Patents by Inventor Tzu-Jui WANG
Tzu-Jui WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9064986Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.Type: GrantFiled: September 13, 2013Date of Patent: June 23, 2015Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Yuichiro Yamashita, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 9029183Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.Type: GrantFiled: March 11, 2014Date of Patent: May 12, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Tzu-Jui Wang, Dun-Nian Yaung, Jen-Cheng Liu
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Publication number: 20150079718Abstract: A device includes a first chip including an image sensor therein, and a second chip bonded to the first chip. The second chip includes a logic device selected from the group consisting essentially of a reset transistor, a selector, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit.Type: ApplicationFiled: November 21, 2014Publication date: March 19, 2015Inventors: Szu-Ying Chen, Meng-Hsun Wan, Tzu-Jui Wang, Dun-Nian Yaung, Jen-Cheng Liu
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Publication number: 20150076637Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.Type: ApplicationFiled: September 13, 2013Publication date: March 19, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, YUICHIRO YAMASHITA, JEN-CHENG LIU, DUN-NIAN YAUNG
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Publication number: 20150061061Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: ApplicationFiled: August 30, 2013Publication date: March 5, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Publication number: 20140264698Abstract: A system and method for blocking heat from reaching an image sensor in a three dimensional stack with a semiconductor device. In an embodiment a heat sink is formed in a back end of line process either on the semiconductor device or else on the image sensor itself when the image sensor is in a backside illuminated configuration. The heat sink may be a grid in either a single layer or in two layers, a zig-zag pattern, or in an interleaved fingers configuration.Type: ApplicationFiled: June 27, 2013Publication date: September 18, 2014Inventors: Kuo-Chin Huang, Tzu-Jui Wang, Szu-Ying Chen, Dun-Nian Yaung, Jen-Cheng Liu, Bruce C.S. Chou, Jung-Kuo Tu, Cheng-Chieh Hsieh
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Publication number: 20140193940Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.Type: ApplicationFiled: March 11, 2014Publication date: July 10, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Szu-Ying Chen, Tzu-Jui Wang, Dun-Nian Yaung, Jen-Cheng Liu
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Patent number: 8710607Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.Type: GrantFiled: July 12, 2012Date of Patent: April 29, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Tzu-Jui Wang, Dun-Nian Yaung, Jen-Cheng Liu
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Publication number: 20140113398Abstract: A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.Type: ApplicationFiled: December 20, 2013Publication date: April 24, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Jui Wang, Szu-Ying Chen, Jen-Cheng Liu, Dun-Nian Yaung, Ping-Yin Liu, Lan-Lin Chao
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Publication number: 20140015084Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.Type: ApplicationFiled: July 12, 2012Publication date: January 16, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Szu-Ying Chen, Tzu-Jui Wang, Dun-Nian Yaung, Jen-Cheng Liu
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Patent number: 8629524Abstract: A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.Type: GrantFiled: April 27, 2012Date of Patent: January 14, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Jui Wang, Szu-Ying Chen, Jen-Cheng Liu, Dun-Nian Yaung, Ping-Yin Liu, Lan-Lin Chao
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Publication number: 20130334638Abstract: A backside illuminated image sensor comprises a photodiode and a first transistor located in a first substrate, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a plurality of logic circuits formed in a second substrate, wherein the second substrate is stacked on the first substrate and the logic circuit are coupled to the first transistor through a plurality of bonding pads.Type: ApplicationFiled: June 15, 2012Publication date: December 19, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Tzu-Jui Wang, Jen-Cheng Liu, Dun-Nian Yaung, Ping-Yin Liu, Lan-Lin Chao
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Publication number: 20130320194Abstract: A device includes a first chip including an image sensor therein, and a second chip bonded to the first chip. The second chip includes a logic device selected from the group consisting essentially of a reset transistor, a selector, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit.Type: ApplicationFiled: June 1, 2012Publication date: December 5, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Szu-Ying Chen, Meng-Hsun Wan, Tzu-Jui Wang, Dun-Nian Yaung, Jen-Cheng Liu
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Publication number: 20130285180Abstract: A backside illuminated image sensor comprises a photodiode and a first transistor located in a first chip, wherein the first transistor is electrically coupled to the photodiode. The backside illuminated image sensor further comprises a second transistor formed in a second chip and a plurality of logic circuits formed in a third chip, wherein the second chip is stacked on the first chip and the third chip is stacked on the second chip. The logic circuit, the second transistor and the first transistor are coupled to each other through a plurality of boding pads and through vias.Type: ApplicationFiled: April 27, 2012Publication date: October 31, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Jui Wang, Szu-Ying Chen, Jen-Cheng Liu, Dun-Nian Yaung, Ping-Yin Liu, Lan-Lin Chao
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Publication number: 20130284885Abstract: Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a sensor device with an application specific integrated circuit (ASIC) are disclosed. According to an embodiment, a sensor device may be bonded together face-to-face with an ASIC without using a carrier wafer, where corresponding bond pads of the sensor are aligned with bond pads of the ASIC and bonded together, in a one-to-one fashion. A column of pixels of the sensor may share a bond bad connected by a shared inter-metal line. The bond pads may be of different sizes and configured in different rows to be disjoint from each other. Additional dummy pads may be added to increase the bonding between the sensor and the ASIC.Type: ApplicationFiled: April 27, 2012Publication date: October 31, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Szu-Ying Chen, Ping-Yin Liu, Calvin Yi-Ping Chao, Tzu-Jui Wang, Jen-Cheng Liu, Dun-Nian Yaung, Lan-Lin Chao
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Patent number: 8513587Abstract: An image sensor the image sensor comprising an absorption layer disposed on a silicon substrate, the absorption layer having at least one of SiGe or Ge, and an antireflection layer disposed directly thereon.Type: GrantFiled: January 24, 2011Date of Patent: August 20, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Jui Wang, Hsiao-Hui Tseng, Wei-Cheng Hsu, Dun-Nian Yaung, Jen-Cheng Liu
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Publication number: 20130032912Abstract: A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material, and a second portion underlying the dielectric material.Type: ApplicationFiled: August 4, 2011Publication date: February 7, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Szu-Ying Chen, Tzu-Jui Wang, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20120187282Abstract: An image sensor the image sensor comprising an absorption layer disposed on a silicon substrate, the absorption layer having at least one of SiGe or Ge, and an antireflection layer disposed directly thereon.Type: ApplicationFiled: January 24, 2011Publication date: July 26, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tzu-Jui WANG, Hsiao-Hui TSENG, Wei-Cheng HSU, Dun-Nian YAUNG, Jen-Cheng LIU