Patents by Inventor Tzu-Yi CHI

Tzu-Yi CHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10818818
    Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.
    Type: Grant
    Filed: November 20, 2018
    Date of Patent: October 27, 2020
    Assignee: EPISTAR CORPORATION
    Inventors: Tzu-Chieh Hu, Wei-Chieh Lien, Chen Ou, Chia-Ming Liu, Tzu-Yi Chi
  • Publication number: 20190165204
    Abstract: A semiconductor device includes: a first semiconductor region; and a first electrode on the first semiconductor region; wherein first semiconductor region includes a first layer and a second layer, the second layer includes a first portion and a second portion adjacent to the first portion, the first portion has a first thickness, the second portion has a second thickness less than the first thickness, the first layer includes a first material and a first dopant, the first material includes multiple elements, the first dopant has a first concentration, the second layer includes a second material and a second dopant, the second material includes multiple elements, the second dopant has a second concentration, one of the elements of the first material of the first layer is different from the elements of the second material of the second layer.
    Type: Application
    Filed: November 20, 2018
    Publication date: May 30, 2019
    Inventors: Tzu-Chieh HU, Wei-Chieh LIEN, Chen OU, Chia-Ming LIU, Tzu-Yi CHI