Patents by Inventor Tyler Sherwood

Tyler Sherwood has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11573452
    Abstract: Processing methods may be performed to forming a pixel material in a semiconductor structure. The methods may include forming a sacrificial hardmask overlying an uppermost layer of an optical stack of the semiconductor structure, the uppermost layer having a thickness. The methods may include forming a via through the sacrificial hardmask in the optical stack by a first etch process unselective to a metal layer of the semiconductor structure. The methods may include filling the via with a fill material, wherein a portion of the fill material extends over the sacrificial hardmask and contacts the metal layer. The methods may include removing a portion of the fill material external to the via by a removal process selective to the fill material. The methods may also include removing the sacrificial hardmask by a second etch process selective to the sacrificial hardmask while maintaining the thickness of the uppermost layer.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: February 7, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan
  • Publication number: 20220310531
    Abstract: Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 29, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Amirhasan Nourbakhsh, Lan Yu, Joseph F. Salfelder, Ki Cheol Ahn, Tyler Sherwood, Siddarth Krishnan, Michael Jason Fronckowiak, Xing Chen
  • Patent number: 11456171
    Abstract: Exemplary methods of forming a semiconductor structure may include forming a liner along sidewalls of a trench defined from a first surface of a semiconductor substrate. The liner may extend along the first surface of the semiconductor substrate. The methods may include filling the trench with a dielectric material. The methods may include removing the dielectric material and the liner from the first surface of the semiconductor substrate. The methods may include forming a layer of the liner across the first surface of the semiconductor substrate and the trench defined within the semiconductor substrate.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: September 27, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Lan Yu, Tyler Sherwood
  • Publication number: 20220254886
    Abstract: Exemplary methods of forming a semiconductor structure may include forming a doped silicon layer on a semiconductor substrate. A level of doping may be increased at an increasing distance from the semiconductor substrate. The methods may include etching the doped silicon layer to define a trench extending to the semiconductor substrate. The doped silicon layer may define a sloping sidewall of the trench. The trench may be characterized by a depth of greater than or about 30 ?m. The methods may include lining the trench with a first oxide material. The methods may include depositing a second oxide material within the trench. The methods may include forming a contact to produce a power device.
    Type: Application
    Filed: February 8, 2021
    Publication date: August 11, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Ashish Pal, El Mehdi Bazizi, Siddarth Krishnan, Xing Chen, Lan Yu, Tyler Sherwood
  • Patent number: 11410873
    Abstract: Exemplary methods of forming a semiconductor device may include etching a trench from a first surface of a semiconductor substrate to a first depth within the semiconductor substrate. The trench may be characterized by a first width through the first depth. The methods may include forming a liner along sidewalls of the trench. The methods may include etching the trench to a second depth at least ten times greater than the first depth. The trench may be characterized by a second width through the second depth. The methods may include filling the trench with a dielectric material. A seam formed in the dielectric material may be maintained below the first depth.
    Type: Grant
    Filed: November 20, 2020
    Date of Patent: August 9, 2022
    Assignee: Applied Materials, Inc.
    Inventors: Lan Yu, Tyler Sherwood, Michael Chudzik, Siddarth Krishnan
  • Publication number: 20220223402
    Abstract: Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.
    Type: Application
    Filed: January 14, 2021
    Publication date: July 14, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan, Joseph Salfelder
  • Publication number: 20220165574
    Abstract: Exemplary methods of forming a semiconductor structure may include forming a layer of metal on a semiconductor substrate. The layer of metal may extend along a first surface of the semiconductor substrate. The semiconductor substrate may be or include silicon. The methods may include performing an anneal to produce a metal silicide. The methods may include implanting ions in the metal silicide to increase a barrier height over 0.65 V.
    Type: Application
    Filed: November 23, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Joshua S. Holt, Lan Yu, Tyler Sherwood, Archana Kumar, Nicolas Louis Gabriel Breil, Siddarth Krishnan
  • Publication number: 20220163834
    Abstract: Processing methods may be performed to form a pixel isolation structure on a semiconductor substrate. The method may include forming a pixel isolation bilayer on the semiconductor substrate. The pixel isolation bilayer may include a high-k layer overlying a stopping layer. The method may include forming a lithographic mask on a first region of the pixel isolation bilayer. The method may also include etching the pixel isolation bilayer external to the first region. The etching may reveal the semiconductor substrate. The etching may form the pixel isolation structure.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Zihao Yang
  • Publication number: 20220165610
    Abstract: Exemplary methods of forming a semiconductor device may include etching a trench from a first surface of a semiconductor substrate to a first depth within the semiconductor substrate. The trench may be characterized by a first width through the first depth. The methods may include forming a liner along sidewalls of the trench. The methods may include etching the trench to a second depth at least ten times greater than the first depth. The trench may be characterized by a second width through the second depth. The methods may include filling the trench with a dielectric material. A seam formed in the dielectric material may be maintained below the first depth.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Tyler Sherwood, Michael Chudzik, Siddarth Krishnan
  • Publication number: 20220165564
    Abstract: Exemplary methods of forming a semiconductor structure may include forming a liner along sidewalls of a trench defined from a first surface of a semiconductor substrate. The liner may extend along the first surface of the semiconductor substrate. The methods may include filling the trench with a dielectric material. The methods may include removing the dielectric material and the liner from the first surface of the semiconductor substrate. The methods may include forming a layer of the liner across the first surface of the semiconductor substrate and the trench defined within the semiconductor substrate.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Tyler Sherwood
  • Publication number: 20220163707
    Abstract: Processing methods may be performed to form a grounded mirror structure on a semiconductor substrate. The methods may include revealing a metal layer. The metal layer may underlie a spacer layer. The metal layer may be revealed by a dry etch process. The method may include forming a mirror layer overlying the spacer layer and the metal layer. The mirror layer may contact the metal layer. The method may also include forming an oxide inclusion overlying a portion of the mirror layer. The portion of the mirror layer may be external to the spacer layer.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan
  • Publication number: 20220163845
    Abstract: Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan
  • Publication number: 20220165912
    Abstract: Processing methods may be performed to form a pixel material in a semiconductor substrate. The methods may include forming a lithographic mask overlying the semiconductor substrate. The lithographic mask may include a window. The method may include forming a via in the semiconductor substrate by a dry etch process through the window. The method may also include forming the pixel material by depositing a fill material in the via.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan
  • Publication number: 20220163846
    Abstract: Processing methods may be performed to forming a pixel material in a semiconductor structure. The methods may include forming a sacrificial hardmask overlying an uppermost layer of an optical stack of the semiconductor structure, the uppermost layer having a thickness. The methods may include forming a via through the sacrificial hardmask in the optical stack by a first etch process unselective to a metal layer of the semiconductor structure. The methods may include filling the via with a fill material, wherein a portion of the fill material extends over the sacrificial hardmask and contacts the metal layer. The methods may include removing a portion of the fill material external to the via by a removal process selective to the fill material. The methods may also include removing the sacrificial hardmask by a second etch process selective to the sacrificial hardmask while maintaining the thickness of the uppermost layer.
    Type: Application
    Filed: November 20, 2020
    Publication date: May 26, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Lan Yu, Benjamin D. Briggs, Tyler Sherwood, Raghav Sreenivasan