-sectional structure without additional use of an electron beam. Since it is possible to check the processed section without using an electron beam, electron beam-generated damage or deformation to the processed section is avoided.Type: GrantFiled: May 15, 2008Date of Patent: January 18, 2011Assignee: Hitachi High-Technologies CorporationInventor: Tsuyoshi Ohnishi
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Publication number: 20100058987Abstract: Disclosed is a device for vacuum processing that performs vapor-deposition on a substrate being heated in a vacuum chamber; the device, wherein the chamber has a light transmissible window formed in a section of the chamber; the light transmissible window and a holding part holding the substrate are connected by a linear space isolated from other parts in the chamber; a laser emitter is installed outside the light transmissible window; and the laser emitter emits a laser beam to the substrate through the linear space, thereby heating the substrate. This device enables laser heating, eliminating conventional drawbacks such as a decrease in laser output.Type: ApplicationFiled: February 1, 2007Publication date: March 11, 2010Inventors: Masatomo Sumiya, Mikk Lippmaa, Tsuyoshi Ohnishi, Eiji Fujimoto, Hideomi Koinuma
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Patent number: 7612337Abstract: A focused ion beam system capable of acquiring surface structure information, internal structure information, and internal composition information about a sample simultaneously from the same field of view of the sample. A method of sample preparation and observation employs such focused ion beam system to accurately set a sample processing position based on information about the structure and composition of the sample acquired from multiple directions of the sample, and to process and observe the sample. The system includes, in order to acquire the sample structure and composition information simultaneously, a secondary electron detector, a transmission electron detector, and an energy dispersive X-ray spectroscope or an electron energy loss spectroscope, and employs a stub having the sample rotating and tilting function. The method includes a marking process.Type: GrantFiled: January 18, 2007Date of Patent: November 3, 2009Assignee: Hitachi High-Technologies CorporationInventors: Yuya Suzuki, Takeo Kamino, Toshie Yaguchi, Mitsuru Konno, Tsuyoshi Ohnishi
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Publication number: 20090127458Abstract: In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.Type: ApplicationFiled: January 14, 2009Publication date: May 21, 2009Applicant: Hitachi High-TechnologiesInventors: Tohru ISHITANI, Uki Kabasawa, Tsuyoshi Ohnishi
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Publication number: 20090039260Abstract: When a sample includes repeated cells, a scale pattern corresponding to the repeated cells is generated. Next, the scale pattern generated is superimposed on the image of the repeated cells of the sample, thereby identifying a destination cell. Moreover, disposition of the repeated cells of the sample is determined based on positions of at least three ends of the repeated cells. Then, the position of the destination cell is identified from this disposition of the repeated cells. Furthermore, a zoom image is generated by a combination of a zoom based on beam deflection function and a zoom based on software. Then, the image shift is performed by software without displacing a sample stage.Type: ApplicationFiled: October 3, 2008Publication date: February 12, 2009Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATIONInventor: Tsuyoshi Ohnishi
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Patent number: 7482586Abstract: In an SEM observation in a depth direction of a cross section processed by repeated FIB cross-sectioning and SEM observation to correct a deviation in an observation field of view and a deviation in focus, are corrected, the deviations occurring when a processed cross section moves in the depth direction thereof; information on a height and a tilt of a surface of cross section processing area is calculated before the processing, the above information is used, the deviation in a field of view and the deviation in focus in SEM observation, which correspond to an amount of movement of the cross section at a time of the processing, are predicted, and the SEM is controlled based on the predicted values.Type: GrantFiled: July 7, 2006Date of Patent: January 27, 2009Assignee: Hitachi High-Technologies CorporationInventors: Tohru Ishitani, Uki Kabasawa, Tsuyoshi Ohnishi
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Publication number: 20090020698Abstract: An object of the present invention relates to realizing the processing of a sample by charged particle beams and the monitoring of the processed cross-section with a high throughput. It is possible to process an accurate sample without an intended region lost even when the location and the size of the intended region are unknown by: observing a cross-sectional structure being processed by FIBs by using a secondary particle image generated from a sample by the ion beams shaving a cross section; forming at least two cross sections; and processing the sample while the processing and the monitoring of a processed cross section are carried out.Type: ApplicationFiled: July 18, 2008Publication date: January 22, 2009Inventors: Hiroyuki MUTO, Tsuyoshi Ohnishi, Isamu Sekihara
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Publication number: 20080283746Abstract: As sample sizes have decreased to microscopic levels, it has become desirable to establish a method for thin film processing and observation with a high level of positional accuracy, especially for materials which are vulnerable to electron beam irradiation. The technological problem is to judge a point at which to end FIB processing and perform control so that the portion to be observed ends up in a central portion of the thin film. The present invention enables display of structure in cross-section by setting a strip-like processing region in an inclined portion of a sample cross-section and enlarging the display of the strip-like processing region on a processing monitor in a short-side direction. It is then possible to check the cross-sectional structure without additional use of an electron beam. Since it is possible to check the processed section without using an electron beam, electron beam-generated damage or deformation to the processed section is avoided.Type: ApplicationFiled: May 15, 2008Publication date: November 20, 2008Inventor: Tsuyoshi OHNISHI