Abstract: The present technology relates to an electronic device. A memory device having improved metadata management performance according to the present technology includes a training operation controller configured to perform the training operation with a memory controller that controls the memory device, when power is supplied to the memory device, a training buffer configured to store training data used by the training operation controller during the training operation, and a normal operation controller configured to perform the normal operation under control of the memory controller, when the training operation is completed. The normal operation controller outputs the training data stored in the training buffer to the memory controller according to a request of the memory controller during the normal operation.

Abstract: The present technology relates to an electronic device. A memory device having improved metadata management performance according to the present technology includes a training operation controller configured to perform the training operation with a memory controller that controls the memory device, when power is supplied to the memory device, a training buffer configured to store training data used by the training operation controller during the training operation, and a normal operation controller configured to perform the normal operation under control of the memory controller, when the training operation is completed. The normal operation controller outputs the training data stored in the training buffer to the memory controller according to a request of the memory controller during the normal operation.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include a memory unit configured to store the write data. The semiconductor memory device may include an interface chip configured to receive a first timing signal and a second timing signal, and configured to detect a locking delay from the first timing signal and generate a third timing signal from the second timing signal generated by delaying the first timing signal using the detected locking delay by at least two periods.

Abstract: Provided herein may be a semiconductor memory device. The semiconductor memory device may include a memory unit configured to store the write data. The semiconductor memory device may include an interface chip configured to receive a first timing signal and a second timing signal, and configured to detect a locking delay from the first timing signal and generate a third timing signal from the second timing signal generated by delaying the first timing signal using the detected locking delay by at least two periods.