Abstract: A living organism image monitoring system is provided, relating to the technical field of medical equipment. The living organism image monitoring system comprises a display module, a processor and a CIGS chip, the CIGS chip, the processor and the display module being electrically connected, the CIGS chip being used for detecting a near infrared light signal of a living organism and generating a current signal after having detected the near infrared light signal, the processor being used for generating a first pulse signal according to the current signal, and the display module being used for displaying an image according to the first pulse signal. The living organism image monitoring system provided by the present disclosure has the advantages of being capable of synchronously transmitting the images of a living organism to the display module for display and enabling the images to be clearer.

Abstract: A 3D depth image acquiring method and apparatus, and an image acquisition device are provided. The method is applied to an image acquisition device comprising a VIS-NIR picture sensor and an infrared structured light projection component. The VIS-NIR picture sensor comprises a plurality of dot matrix units each having a blue light photosensitive component, a green light photosensitive component, a red light photosensitive component and an NIR photosensitive component distributed thereon. The method comprises: controlling the blue light photosensitive component, the green light photosensitive component, the red light photosensitive component, the NIR photosensitive component and the infrared structured light projection component to operate, to obtain an optimum NIR image and an optimum VIS image; and processing the optimum VIS image and a depth image which is obtained by performing calculation on the optimum NIR image using a 3D depth mode, to obtain a 3D depth image.

Abstract: Disclosed are a CMOS image sensor encapsulation structure and a method for manufacturing the same, including the steps of: firstly, a transparent substrate material is fixed to a surface of a first insulating layer having a micro convex lens, a dummy wafer is fixed on a surface of the transparent substrate material, and then a wafer is thinned by grinding, and in this process, the transparent substrate material provides more mechanical support force for the wafer, therefore, the wafer can become thinner by grinding, thus the CMOS image sensor encapsulation structure is characterized by being formed in a thin shape. Besides, a second installation area has a protection glue layer which can prevent oxygen and moisture from entering internal elements and absorb scattered light.

Abstract: A CMOS image sensor encapsulation structure and its manufacturing method, including: forming a blind hole in a combined layer formed by a first insulating layer and a wafer, a surface of the first insulating layer facing away from the wafer having a micro convex lens; forming a second insulating layer on a hole wall of the blind hole, then filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer in signal connection with the micro convex lens and an IC extend to a surface of the first insulating layer and electrically connecting the conductor to the electrically conductive material; fixing the transparent substrate material on a surface of the first insulating layer having the micro convex lens, forming a dummy wafer on a surface of the transparent substrate material, and then thinning the wafer by grinding.

Abstract: A 3D depth image acquiring method and apparatus, and an image acquisition device are provided. The method is applied to an image acquisition device comprising a VIS-NIR picture sensor and an infrared structured light projection component. The VIS-NIR picture sensor comprises a plurality of dot matrix units each having a blue light photosensitive component, a green light photosensitive component, a red light photosensitive component and an NIR photosensitive component distributed thereon. The method comprises: controlling the blue light photosensitive component, the green light photosensitive component, the red light photosensitive component, the NIR photosensitive component and the infrared structured light projection component to operate, to obtain an optimum NIR image and an optimum VIS image; and processing the optimum VIS image and a depth image which is obtained by performing calculation on the optimum NIR image using a 3D depth mode, to obtain a 3D depth image.

Abstract: A living organism image monitoring system is provided, relating to the technical field of medical equipment. The living organism image monitoring system comprises a display module, a processor and a CIGS chip, the CIGS chip, the processor and the display module being electrically connected, the CIGS chip being used for detecting a near infrared light signal of a living organism and generating a current signal after having detected the near infrared light signal, the processor being used for generating a first pulse signal according to the current signal, and the display module being used for displaying an image according to the first pulse signal. The living organism image monitoring system provided by the present disclosure has the advantages of being capable of synchronously transmitting the images of a living organism to the display module for display and enabling the images to be clearer.

Abstract: Disclosed are a CMOS image sensor encapsulation structure and a method for manufacturing the same, including the steps of: firstly, a transparent substrate material is fixed to a surface of a first insulating layer having a micro convex lens, a dummy wafer is fixed on a surface of the transparent substrate material, and then a wafer is thinned by grinding, and in this process, the transparent substrate material provides more mechanical support force for the wafer, therefore, the wafer can become thinner by grinding, thus the CMOS image sensor encapsulation structure is characterized by being formed in a thin shape. Besides, a second installation area has a protection glue layer which can prevent oxygen and moisture from entering internal elements and absorb scattered light.

Abstract: A CMOS image sensor encapsulation structure and its manufacturing method, including : forming a blind hole in a combined layer formed by a first insulating layer and a wafer, a surface of the first insulating layer facing away from the wafer having a micro convex lens; forming a second insulating layer on a hole wall of the blind hole, then filling an electrically conductive material in the blind hole having the second insulating layer, and making a conductor in the combined layer in signal connection with the micro convex lens and an IC extend to a surface of the first insulating layer and electrically connecting the conductor to the electrically conductive material; fixing the transparent substrate material on a surface of the first insulating layer having the micro convex lens, forming a dummy wafer on a surface of the transparent substrate material, and then thinning the wafer by grinding.

Abstract: A solar module includes a solar panel and a wireless power transmission module coupled to the solar panel for transmitting power generated by the solar panel wirelessly.

Abstract: A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacers. The absorber layer is partially in contact with the spacers and partially in direct contact with the back contact layer. The solar cell substrate is heated to form voids between the absorber layer and the back contact layer at the locations of the spacers.

Abstract: A method and apparatus for measuring thickness of a film in a solar cell provides for directing light emitted at multiple emission wavelengths, to a surface of the solar cell. Each emission results in the generation of a responsive photo current. The photo currents are read by a current meter having one contact coupled to a surface of the solar cell and another contact coupled to another surface. The currents associated with each of the different light emissions are identified and the thickness of a film in the solar cell is calculated based on the two currents or associated quantum efficiencies, and associated absorption coefficients. In one embodiment, the film thickness is the thickness of a CdS or other buffer film in a thin film solar cell.

Abstract: A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over the absorber layer, forming a front transparent layer over the buffer layer, and exposing the photovoltaic device to heat or radiation at a temperature from about 80° C. to about 500° C. for a period of time, subsequent to the step of forming a buffer layer over the absorber layer.

Abstract: A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacers. The absorber layer is partially in contact with the spacers and partially in direct contact with the back contact layer. The solar cell substrate is heated to form voids between the absorber layer and the back contact layer at the locations of the spacers.

Abstract: A method includes depositing spacers at a plurality of locations directly on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacers. The absorber layer is partially in contact with the spacers and partially in direct contact with the back contact layer. The solar cell substrate is heated to form voids between the absorber layer and the back contact layer at the locations of the spacers.

Abstract: A solar cell has a first back contact and a first absorber over the first back contact. The first absorber has a scribe line through it. A first front contact is provided over the first absorber. A first conductive material is provided over a portion of the first front contact. The first conductive material extends through the scribe line and connects to a second back contact of a second solar cell.

Abstract: A solar cell includes a back contact layer, an absorber layer above the back contact layer, a dielectric layer above the absorber layer, and a front contact layer above the dielectric layer.

Abstract: A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination.

Abstract: Provided is a method for identifying material junctions and doping characteristics in semiconductor and other materials by illuminating the material and measuring voltage. A correlation between penetration depth of light and wavelength of light is established for a material. Photons are applied to materials such as semiconductor materials to induce charge. The photons are applied by exposing the material to light having a range of wavelengths. The induced charge results in a measureable voltage. The voltage is measured and the voltage measurements used to determine a junction depth and charge concentration of a material using the correlation between penetration depth of light and wavelength of light.

Abstract: Provided is a method for identifying material junctions and doping characteristics in semiconductor and other materials by illuminating the material and measuring voltage. A correlation between penetration depth of light and wavelength of light is established for a material. Photons are applied to materials such as semiconductor materials to induce charge. The photons are applied by exposing the material to light having a range of wavelengths. The induced charge results in a measurable voltage. The voltage is measured and the voltage measurements used to determine a junction depth and charge concentration of a material using the correlation between penetration depth of light and wavelength of light.

Abstract: A solar module includes a solar panel and a wireless power transmission module coupled to the solar panel for transmitting power generated by the solar panel wirelessly.