Patents by Inventor Tzuan-Horng Liu

Tzuan-Horng Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220139882
    Abstract: A package structure includes a first die, a die stack structure bonded to the first die, a support structure and an insulation structure. The support structure is disposed on the die stack structure, and a sidewall of the support structure is laterally shifted from a sidewall of the die stack structure. The insulation structure is disposed on the first die and laterally wraps around the die stack structure and the support structure.
    Type: Application
    Filed: January 14, 2022
    Publication date: May 5, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Patent number: 11322477
    Abstract: A structure including stacked substrates, a first semiconductor die, a second semiconductor die, and an insulating encapsulation is provided. The first semiconductor die is disposed over the stacked substrates. The second semiconductor die is stacked over the first semiconductor die. The insulating encapsulation includes a first encapsulation portion encapsulating the first semiconductor die and a second encapsulation portion encapsulating the second semiconductor die.
    Type: Grant
    Filed: June 9, 2020
    Date of Patent: May 3, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Patent number: 11264362
    Abstract: A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: March 1, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Min-Chien Hsiao, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu
  • Patent number: 11233035
    Abstract: A package structure includes a first die, a die stack structure, a support structure and an insulation structure. The die stack structure is bonded to the first die. The support structure is disposed on the die stack structure. A width of the support structure is larger than a width of the die stack structure and less than a width of the first die. The insulation structure at least laterally wraps around the die stack structure and the support structure.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: January 25, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20220013480
    Abstract: Provided is packages and methods of fabricating a package and. The method includes bonding a first device die with a second device die. The second device die is over the first device die. A bonding structure is formed in a combined structure including the first and the second device dies. A component is formed in the bonding structure. The component includes a passive device or a transmission line. The method further includes forming a first and a second electrical connectors electrically coupling to a first end and a second end of the component.
    Type: Application
    Filed: July 9, 2020
    Publication date: January 13, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Tzuan-Horng Liu, Jen-Li Hu
  • Publication number: 20210391168
    Abstract: A first mask and a second mask are sequentially provided to perform a multi-step exposure and development processes. Through proper overlay design of the first mask and the second mask, conductive wirings having acceptable overlay offset are formed.
    Type: Application
    Filed: August 27, 2021
    Publication date: December 16, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jie Chen, Hsien-Wei Chen, Tzuan-Horng Liu, Ying-Ju Chen
  • Publication number: 20210391322
    Abstract: A package structure and a method of fabricating the same are provided. The method includes bonding a first die and a second die to a wafer in a first die region of the wafer hybrid bonding; bonding a first dummy structure to the wafer in the first die region and a first scribe line of the wafer; and singulating the wafer and the first dummy structure along the first scribe line to form a stacked integrated circuit (IC) structure.
    Type: Application
    Filed: June 15, 2020
    Publication date: December 16, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210384164
    Abstract: A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.
    Type: Application
    Filed: August 19, 2021
    Publication date: December 9, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210375827
    Abstract: A package structure includes a first die, a die stack structure, a support structure and an insulation structure. The die stack structure is bonded to the first die. The support structure is disposed on the die stack structure. A width of the support structure is larger than a width of the die stack structure and less than a width of the first die. The insulation structure at least laterally wraps around the die stack structure and the support structure.
    Type: Application
    Filed: May 28, 2020
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210375826
    Abstract: A die stack structure including a first semiconductor die, a second semiconductor die, an insulating encapsulation and a redistribution circuit structure is provided. The first semiconductor die includes a first semiconductor substrate including a first portion and a second portion, a first interconnect structure and a first bonding structure. The first interconnect structure is disposed on a top surface of the second portion, a lateral dimension of the first portion is greater than a lateral dimension of the top surface of the second portion. The second semiconductor die is disposed on the first semiconductor die and includes a second bonding structure, the second semiconductor die is electrically connected with the first semiconductor die through the first and second bonding structures. The insulating encapsulation is disposed on the first portion and laterally encapsulating the second portion and the second semiconductor die.
    Type: Application
    Filed: May 28, 2020
    Publication date: December 2, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Min-Chien Hsiao, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu
  • Patent number: 11164848
    Abstract: A semiconductor structure includes a stacked structure. The stacked structure includes a first semiconductor die and a second semiconductor die. The first semiconductor die includes a first semiconductor substrate having a first active surface and a first back surface opposite to the first active surface. The second semiconductor die is over the first semiconductor die, and includes a second semiconductor substrate having a second active surface and a second back surface opposite to the second active surface. The second semiconductor die is bonded to the first semiconductor die through joining the second active surface to the first back surface at a first hybrid bonding interface along a vertical direction. Along a lateral direction, a first dimension of the first semiconductor die is greater than a second dimension of the second semiconductor die.
    Type: Grant
    Filed: January 8, 2020
    Date of Patent: November 2, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Min-Chien Hsiao, Sung-Feng Yeh, Tzuan-Horng Liu, Chuan-An Cheng
  • Publication number: 20210327807
    Abstract: A manufacturing method of a semiconductor structure is provided. A first semiconductor die includes a first semiconductor substrate, a first interconnect structure formed thereon, a first bonding conductor formed thereon, and a conductive via extending from the first interconnect structure toward a back surface of the first semiconductor substrate. The first semiconductor substrate is thinned to accessibly expose the conductive via to form a through semiconductor via (TSV). A second semiconductor die is bonded to the first semiconductor die. The second semiconductor die includes a second semiconductor substrate including an active surface facing the back surface of the first semiconductor substrate, a second interconnect structure between the second and the first semiconductor substrates, and a second bonding conductor between the second interconnect structure and the first semiconductor substrate and bonded to the TSV.
    Type: Application
    Filed: June 29, 2021
    Publication date: October 21, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210305094
    Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure comprising dielectric layers and metallization patterns therein, patterning the first interconnect structure to form a first opening, coating the first opening with a barrier layer, etching a second opening through the barrier layer and the exposed portion of the first substrate, depositing a liner in the first opening and the second opening, filling the first opening and the second opening with a conductive material, and thinning the first substrate to expose a portion of the conductive material in the second opening, the conductive material extending through the first interconnect structure and the first substrate forming a through substrate via.
    Type: Application
    Filed: September 4, 2020
    Publication date: September 30, 2021
    Inventors: Ming-Fa Chen, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210305214
    Abstract: A package includes a carrier substrate, a first die, and a second die. The first die includes a first bonding layer, a second bonding layer opposite to the first bonding layer, and an alignment mark embedded in the first bonding layer. The first bonding layer is fusion bonded to the carrier substrate. The second die includes a third bonding layer. The third bonding layer is hybrid bonded to the second bonding layer of the first die.
    Type: Application
    Filed: June 10, 2021
    Publication date: September 30, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Chao-Wen Shih, Hsien-Wei Chen, Sung-Feng Yeh, Tzuan-Horng Liu
  • Publication number: 20210296288
    Abstract: A chip structure includes first and second semiconductor chips. The first semiconductor chip includes a first semiconductor substrate, a first interconnection layer located on the first semiconductor substrate, a first protection layer covering the first interconnection layer, a gap fill layer located on the first protection layer, and first conductive vias embedded in the gap fill layer and electrically connected with the first interconnection layer.
    Type: Application
    Filed: June 3, 2021
    Publication date: September 23, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210296251
    Abstract: A semiconductor package includes a first die, a plurality of second dies and a through via. The second dies are disposed over and electrically connected to the first die. The through via is disposed between the second dies and electrically connected to the first die. The through via includes a first portion having a first width and a second portion having a second width different from the first width and disposed between the first portion and the first die. The first portion includes a first seed layer and a first conductive layer, and the first seed layer is disposed aside an interface between the first portion and the second portion.
    Type: Application
    Filed: June 4, 2021
    Publication date: September 23, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Nien-Fang Wu, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Publication number: 20210288030
    Abstract: In an embodiment, a device includes: a bottom integrated circuit die having a first front side and a first back side; a top integrated circuit die having a second front side and a second back side, the second back side being bonded to the first front side, the top integrated circuit die being free from through substrate vias (TSVs); a dielectric layer surrounding the top integrated circuit die, the dielectric layer being disposed on the first front side, the dielectric layer and the bottom integrated circuit die being laterally coterminous; and a through via extending through the dielectric layer, the through via being electrically coupled to the bottom integrated circuit die, surfaces of the through via, the dielectric layer, and the top integrated circuit die being planar.
    Type: Application
    Filed: May 28, 2021
    Publication date: September 16, 2021
    Inventors: Ming-Fa Chen, Tzuan-Horng Liu, Chao-Wen Shih, Sung-Feng Yeh, Nien-Fang Wu
  • Patent number: 11114413
    Abstract: A package structure includes a plurality of stacked die units and an insulating encapsulant. The plurality of stacked die units is stacked on top of one another, where each of the plurality of stacked die units include a first semiconductor die, a first bonding chip. The first semiconductor die has a plurality of first bonding pads. The first bonding chip is stacked on the first semiconductor die and has a plurality of first bonding structure. The plurality of first bonding structures is bonded to the plurality of first bonding pads through hybrid bonding. The insulating encapsulant is encapsulating the plurality of stacked die units.
    Type: Grant
    Filed: September 25, 2019
    Date of Patent: September 7, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih
  • Patent number: 11107680
    Abstract: A first mask and a second mask are sequentially provided to perform a multi-step exposure and development processes. Through proper overlay design of the first mask and the second mask, conductive wirings having acceptable overlay offset are formed.
    Type: Grant
    Filed: January 30, 2018
    Date of Patent: August 31, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jie Chen, Hsien-Wei Chen, Tzuan-Horng Liu, Ying-Ju Chen
  • Publication number: 20210249380
    Abstract: A stacking structure including a first die, a second die stacked on the first die, and a third die and a fourth die disposed on the second die. The first die has a first metallization structure, and the first metallization structure includes first through die vias. The second die has a second metallization structure, and second metallization structure includes second through die vias. The first through die vias are bonded with the second through die vias, and sizes of the first through die vias are different from sizes of the second through die vias. The third and fourth dies are disposed side-by-side and are bonded with the second through die vias.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Fa Chen, Sung-Feng Yeh, Tzuan-Horng Liu, Chao-Wen Shih