Abstract: A chalcogenide material and chalcogenide memory device having less stringent requirements for formation, improved thermal stability and/or faster operation. The chalcogenide materials include materials comprising Ge, Sb and Te in which the Ge and/or Te content is lean relative to the commonly used Ge2Sb2Te5 chalcogenide composition. Electrical devices containing the instant chalcogenide materials show a rapid convergence of the set resistance during cycles of setting and resetting the device from its as-fabricated state, thus leading to a reduced or eliminated need to subject the device to post-fabrication electrical formation prior to end-use operation. Improved thermal stability is manifested in terms of prolonged stability of the resistance of the device at elevated temperatures, which leads to an inhibition of thermally induced setting of the reset state in the device. Significant improvements in the 10 year data retention temperature are demonstrated.

Abstract: Identification information is wirelessly communicated between radio frequency devices. In one embodiment, a first wireless device transmits a signal to request identification information. Other wireless devices are each affixed a respective item, and each of the other wireless devices determines if a reply signal is to be transmitted, and if so, communicates the reply signal to the first wireless device.

Abstract: A memory employs a low-level current source to access a phase change memory cell. The current source charges an access capacitor in order to store sufficient charge for an ensuing access. When a memory cell is accessed, charge stored on the capacitor is discharged through the phase change memory, supplying a current to the phase change memory cell that is sufficient for the intended access operation and greater than that provided directly by the current source.

Abstract: In one embodiment, a method includes transmitting a signal from a wireless transmitter to a radio frequency (RF) device of a plurality of RF devices within a communication range of the transmitter. The signal is to select a group of the RF devices. A reply signal is received from each RF device if the respective RF device determines that it is a member of the group.

Abstract: A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on the chip; storing information about said electronic circuit in the phase-change memory. A method of operating an optical display.

Abstract: A multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. In one embodiment, the pore region includes two or more chalcogenide materials which differ in chemical composition. In another embodiment, the pore region includes one or more chalcogenide materials and a layer of Sb. The devices offer the advantages of minimal conditioning requirements, fast set speeds, high reset resistances and low set resistances.

Abstract: A three-dimensional phase-change memory array. In one embodiment of the invention, the memory array includes a first plurality of diodes, a second plurality of diodes disposed above the first plurality of diodes, a first plurality phase-change memory elements disposed above the first and second plurality of diodes and a second plurality of memory elements disposed above the first plurality of memory elements.

Abstract: An electronic device and method of programming for binary and multilevel memory operation. The active material of the device is a phase-change material. The method includes utilization of the pulse duration of electrical pulses as a programming variable to program a phase-change device to two or more memory states that differ in the relative proportion and/or spatial arrangement of crystalline and amorphous phase regions. Pulse width programming, in conjunction with a device electrical contact having a resistivity within a particular range, enables fine control over the crystalline-amorphous phase-change process by facilitating control over the spatial distribution of thermal energy produced by Joule heating. The degree of control over the phase-change process enables reliable multilevel memory operation by providing for reproducible programming of memory states that are well-resolved in both resistance and programming variable.

Abstract: A memory includes a programmable resistance array with high ratio of dynamic range to drift coefficient phase change memory devices.

Abstract: A memory device includes a first electrode and a second electrode. A phase-change material is disposed between the first and second electrodes. The phase-change material is in electrical communication with the first and second electrodes at a first contact region and a second contact region respectively. The first and second contact regions are similar in contact area. The device enables scaling of reset current to smaller dimensions without encountering a limitation imposed by an offset current.

Abstract: A chalcogenide alloy that optimizes operating parameters of an ovonic threshold switch includes an atomic percentage of arsenic in the range of 9 to 39, an atomic percentage of germanium in the range of 10 and 40, an atomic percentage of silicon in the range of 5 and 18, an atomic percentage of nitrogen in the range of 0 and 10, and an alloy of sulfur, selenium, and tellurium. A ratio of sulfur to selenium in the range of 0.25 and 4, and a ration of sulfur to tellurium in the alloy of sulfur, selenium, and tellurium is in the range of 0.11 and 1.

Abstract: A radial memory device includes a phase-change material, a first electrode in electrical communication with the phase-change material, the first electrode having a first area of electrical communication with the phase-change material. A second electrode in electrical communication with the phase-change material, the second electrode having a second area of electrical communication with the phase-change material, and the second area being laterally spacedly disposed from the first area. Additionally, the radial memory device includes a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer having an opening therethrough, the phase-change material being disposed in the opening, wherein the phase-change material is disposed at least partially above the second electrode. Further, a method of making a memory device is disclosed.

Abstract: A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.

Abstract: A memory includes a programmable resistance array and unipolar MOS peripheral circuitry. The peripheral circuitry includes address decoding circuitry. Because unipolar MOS circuitry is employed, the number of mask steps and, concomitantly, the cost of the programmable resistance memory may be minimized.

Abstract: A non-volatile memory element comprising a bottom electrode 12, a top electrode 17 provided on the bottom electrode 12, and a recording layer 18 containing phase change material connected between the bottom electrode 12 and the top electrode 17. In accordance with this invention, the top electrode 17 is in contact with a growth initiation surface 18a of the recording layer 17. This structure can be obtained by forming the top electrode 17 before the recording layer 18, resulting in a three-dimensional structure. This decreases heat dissipation to the bit line without increasing the thickness of the recording layer 18.

Abstract: A method of customizing an integrated circuit chip, comprising the steps of: providing an electronic circuit on said chip; providing a phase-change memory on the chip; storing information about said electronic circuit in the phase-change memory. A method of operating an optical display.

Abstract: A method of programming an electrical variable resistance memory device. When applied to variable resistance memory devices that incorporate a phase-change material as the active material, the method utilizes a plurality of crystalline programming states. The crystalline programming states are distinguishable on the basis of resistance, where the resistance values of the different states are stable with time and exhibit little or no drift. As a result, the programming scheme is particularly suited to multilevel memory applications. The crystalline programming states may be achieved by stabilizing crystalline phases that adopt different crystallographic structures or by stabilizing crystalline phases that include mixtures of two or more distinct crystallographic structures that vary in the relative proportions of the different crystallographic structures.

Abstract: A memory employs a low-level current source to access a phase change memory cell. The current source charges an access capacitor in order to store sufficient charge for an ensuing access. When a memory cell is accessed, charge stored on the capacitor is discharged through the phase change memory, supplying a current to the phase change memory cell that is sufficient for the intended access operation and greater than that provided directly by the current source.

Abstract: A carbon containing layer may be formed between a pair of chalcogenide containing layers of a phase change memory. When the lower chalcogenide layer allows current to pass, a filament may be formed therein. The filament then localizes the electrical heating of the carbon containing layer, converting a relatively localized region to a lower conductivity region. This region then causes the localization of heating and current flow through the upper phase change material layer. In some embodiments, less phase change material may be required to change phase to form a phase change memory, reducing the current requirements of the resulting phase change memory.

Abstract: A memory element, a threshold switching element, or the series combination of a memory element and a threshold switching element may be used for coupling conductive lines in an electrically programmable matrix array. Leakage may be reduced by optionally placing a breakdown layer in series with the phase-change material and/or threshold switching material between the conductive lines. The matrix array may be used in a programmable logic device.