Patents by Inventor Tsuyoshi Takahashi
Tsuyoshi Takahashi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250035699Abstract: A probe unit includes: a plurality of first contact probes each coming into contact with an electrode to be contacted on one end side in a longitudinal direction; a second contact probe connected to an external ground; and a probe holder configured to hold the first and second contact probes, the probe holder including a first hollow portion configured to allow the first contact probes to be inserted therethrough and hold the first contact probes, a second hollow portion configured to allow the second contact probe to be inserted therethrough and hold the second contact probe, and a through-hole provided around the first hollow portion, wherein the probe holder includes a conductive portion that constitutes the through-hole and electrically connects the through-hole and the second contact probe.Type: ApplicationFiled: October 10, 2024Publication date: January 30, 2025Applicant: NHK Spring Co., Ltd.Inventors: Tsuyoshi Inuma, Shuji Takahashi, Kazuya Soma, Takashi Nidaira, Yuya Hironaka
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Patent number: 12209780Abstract: A distributor includes at least: a first flow path through which refrigerant flowing in from a refrigerant inflow unit flows in a first direction toward a heat transfer tube disposed on the side of a refrigerant outflow unit; two second flow paths branched from the first flow path; two third flow paths, through each of which the refrigerant flows in a second direction opposite to the first direction; two fourth flow paths, each of which is formed to protrude from a main body toward the second direction and through each of which the refrigerant flows in a third direction intersecting the two third flow paths; and two fifth flow paths, through each of which the refrigerant flows in the first direction.Type: GrantFiled: October 21, 2020Date of Patent: January 28, 2025Assignee: Mitsubishi Electric CorporationInventors: Atsushi Takahashi, Tsuyoshi Maeda, Satoru Yanachi
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Publication number: 20250024616Abstract: There is provided a supporting body that is able to select a form of support to a display unit in accordance with a user's purpose or preference, an installation environment, or the like. The supporting body supports the display unit, and includes a first supporting unit and a second supporting unit that are detachably provided on the display unit, and a first form and a second form are configured to be selectable. In the first form, the first supporting unit is mounted at a first position of the display unit and the second supporting unit is mounted at a second position of the display unit. In the second form, the second supporting unit is mounted at the first position or a third position of the display unit, and the first supporting unit is mounted at the second position or a fourth position of the display unit.Type: ApplicationFiled: July 15, 2024Publication date: January 16, 2025Inventors: Hiroki MATSUOKA, Masaki FUKANO, Toshiaki TAKAHASHI, Hiroyuki TAKAYAMA, Makoto KIKUCHI, Tsuyoshi IWATSUKI, Hiroaki YOKOTA, Shigeya KUWAO, Hiroyuki SUZUKAWA
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Publication number: 20240431216Abstract: A Josephson device includes: a first superconducting metal layer that includes a first surface; a second superconducting metal layer that includes a second surface that faces the first surface; and an insulating layer provided between the first surface and the second surface. An outline of the second surface is inside an outline of the first surface in a plan view from a direction perpendicular to the first surface.Type: ApplicationFiled: June 14, 2024Publication date: December 26, 2024Applicant: Fujitsu LimitedInventor: Tsuyoshi TAKAHASHI
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Publication number: 20240423099Abstract: A method for manufacturing a Josephson junction device, includes: forming a mask layer on a substrate; forming, with the mask layer as a mask, a first superconducting film above the substrate by first film formation from a first oblique direction; forming an insulating film at a surface of the first superconducting film; and forming, with the mask layer as the mask, a second superconducting film having a region overlapping the first superconducting film via the insulating film by second film formation from a second oblique direction, wherein the mask layer includes: a first mask pattern in a first region of the substrate and a second mask pattern that is positioned in a second region of the substrate, and the second region is positioned closer to an end of the substrate than the first region.Type: ApplicationFiled: September 3, 2024Publication date: December 19, 2024Applicant: Fujitsu LimitedInventor: Tsuyoshi TAKAHASHI
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Publication number: 20240399883Abstract: The disclosed vehicle drive device (10) includes: motor housings (11,12), a gearbox housing (13), an inverter case (14), and a PN line (9). The motor housings (11,12) form respective exteriors of a left motor (1) and a right motor (2) that drive left and right wheels of a vehicle with electric power of a battery. The gearbox housing (13) incorporates therein a gearbox (3) that amplifies torque of the left and right motors and that transmits the amplified torque to the left and right wheels, is sandwiched between the left and right motor housings (11,12), and is offset in a front-rear direction from the left and right motor housings (11,12). The inverter case (14) incorporates therein a pair of semiconductor modules (6,7) and is arranged above the left and right motor housings (11,12). The PN line (9) connects the battery to the semiconductor modules (6,7) from a lower surface side of the inverter case (14) so as to pass through a first space (41).Type: ApplicationFiled: September 28, 2022Publication date: December 5, 2024Applicants: MITSUBISHI JIDOSHA KOGYO KABUSHIKI KAISHA, MEIDENSHA CORPORATIONInventors: Tsuyoshi TAKAHASHI, Kiminobu TERAO, Yosuke MORIMOTO, Takuya OGASAWARA, Hiromichi AKIYAMA, Dai OONO
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Publication number: 20240399882Abstract: The disclosed vehicle drive device (10) includes: left and right motors (1,2) that drive left and right wheels of the vehicle; a gearbox (3) that is sandwiched between the left and right motors (1,2); and an inverter (4) that is arranged in a mounting space (S) over the left and right motors (1,2) and the gearbox (3). The gearbox (3) forms, in conjunction with respective motor housings (11,12) of the left and right motors (1,2), a depressed portion (8) depressed downward. The inverter (4) includes a cover (15) that is in a flat-plate shape, is attached to a tray unit (16), and covers the capacitor (5) and a semiconductor module (6) from above the capacitor (5) and the semiconductor module (6). The capacitor (5) is attached to a lower surface of the cover (15) and is arranged in the depressed portion (8). The semiconductor module (6) is attached to the lower surface of the cover (15) and is displaced from each of the capacitor (5) and the rotating shafts (C) of the motors (1,2) when seen from above.Type: ApplicationFiled: September 28, 2022Publication date: December 5, 2024Applicants: MITSUBISHI JIDOSHA KOGYO KABUSHIKI KAISHA, MEIDENSHA CORPORATIONInventors: Tsuyoshi TAKAHASHI, Kiminobu TERAO, Yosuke MORIMOTO, Takuya OGASAWARA, Hiromichi AKIYAMA, Dai OONO
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Publication number: 20240397679Abstract: A vehicle drive device (10) includes: a motor unit (1) that includes a motor for driving mounted on a vehicle and a gear mechanism that transmits torque of the motor to each of left and right wheels of the vehicle; and an inverter (4) that is arranged over the motor unit (1) and that includes a capacitor (5) smoothing electricity and a semiconductor module (6) including a plurality of switching elements, wherein the inverter (4) includes a tray unit (16) that accommodates the capacitor (5) and the semiconductor module (6), and a cover (15) that is in a flat-plate shape, is attached to the tray unit (16), and covers the capacitor (5) and the semiconductor module (6) from above the capacitor (5) and the semiconductor module (6), the cover(15) is integrated with a cooling unit (20) through which a coolant for cooling the inverter (4) flows, and the capacitor (5) and the semiconductor module (6) are attached to a lower surface (17) of the cover (15).Type: ApplicationFiled: September 28, 2022Publication date: November 28, 2024Applicants: MITSUBISHI JIDOSHA KOGYO KABUSHIKI KAISHA, MEIDENSHA CORPORATIONInventors: Tsuyoshi TAKAHASHI, Kiminobu TERAO, Yosuke MORIMOTO, Takuya OGASAWARA, Hiromichi AKIYAMA, Dai OONO
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Publication number: 20240389478Abstract: An electronic device including: a bump that includes a tapered protrusion and a tapered conductive film, the tapered protrusion including a base material of a substrate and of which an area of a cross section that intersects with a normal direction of the substrate is gradually reduced toward a front end, the tapered conductive film being a part of the bump that covers a surface of the protrusion and reflects a shape of the protrusion.Type: ApplicationFiled: July 25, 2024Publication date: November 21, 2024Applicant: Fujitsu LimitedInventors: Masatoshi TAKENOUCHI, Norinao KOUMA, Takeaki SHIMANOUCHI, Tsuyoshi TAKAHASHI
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Patent number: 12009217Abstract: Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.Type: GrantFiled: March 4, 2020Date of Patent: June 11, 2024Assignee: Tokyo Electron LimitedInventors: Tsuyoshi Takahashi, Yu Nunoshige
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Patent number: 11840759Abstract: A method includes: forming a titanium nitride base film containing silicon by alternately repeating: precipitation of titanium nitride by alternately and repeatedly supplying a titanium-containing gas, and supplying a nitriding gas to a substrate on which a recess is formed; and precipitation of silicon nitride by alternately and repeatedly supplying a silicon-containing gas, and supplying a nitriding gas to the substrate; and subsequently, forming a tungsten film so as to bury tungsten in the recess in which the titanium nitride base film is formed, by alternately and repeatedly supplying a raw material gas containing a tungsten raw material and a reaction gas reacting with the raw material gas, to the substrate. A supply flow rate of the silicon-containing gas is adjusted so that a content of the silicon in the titanium nitride base film is high on an opening side rather than on an inner side of the recess.Type: GrantFiled: March 7, 2022Date of Patent: December 12, 2023Assignee: Tokyo Electron LimitedInventors: Masafumi Takahashi, Kenji Suzuki, Tsuyoshi Takahashi, Masaki Sano
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Publication number: 20230380913Abstract: A surgical system according to an embodiment may include: manipulators supporting an endoscope and surgical instruments, respectively; a remote control apparatus including: a first display device including a first display to display an endoscope image captured by the endoscope; and two operation handles to operate two of the surgical instruments; a controller configured to display, on the first display, a graphical user interface superimposed on the endoscope image; and an input device provided to at least one of the manipulators to receive a predetermined input from a user, wherein the controller is configured to display, in response to the predetermined input through the input device when a distal end of at least one of the surgical instruments is located outside a field of view of the endoscope, a mark indicating the surgical instrument outside the field of view of the endoscope in the graphical user interface.Type: ApplicationFiled: May 23, 2023Publication date: November 30, 2023Applicant: MEDICAROID CORPORATIONInventors: Jota IDA, Tetsushi ITO, Tsuyoshi TAKAHASHI, Kazuya SASAMORI
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Patent number: 11820064Abstract: Provided is a blow molding machine including an injection molding unit and a blow molding unit, wherein the injection molding unit includes a preform mold and an injection device configured to supply resin to the preform mold, wherein the injection device is fixed to a support plate, and wherein the support plate includes a position adjustment mechanism capable of adjusting a position of the injection device in an upper and lower direction with respect to the preform mold.Type: GrantFiled: July 15, 2021Date of Patent: November 21, 2023Assignee: NISSEI ASB MACHINE CO., LTD.Inventors: Hiroshi Horigome, Tsuyoshi Takahashi
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Publication number: 20230326832Abstract: A semiconductor device includes a substrate; a gate electrode, a source electrode, and a drain electrode, the gate electrode, the source electrode and the drain electrode being formed on the substrate; a plurality of nonconductive nanowires formed two-dimensionally on an upper surface of the substrate so as to extend perpendicularly to the upper surface of the substrate; an electrode pad formed at upper ends of the plurality of nanowires so as to have a gap between the electrode pad and the substrate, the electrode pad being supported by the plurality of nanowires; and an extraction electrode connecting the electrode pad and the gate electrode.Type: ApplicationFiled: June 13, 2023Publication date: October 12, 2023Applicant: FUJITSU LIMITEDInventors: Tsuyoshi TAKAHASHI, Kenichi KAWAGUCHI
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Patent number: 11732357Abstract: A substrate processing method in substrate processing apparatus comprises repeating cycle including: supplying source gas into process container causing the source gas to be adsorbed to substrate; exhausting excess source gas from the process container; supplying reaction gas into the process container causing the reaction gas to react with the source gas; and exhausting excess reaction gas, wherein at least one of a gap width between placement stage and member forming processing space between the member and the stage and degree of opening of pressure adjustment valve in at least one of the supplying the source gas and the supplying the reaction gas is smaller than at least one of a gap width between the stage and the member and the degree of opening of the pressure adjustment valve in at least one of the exhausting the excess source gas and the exhausting the excess reaction gas, respectively.Type: GrantFiled: June 4, 2020Date of Patent: August 22, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Tsuyoshi Takahashi, Mitsuhiro Okada, Yasushi Fujii, Yu Nunoshige, Shinji Kawasaki, Hirotaka Kuwada, Toshio Takagi
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Publication number: 20230037960Abstract: A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.Type: ApplicationFiled: November 30, 2020Publication date: February 9, 2023Inventors: Seokhyoung HONG, Tsuyoshi TAKAHASHI, Taichi MONDEN
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Publication number: 20230030762Abstract: A method of forming a titanium nitride film on a substrate. The method includes: performing treatment of changing hydrophilicity of a base film formed on a substrate including a surface on which the base film capable of having its hydrophilicity changed is formed; and forming a titanium nitride film by vapor phase growth on a top surface of the base film subjected to the treatment of changing the hydrophilicity.Type: ApplicationFiled: July 14, 2022Publication date: February 2, 2023Inventors: Kensuke HIGUCHI, Asaka FUJIKAWA, Tsuyoshi TAKAHASHI
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Publication number: 20230015231Abstract: A semiconductor device includes a plurality of tunnel diodes, each of which includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type that is provided above the first semiconductor region, the second semiconductor region being a nanowire shape; an insulating film provided around a side surface of the second semiconductor region; a plurality of first electrodes, each coupled to the first semiconductor region; and a plurality of second electrodes, each coupled to the second semiconductor region, wherein the second electrode has a first surface that faces the side surface of the second semiconductor region across the insulating film, and a diameter of a second semiconductor region of a first tunnel diode of the plurality of tunnel diodes is different from a diameter of a second semiconductor region of a second tunnel diode.Type: ApplicationFiled: September 28, 2022Publication date: January 19, 2023Applicant: FUJITSU LIMITEDInventors: Kenichi Kawaguchi, Tsuyoshi Takahashi
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Publication number: 20220356565Abstract: A method of forming a titanium nitride film includes: forming the titanium nitride film by alternately repeating supplying a raw material gas, which contains a titanium compound including chlorine and titanium, to a substrate accommodated in a processing container, and supplying a reaction gas, which contains a nitrogen compound including nitrogen and reacts with the titanium compound to form titanium nitride, to the substrate, wherein the forming the titanium nitride film is executed under a condition in which a pressure in the processing container is set within a range of 2.7 kPa to 12.6 kPa so that a specific resistance of the titanium nitride film becomes 57 micro-ohm-cm or less.Type: ApplicationFiled: May 2, 2022Publication date: November 10, 2022Inventors: Tsuyoshi TAKAHASHI, Seokhyoung HONG, Kensuke HIGUCHI
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Publication number: 20220290294Abstract: A method includes: forming a titanium nitride base film containing silicon by alternately repeating: precipitation of titanium nitride by alternately and repeatedly supplying a titanium-containing gas, and supplying a nitriding gas to a substrate on which a recess is formed; and precipitation of silicon nitride by alternately and repeatedly supplying a silicon-containing gas, and supplying a nitriding gas to the substrate; and subsequently, forming a tungsten film so as to bury tungsten in the recess in which the titanium nitride base film is formed, by alternately and repeatedly supplying a raw material gas containing a tungsten raw material and a reaction gas reacting with the raw material gas, to the substrate. A supply flow rate of the silicon-containing gas is adjusted so that a content of the silicon in the titanium nitride base film is high on an opening side rather than on an inner side of the recess.Type: ApplicationFiled: March 7, 2022Publication date: September 15, 2022Inventors: Masafumi TAKAHASHI, Kenji SUZUKI, Tsuyoshi TAKAHASHI, Masaki SANO