Patents by Inventor Tyagamohan Gottipati

Tyagamohan Gottipati has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7118967
    Abstract: A method of protecting a charge trapping dielectric flash memory cell from UV-induced charging, including fabricating a charge trapping dielectric flash memory cell including a charge trapping dielectric charge storage layer in a semiconductor device; and during processing steps subsequent to formation of the charge trapping dielectric charge storage layer, protecting the charge trapping dielectric flash memory cell from exposure to a level of UV radiation sufficient to deposit a non-erasable charge in the charge trapping dielectric flash memory cell. In one embodiment, the step of protecting is carried out by selecting processes in BEOL fabrication which do not include use, generation or exposure of the semiconductor device to a level of UV radiation sufficient to deposit the non-erasable charge.
    Type: Grant
    Filed: February 19, 2003
    Date of Patent: October 10, 2006
    Assignee: Spansion, LLC
    Inventors: Minh V. Ngo, Ning Cheng, Jeff P. Erhardt, Clarence B. Ferguson, Cyrus Tabery, John Caffall, Tyagamohan Gottipati, Dawn Hopper
  • Patent number: 7023046
    Abstract: Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 ? to 600 ?, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.
    Type: Grant
    Filed: July 11, 2003
    Date of Patent: April 4, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Minh Van Ngo, Angela Hui, Ning Cheng, Jeyong Park, Jean Yee-Mei Yang, Robert A. Huertas, Tazrien Kamal, Pei-Yuan Gao, Tyagamohan Gottipati
  • Patent number: 7018896
    Abstract: A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. In one embodiment, the device includes a substantially UV-opaque sub-layer of a contact cap layer or a substantially UV-opaque contact cap layer.
    Type: Grant
    Filed: April 5, 2004
    Date of Patent: March 28, 2006
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Minh V. Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park, Ning Cheng, Jeff P. Erhardt, Clarence B. Ferguson, Jeffrey A. Shields, Angela T. Hui, Robert A. Huertas, Tyagamohan Gottipati
  • Publication number: 20050006693
    Abstract: Semiconductor devices with improved data retention are formed by depositing an undoped oxide liner on spaced apart transistors followed by in situ deposition of a BPSG layer. Embodiments include depositing an undoped silicon oxide liner derived from TEOS, as at a thickness of 400 ? to 600 ?, on transistors of a non-volatile semiconductor device, as by sub-atmospheric chemical vapor deposition, followed by depositing the BPSG layer in the same deposition chamber.
    Type: Application
    Filed: July 11, 2003
    Publication date: January 13, 2005
    Inventors: Minh Ngo, Angela Hui, Ning Cheng, Jeyong Park, Jean Yang, Robert Huertas, Tazrien Kamal, Pei-Yuan Gao, Tyagamohan Gottipati
  • Patent number: 6809402
    Abstract: Device leakage due to spacer undercutting is remedied by depositing a B-doped HDP or a BP-doped HDP oxide gap filling layer capable of flowing into undercut regions. Embodiments include depositing a B or BP-doped HDP oxide film containing 4 to 6 wt. % B over closely spaced apart non-volatile transistors and heating during and subsequent to deposition to complete flowing of the B- or BP-HDP oxide into and filling the undercut regions on the sidewall spacers and to densify the B- or BP-HDP oxide.
    Type: Grant
    Filed: August 14, 2002
    Date of Patent: October 26, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Dawn Hopper, Minh Van Ngo, Atul Gupta, Tyagamohan Gottipati, John Caffall
  • Publication number: 20040191989
    Abstract: A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. In one embodiment, the device includes a substantially UV-opaque sub-layer of a contact cap layer or a substantially UV-opaque contact cap layer.
    Type: Application
    Filed: April 5, 2004
    Publication date: September 30, 2004
    Inventors: Minh V. Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park, Ning Cheng, Jeff P. Erhardt, Clarence B. Ferguson, Jeffrey A. Shields, Angela T. Hui, Robert A. Huertas, Tyagamohan Gottipati
  • Patent number: 6774432
    Abstract: A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. A SONOS flash memory device, including a SONOS flash memory cell; and at least one UV-protective layer, in which the UV-protective layer comprises a substantially UV-opaque material, is provided. In one embodiment, the device includes a substantially UV-opaque contact cap layer.
    Type: Grant
    Filed: February 5, 2003
    Date of Patent: August 10, 2004
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Minh V. Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park, Ning Cheng, Jeff P. Erhardt, Clarence B. Ferguson, Jeffrey A. Shields, Angela T. Hui, Robert A. Huertas, Tyagamohan Gottipati
  • Publication number: 20040151025
    Abstract: A method of protecting a SONOS flash memory cell from UV-induced charging, including fabricating a SONOS flash memory cell in a semiconductor device; and depositing over the SONOS flash memory cell at least one UV-protective layer, the UV-protective layer including a substantially UV-opaque material. A SONOS flash memory device, including a SONOS flash memory cell; and at least one UV-protective layer, in which the UV-protective layer comprises a substantially UV-opaque material, is provided. In one embodiment, the device includes a substantially UV-opaque contact cap layer.
    Type: Application
    Filed: February 5, 2003
    Publication date: August 5, 2004
    Inventors: Minh V. Ngo, Tazrien Kamal, Mark T. Ramsbey, Arvind Halliyal, Jaeyong Park, Ning Cheng, Jeff P. Erhardt, Clarence B. Ferguson, Jeffrey A. Shields, Angela T. Hui, Robert A. Huertas, Tyagamohan Gottipati
  • Patent number: 6613657
    Abstract: Device leakage due to spacer undercutting is remedied by depositing a BPSG, SA-CVD oxide liner and flowing it into the undercut regions, followed by gap filling with a P-doped HDP oxide layer. Embodiments include depositing a BPSG, SA-CVD oxide liner containing 4 to 6 wt.% boron, at a thickness of 1,000 Å to 1,800 Å, over closely spaced apart non-volatile transistors and heating during or subsequent to deposition to flow the BPSG, SA-CVD oxide liner into the undercut regions of the sidewall spacers of the gate stacks. Gap filling is then completed by depositing the layer of P-doped HDP at a thickness of 6,000 Å to 10,000 Å.
    Type: Grant
    Filed: August 30, 2002
    Date of Patent: September 2, 2003
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Minh Van Ngo, Dawn Hopper, Wenmei Li, Kelwin King Wai Ko, Kuo-Tung Chang, Tyagamohan Gottipati