Patents by Inventor Tsuyoshi Uematsu

Tsuyoshi Uematsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20030132498
    Abstract: The prevention of the deterioration of the minority carrier lifetime of a semiconductor substrate can be achieved by patterning the material of an impurity diffusion protecting layer on the surface of a semiconductor substrate by a making except a thermal oxidation process of the semiconductor substrate, for example by printing and firing paste material or by depositing paste material using a mask by CVD and forming a diffusion layer in the shape of an inverted pattern of the impurity diffusion protecting layer. Also, a low-priced photovoltaic device the photo-electric conversion efficiency of which is high can be manufactured by patterning and forming them.
    Type: Application
    Filed: July 15, 2002
    Publication date: July 17, 2003
    Applicant: Hitachi, Ltd.
    Inventors: Tsuyoshi Uematsu, Ken Tsutsui, Toshio Johge
  • Patent number: 6461947
    Abstract: To form an impurity diffusion layer on only one side of a semiconductor substrate at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is perfomed on them, or at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is performed on them and then the semiconductor substrate and the diffusion protecting plate are arranged such that those sides on which the impurity diffusion has been performed face each other and a second impurity diffusion is performed. The diffusion protecting plate may be replaced by a semiconductor substrate. The first and second impurity diffusions may be performed using an impurity of the same conductivity type.
    Type: Grant
    Filed: September 7, 2000
    Date of Patent: October 8, 2002
    Assignee: Hitachi, Ltd.
    Inventors: Tsuyoshi Uematsu, Yoshiaki Yazawa, Hiroyuki Ohtsuka, Ken Tsutsui
  • Publication number: 20020046765
    Abstract: A photovoltaic cell produced by adhering a material for masking layer to a surface of a semiconductor substrate in pattern state to form the masking layer, and forming a dopant layer on the portion having no masking layer by gas phase diffusion or solid phase diffusion is high in photoelectric conversion efficiency and is effective for preventing lowering of minority carrier lifetime of the semiconductor substrate.
    Type: Application
    Filed: March 20, 2001
    Publication date: April 25, 2002
    Inventors: Tsuyoshi Uematsu, Yoshiaki Yazawa, Hiroyuki Ohtsuka, Ken Tsutsui
  • Patent number: 6323415
    Abstract: A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements.
    Type: Grant
    Filed: September 17, 1999
    Date of Patent: November 27, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Tsuyoshi Uematsu, Terunori Warabisako, Yoshiaki Yazawa, Yoshinori Miyamura, Ken Tsutsui, Shin-ichi Muramatsu, Hiroyuki Ohtsuka, Junko Minemura
  • Patent number: 6294723
    Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like.
    Type: Grant
    Filed: February 23, 1999
    Date of Patent: September 25, 2001
    Assignee: Hitachi, Ltd.
    Inventors: Tsuyoshi Uematsu, Terunori Warabisako, Yoshiaki Yazawa, Yoshinori Miyamura, Ken Tsutsui, Shin-ichi Muramatsu, Hiroyuki Ohtsuka, Junko Minemura
  • Publication number: 20010008144
    Abstract: Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors each being in contact with one of the concentrators, which is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not perpendicularly but obliquely from the right, upper side, for example, in the case where the module is established in contact with a curved plane of a roof or the like.
    Type: Application
    Filed: February 23, 1999
    Publication date: July 19, 2001
    Inventors: TSUYOSHI UEMATSU, TERUNORI WARABISAKO, YOSHIAKI YAZAWA, YOSHINORI MIYAMURA, KEN TSUTSUI, SHIN-ICHI MURAMATSU, HIROYUKI OHTSUKA, JUNKO MINEMURA
  • Patent number: 5024953
    Abstract: An opto-electric transducing element and a method for producing the same use a corrugated semiconductor substrate to produce an opto-electric transducing element. The element has a reduced effective thickness and an improved opto-electric conversion efficiency, while maintaining the mechanical strength.
    Type: Grant
    Filed: March 20, 1989
    Date of Patent: June 18, 1991
    Assignee: Hitachi, Ltd.
    Inventors: Tsuyoshi Uematsu, Tadashi Saitoh
  • Patent number: 4916503
    Abstract: A photo-electric converting device has a plurality of emitters with a non-circular or non-dot shape in order to improve the photo-electric converting efficiency. The distance between the adjacent emitters has a predetermined relation to the average diffusion length of the minority carriers in a base layer in order to further improve the photo-electric conversion efficiency. The device is formed to have groove structures to restrain the photo-electric conversion loss due to reflected light.
    Type: Grant
    Filed: July 8, 1988
    Date of Patent: April 10, 1990
    Assignee: Hitachi, Ltd.
    Inventors: Tsuyoshi Uematsu, Tadashi Saitoh, Yasuhiro Kida