Abstract: Provided is a magnetoresistance effect device comprising a magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer and a spacer layer, and a high-frequency signal line. The high-frequency signal line includes an overlapping part disposed at a position overlapping the magnetoresistance effect element and a non-overlapping part disposed at a position not overlapping the magnetoresistance effect element in a plan view from a stacking direction. At least a part of the non-overlapping part is disposed below the overlapping part in the stacking direction, assuming that the overlapping part is above the magnetoresistance effect element in the stacking direction.

Abstract: In order to provide an X-ray CT apparatus which can reconstruct a tomographic image with less unevenness in image quality at a high speed on the basis of projection data which is obtained by irradiating an object with X-rays, the X-ray CT apparatus of the invention includes an inverse projection phase width setting unit that sets an inverse projection phase width which is an angular width of projection data used for reconstruction, for each tomographic image, and a view weight calculation unit that calculates a view weight which is a weight coefficient multiplied by projection data within the inverse projection phase width and is a function of a view angle, for each position of a pixel of a tomographic image.

Abstract: A manipulation apparatus includes an image display device for displaying an image containing a command portion, an operation unit manually operable by a user, a pointer display unit for displaying a pointer at a position corresponding to an operation state of an operation unit on the image displayed on the image display unit, a vibration application unit for applying vibration to the operation unit, and a direction determination unit for, based on a positional relationship between the command portion and the pointer or based on contents of the command corresponding to the command portion, determining a direction of a force that is first applied to the operation unit as the vibration by the vibration application unit when the pointer is displayed on the command portion.

Abstract: A magnetoresistance effect device includes first and second ports, first and second circuit units, and reference potential and DC applying terminals. The first and second circuit units respectively include first and second magnetoresistance effect elements and first and second conductors. In the second conductor, the positional relationship between first and second end faces respectively on the first and opposite conductor sides in the first magnetoresistance effect element with respect to a flowing direction of a direct current flowing inside the first magnetoresistance effect element and the positional relationship between first and second end faces respectively on the second and opposite conductor sides in the second magnetoresistance effect element with respect to a flowing direction of a direct current flowing in the second magnetoresistance effect element are opposite each other.

Abstract: A magnetoresistive effect device includes an input port, an input-side signal line, an MR unit including a magnetoresistive effect element and a magnetic-field generating signal line, and an output unit including a magnetoresistive effect element, an output-side signal line, and an output port. The magnetoresistive effect device further includes a DC application terminal. The magnetoresistive effect element is connected to the output port via the output-side signal line in the output unit. The input-side signal line is arranged so that a high frequency magnetic field generated from the input-side signal line is applied to the magnetoresistive effect element in the MR unit. In the MR unit, the magnetoresistive effect element is connected to the magnetic-field generating signal line. The magnetic-field generating signal line is arranged so that a high-frequency magnetic field generated from magnetic-field generating signal line is applied to the magnetoresistive effect element in the output unit.

Abstract: The magnetoresistance effect device includes first and second ports, a first circuit unit and a second circuit unit connected between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, the first circuit unit includes a first magnetoresistance effect element, the second circuit unit includes a second magnetoresistance effect element and a first conductor separated from the second magnetoresistance effect element with an insulating body therebetween and a first end portion of the first conductor is connected to an input side of high frequency current such that high frequency magnetic field generated by the high frequency current flowing through the first conductor is applied to the magnetization free layer of the second magnetoresistance effect element.

Abstract: A magnetoresistance effect device includes a first port, a second port, a first circuit unit and a second circuit unit which are connected in series between the first port and the second port, a shared reference electric potential terminal or a first reference electric potential terminal and a second reference electric potential terminal, and a shared DC application terminal or a first DC application terminal and a second DC application terminal, wherein the first circuit unit and the second circuit unit include a magnetoresistance effect element and a conductor connected to one end thereof, a first end portion of the conductor is connected to a high-frequency current input side, and a second end portion of the first conductor is connected to the shared reference electric potential terminal, the first reference electric potential terminal or the second reference electric potential terminal.

Abstract: Presented is battery packaging material which is made of a laminate including, as the essentials, a base material layer, a metal layer and a sealant layer in this order. When a product obtained by packaging a battery element with the packaging material in a hermetically sealed state through heat sealing is heated, the packaging material delaminates at least at a part of the interface between the metal layer and the outside surface of the sealant layer with the hermetically sealed state being kept, and thereafter works so as to make the product unsealed.

Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.

Abstract: A battery packaging material includes a laminate that includes at least a base material layer, a metal layer, an insulating layer, and a sealant layer laminated in this order. The insulating layer is formed of a resin composition containing a modified polyolefin resin modified with an unsaturated carboxylic acid or acid anhydride thereof and has a hardness, when measured by using a nanoindenter and pressing an indenter 5 ?m into the insulating layer from a cross-section of the laminate in the laminating direction thereof, that ranges from 10 MPa to 300 MPa. In the sealant layer, an elastic modulus, when measured by using a nanoindenter and pressing an indenter 5 ?m into the sealant layer from a cross-section of the laminate in the laminating direction thereof, ranges from 100 MPa to 1000 MPa.

Abstract: A magnetoresistance effect device includes: a first magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer, and a first spacer layer, a metal layer, a first electrode, an input terminal, an output terminal, and a reference potential terminal, wherein the first ferromagnetic layer, the first spacer layer, the second ferromagnetic layer, and the first electrode are disposed in this order, the second ferromagnetic layer is in electrical contact with the first electrode, which is connected to the output terminal configured to output a high-frequency signal, the metal layer is connected to the input and reference potential terminals so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal, which is in electrical contact with the first ferromagnetic layer, and the first magnetoresistance effect element has an application terminal configured to apply a DC current or a DC voltage.

Abstract: [Object] To provide a semiconductor apparatus and a method of controlling a MOS transistor, with which a leak current of the MOS transistor can be suppressed. [Solving Means] A semiconductor apparatus includes a MOS transistor and a voltage application unit that applies, when the MOS transistor is off, a voltage for controlling a threshold value of the MOS transistor in a shallower direction onto a substrate of the MOS transistor.

Abstract: A power-cell packaging material including a layered body obtained by layering at least a substrate layer, a metal layer, an insulating layer, and a sealant layer, in this order. The insulating layer has a hardness in the range of 10-300 MPa, when measured by using a nanoindenter and pressing the indenter 5 ?m into the insulating layer from a cross-section of the layered body in the layering direction thereof.

Abstract: The magnetoresistance effect device includes: a first port; a second port; a magnetoresistance effect element; a first signal line that is connected to the first port and applies a high frequency magnetic field to the magnetoresistance effect element; a second signal line that connects the second port and the magnetoresistance effect element to each other; and a direct current application terminal capable of being connected to a power supply that applies a direct current or a direct current voltage. The first signal line includes a magnetic field generator, which extends in a first direction, at a position in the lamination direction of the magnetoresistance effect element or an in-plane direction that is orthogonal to the lamination direction, and the magnetic field generator and the magnetoresistance effect element include an overlapping portion as viewed from the lamination direction in which the magnetic field generator is disposed, or the in-plane direction.

Abstract: A magnetoresistance effect device includes a first port, a second port, a magnetoresistance effect element, a first signal line that is connected to the first port and applies a high-frequency magnetic field to the magnetoresistance effect element, a second signal line that connects the second port to the magnetoresistance effect element, and a direct current application terminal that is connected to a power source configured to apply a direct current or a direct voltage in a lamination direction of the magnetoresistance effect element. The first signal line includes a plurality of high-frequency magnetic field application areas capable of applying a high-frequency magnetic field to the magnetoresistance effect element, and the plurality of high-frequency magnetic field application areas in the first signal line are disposed at positions at which high-frequency magnetic fields generated in the high-frequency magnetic field application areas reinforce each other in the magnetoresistance effect element.

Abstract: Magnetoresistive effect device including magnetoresistive effect element which high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including magnetization fixed, spacer, and magnetization free layer wherein magnetization direction is changeable; first and second ports; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. Closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. Magnetoresistive effect element is arranged wherein direct current input from direct-current input terminal flows through magnetoresistive effect element in direction from magnetization fixed layer to magnetization free layer.

Abstract: A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed.

Abstract: A thermal transfer sheet includes a support film and a transfer layer provided on one surface of the support film. The transfer layer at least includes a decorative layer and an adhesive layer provided on an obverse side of the decorative layer. The adhesive layer includes a first adhesive layer and a second adhesive layer laminated on the first adhesive layer. The first adhesive layer is positioned on an obverse side of the second adhesive layer. The first adhesive layer is made of a first resin having thermal plasticity and has a lower viscosity than the second adhesive layer. The second adhesive layer is made of a second resin having thermal plasticity and has a higher glass-transition point than the first adhesive layer. Monomer units constituting the first resin and monomer units constituting the second resin are partly or entirely identical.

Abstract: A magnetoresistive effect device includes a first magnetoresistive effect element, a second magnetoresistive effect element, a first port, a second port, a signal line, and a direct-current input terminal. The first port, the first magnetoresistive effect element, and the second port are connected in series to each other in this order via the signal line. The second magnetoresistive effect element is connected to the signal line in parallel with the second port. The first magnetoresistive effect element and the second magnetoresistive effect element are formed so that the relationship between the direction of direct current that is input from the direct-current input terminal and that flows through the first magnetoresistive effect element and the order of arrangement of a magnetization fixed layer, a spacer layer, and a magnetization free layer in the first magnetoresistive effect element is opposite to the above relationship in the second magnetoresistive effect element.

Abstract: A commutator includes an insulating section that is formed in a tube shape including a shaft insertion hole through which a shaft is inserted, and that is formed with an indented portion in an end portion at one side in an axial direction of the shaft. The commutator also includes plural segments that are supported by an outer peripheral portion of the insulating section, that are arrayed around a circumferential direction of the insulating section with spacings therebetween, and that are each provided with an anchor portion at an end portion at the one side in the axial direction of the shaft. The commutator also includes a first, second, third short-circuit wires, each connecting the anchor portion of respective one segment to the anchor portion of respective another segment, and at least a portion being disposed inside the indented portion formed at the insulating section.