Patents by Inventor Tzy-Ying Lin

Tzy-Ying Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070267647
    Abstract: An optoelectronic device chip, and a method for making the chip, are disclosed. The chip comprises a device substrate, an optically transparent upper substrate, and a composite spacer layer which includes an adhesive material and a plurality of particles dispersed in said adhesive material. The distance between the device substrate and the upper substrate is controlled by the thickness of the composite spacer layer so that the variation is within the depth of focus of optical system.
    Type: Application
    Filed: May 22, 2006
    Publication date: November 22, 2007
    Inventors: Hsiao-Wen Lee, Peter Zung, Tzu-Han Lin, Tzy-Ying Lin, Chia-Yang Chang, Chien-Pang Lin
  • Patent number: 6841311
    Abstract: A new sequence and chemical composition for cleaning the surface of a halftone shift masks that use MoSiON as shifter material is provided. For purposes of repair or rework, the pellicle is removed from the mask so that the mask can be accessed. After the rework or repair has been completed, a new clean process is performed, for the new clean process the sequence of steps that is conventionally performed has been modified. After the new clean process has been completed, the pellicle is reinstalled over the surface of the mask.
    Type: Grant
    Filed: March 15, 2002
    Date of Patent: January 11, 2005
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Same-Ting Chen, Cheng-Shien Lee, Chin-Wang Hu, Chieh-Yuan Cheng, Hsiang-Chien Hsu, Tzy-Ying Lin, Wen-Rong Huang
  • Publication number: 20040224237
    Abstract: A method for repairing a defective photomask having contained therein a minimum of one defect first provides forming a masking layer upon the defective photomask such as to leave exposed the minimum of one defect. Within the invention the minimum of one defect within the defective photomask may be repaired while employing the masking layer as a defect repair masking layer, to thus form a repaired photomask from the defective photomask. The method provides for efficient repairing of the defective photomask, absent transparent substrate damage.
    Type: Application
    Filed: May 8, 2003
    Publication date: November 11, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tzy-Ying Lin, Chue-San Yoo, Chin-Wang Hu, Ming-Chih Hsieh, Ming-Feng Ho, Cheng-Hung Kung
  • Publication number: 20030203292
    Abstract: In accordance with the objectives of the invention a new method is provided for repairing photolithographic exposure masks. The invention uses an etch function of a conventional mask repair tool. The invention addresses defects that occur in a pattern of opaque material (such as chrome) created over the surface of an exposure mask whereby an (undesired) opening exists in the opaque material. The invention uses a focused ion-beam exposure of the surface of the exposure mask to purposely “damage” this surface over the area where the opaque material is required to be present. Repair accuracy is in this manner easy to control, the conventional problem of peeling of the opaque or light sensitive material is eliminated.
    Type: Application
    Filed: April 29, 2003
    Publication date: October 30, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co.
    Inventors: Same-Ting Chen, Tzy-Ying Lin
  • Patent number: 6555277
    Abstract: In accordance with the objectives of the invention a new method is provided for repairing photolithographic exposure masks. The invention uses an etch function of a conventional mask repair tool. The invention addresses defects that occur in a pattern of opaque material (such as chrome) created over the surface of an exposure mask whereby an (undesired) opening exists in the opaque material. The invention uses a focused E-beam exposure of the surface of the exposure mask to purposely “damage” this surface over the area where the opaque material is required to be present. Repair accuracy is in this manner easy to control, the conventional problem of peeling of the opaque or light sensitive material is eliminated.
    Type: Grant
    Filed: April 26, 2002
    Date of Patent: April 29, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Same-Ting Chen, Tzy-Ying Lin, Wen-Rong Huang
  • Patent number: 6309976
    Abstract: A method of forming a mask from a metal layer deposited upon a substrate patterned for exposure of a workpiece to radiation of a specific range of wavelengths with the substrate being transparent to the radiation comprises the following steps. Form the metal layer superjacent to the substrate. Form a photoresist layer superjacent to the metal layer. Expose the photoresist layer to a pattern. Develop the photoresist to Form a photoresist mask with an opening therethrough. Bake the photoresist mask, the metal layer and the substrate. Perform a descum operation. Perform an isotropic etching of the metal layer through the opening in the mask. Perform an after etching inspection measurement. Strip the photoresist mask. Perform an after stripping inspection measurement. The isotropic etching is performed with a wet etchant. The descum operation is performed with a dry plasma process including oxygen and nitrogen gases and an inert gas selected from argon and helium.
    Type: Grant
    Filed: March 22, 1999
    Date of Patent: October 30, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Tzy-Ying Lin, Cheng-Lung Duan, Tsung-Wen Tien
  • Patent number: 5471552
    Abstract: A method for fabricating planar lightwave circuits with at least one static-alignment fiber-guiding groove comprising the steps of: (a) fabricating a sandwiched Si-substrate by forming an etching stop layer on a first Si layer, followed by forming a second Si layer on the etching stop layer; (b) forming a waveguide layer on the Si-substrate, the waveguide layer containing at least one planar waveguide channel buried between a first cladding layer and a second cladding layer; (c) forming a photomask on the waveguide layer so as to allow the fiber-guiding grooves to be fabricated; (d) using the photomask and a first reactive ion etching procedure to form a first portion of the fiber-guiding groove, the first reactive ion etching procedure is controlled such that it etches through the waveguide layer and stops at the second Si layer; and (e) using the photomask and a second reactive ion etching procedure to form a second portion of the fiber-guiding groove, wherein the second reactive etching ion is selected in
    Type: Grant
    Filed: February 22, 1995
    Date of Patent: November 28, 1995
    Assignee: Industrial Technology Research Institute
    Inventors: Dong-Sing Wuu, Tzung-Rue Hsieh, Tzy-Ying Lin, Hong-Ming Chen