Patents by Inventor Tupei Chen

Tupei Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10490745
    Abstract: Methods of forming planar RRAM and vertical RRAM with tip electrodes and the resulting devices are provided. Embodiments include forming a first metal oxide layer on a first dielectric layer; forming and patterning a mask layer over the first metal oxide layer; etching the first metal oxide through the mask layer to form openings for a first and second metal electrodes; removing the mask layer; forming the first and second metal electrodes in the openings; and forming a second metal oxide layer over the first and second metal electrodes, wherein the first and second metal electrodes are v-shaped in top view with tips of the first and second metal electrodes facing each other and a portion of the second metal oxide layer being formed between the tips of the first and second electrodes.
    Type: Grant
    Filed: March 14, 2018
    Date of Patent: November 26, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Jianxun Sun, Juan Boon Tan, Kwang Sing Yew, Wanbing Yi, Curtis Chun-I Hsieh, Tupei Chen
  • Publication number: 20190288201
    Abstract: Methods of forming planar RRAM and vertical RRAM with tip electrodes and the resulting devices are provided. Embodiments include forming a first metal oxide layer on a first dielectric layer; forming and patterning a mask layer over the first metal oxide layer; etching the first metal oxide through the mask layer to form openings for a first and second metal electrodes; removing the mask layer; forming the first and second metal electrodes in the openings; and forming a second metal oxide layer over the first and second metal electrodes, wherein the first and second metal electrodes are v-shaped in top view with tips of the first and second metal electrodes facing each other and a portion of the second metal oxide layer being formed between the tips of the first and second electrodes.
    Type: Application
    Filed: March 14, 2018
    Publication date: September 19, 2019
    Inventors: Jianxun SUN, Juan Boon TAN, Kwang Sing YEW, Wanbing YI, Curtis Chun-I HSIEH, Tupei CHEN
  • Patent number: 7132878
    Abstract: This invention provides a circuit and a method for generating a low-level current using semiconductor charge pumping. The invention provides a means of generating a range of current sources by varying the frequency of a repetitive voltage pulse input signal. Also, this invention utilizes one or many MOSFET devices in order to produce higher levels of current. The current source embodiments of this invention generate very stable current sources with high input impedances.
    Type: Grant
    Filed: November 18, 2004
    Date of Patent: November 7, 2006
    Assignee: Chartered Semiconductor Manufacturing Ltd.
    Inventors: Tupei Chen, Chew-Hoe Ang, Shyue-Seng Tan, Jia-Zhen Zheng
  • Publication number: 20060231889
    Abstract: A two-terminal memory device based on semiconductor (such as Si or Ge) or metal (such as Al or Au) nanocrystals and/or nanoparticles is described wherein each device has a substrate, a dielectric layer (such as SiO2 or organic dielectric materials) nanocrystals and/or nanoparticles distributed throughout the dielectric layer, and a metal (or poly-crystalline Si, or conductive organic materials) gate electrode. The memory states of the device are distinguished by charging and discharging the nanocrystals and/or nanoparticles. This two-terminal memory device is much simpler than the conventional four-terminal MOSFET-based memory device in terms of device structure and fabrication process. In addition, it is flexible if the memory devices are fabricated on flexible substrate with organic materials.
    Type: Application
    Filed: April 13, 2005
    Publication date: October 19, 2006
    Inventors: Tupei Chen, Yang Liu, Chi Ng, Man Tse
  • Publication number: 20060103450
    Abstract: This invention provides a circuit and a method for generating a low-level current using semiconductor charge pumping. The invention provides a means of generating a range of current sources by varying the frequency of a repetitive voltage pulse input signal. Also, this invention utilizes one or many MOSFET devices in order to produce higher levels of current. The current source embodiments of this invention generate very stable current sources with high input impedances.
    Type: Application
    Filed: November 18, 2004
    Publication date: May 18, 2006
    Inventors: Tupei Chen, Chew-Hoe Ang, Shyue-Seng Tan, Jia-Zhen Zheng