Patents by Inventor Umesh M. Kelkar

Umesh M. Kelkar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9818587
    Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
    Type: Grant
    Filed: March 14, 2013
    Date of Patent: November 14, 2017
    Assignee: Applied Materials, Inc.
    Inventors: Maurice E. Ewert, Anantha K. Subramani, Umesh M. Kelkar, Chandrasekhar Balasubramanyam, Joseph M. Ranish
  • Patent number: 9520267
    Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.
    Type: Grant
    Filed: August 25, 2014
    Date of Patent: December 13, 2016
    Assignee: Applied Mateirals, Inc.
    Inventors: Ludovic Godet, Jun Xue, Prashanth Kothnur, Umesh M. Kelkar, Matthew D. Scotney-Castle
  • Publication number: 20160233060
    Abstract: A chamber component for a processing chamber is disclosed herein. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has a textured surface. The textured surface includes a plurality of independent engineered macro features integrally formed with the component part body. The engineered macro features include a macro feature body extending from the textured surface.
    Type: Application
    Filed: February 4, 2016
    Publication date: August 11, 2016
    Inventors: Kadthala R. NARENDRNATH, Govinda RAJ, Goichi YOSHIDOME, Bopanna Ichettira VASANTHA, Umesh M. KELKAR
  • Publication number: 20160068958
    Abstract: Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.
    Type: Application
    Filed: April 10, 2014
    Publication date: March 10, 2016
    Applicant: Applied Materials, Inc.
    Inventors: Umesh M. Kelkar, Kallol Bera, Karthik Ramanathan, Garry K Kwong, Joseph Yudovsky
  • Publication number: 20150371827
    Abstract: The angular ion distribution in plasma processing is controlled using a bias voltage frequency. In one example, a plasma containing gas ions is generated in a plasma chamber. The plasma sheath is modified using an aperture disposed between the plasma sheath and the workpiece so that the plasma sheath takes a shape above the aperture. An oscillating radio frequency bias voltage is generated and applied to a workpiece holder. The workpiece holder applies the bias voltage to the workpiece to generate a workpiece bias voltage with respect to the plasma to attract ions across the plasma sheath toward the workpiece. The aperture and the frequency of the bias voltage control an angle at which the ions are attracted toward the workpiece.
    Type: Application
    Filed: August 25, 2014
    Publication date: December 24, 2015
    Inventors: Ludovic Godet, Jun Xue, Prashanth Kothnur, Umesh M. Kelkar, Matthew D. Scotney-Castle
  • Publication number: 20150345019
    Abstract: Embodiments of methods and apparatus for improving gas flow in a substrate processing chamber are provided herein. In some embodiments, a substrate processing chamber includes: a chamber body and a chamber lid defining an interior volume; a substrate support disposed within the interior volume and having a support surface to support a substrate; a gas passageway disposed in the lid opposite the substrate support to supply a gas mixture to the interior volume, the gas passageway including a first portion and a second portion; a first gas inlet disposed in the first portion to supply a first gas to the first portion of the gas passageway; and a second gas inlet disposed in the second portion to supply a second gas to the second portion.
    Type: Application
    Filed: May 30, 2014
    Publication date: December 3, 2015
    Applicant: Applied Materials, Inc.
    Inventors: XIAOXIONG YUAN, KARTIK SHAH, DHRITIMAN SUBHA KASHYAP, UMESH M. KELKAR, DIEN-YEH WU, MUHAMMAD M. RASHEED
  • Publication number: 20150329966
    Abstract: Embodiments described herein relate to a showerhead having a reflector plate with a gas injection insert for radially distributing gas. In one embodiment, a showerhead assembly includes a reflector plate and a gas injection insert. The reflector plate includes at least one gas injection port. The gas injection insert is disposed in the reflector plate, and includes a plurality of apertures. The gas injection insert also includes a baffle plate disposed in the gas injection insert, wherein the baffle plate also includes a plurality of apertures. A first plenum is formed between a first portion of the baffle plate and the reflector plate, and a second plenum is formed between a second portion of the baffle plate and the reflector plate. The plurality of apertures of the gas injection insert and the plurality of apertures of the baffle plate are not axially aligned.
    Type: Application
    Filed: April 20, 2015
    Publication date: November 19, 2015
    Inventors: Kartik SHAH, Chaitanya A. PRASAD, Kevin Joseph BAUTISTA, Jeffrey TOBIN, Umesh M. KELKAR, Lara HAWRYLCHAK
  • Patent number: 9123758
    Abstract: Methods and apparatus for mixing and delivery of process gases are provided herein. In some embodiments, a gas injection apparatus includes an elongate top plenum comprising a first gas inlet; an elongate bottom plenum disposed beneath and supporting the top plenum, the bottom plenum comprising a second gas inlet; a plurality of first conduits disposed through the bottom plenum and having first ends fluidly coupled to the top plenum and second ends disposed beneath the bottom plenum; and a plurality of second conduits having first ends fluidly coupled to the bottom plenum and second ends disposed beneath the bottom plenum; wherein a lower end of the bottom plenum is adapted to fluidly couple the gas injection apparatus to a mixing chamber such that the second ends of the plurality of first conduits and the second ends of the plurality of second conduits are in fluid communication with the mixing chamber.
    Type: Grant
    Filed: January 14, 2014
    Date of Patent: September 1, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Agus Sofian Tjandra, Kalyanjit Ghosh, Christopher S. Olsen, Umesh M. Kelkar
  • Publication number: 20140216585
    Abstract: Methods and apparatus for mixing and delivery of process gases are provided herein. In some embodiments, a gas injection apparatus includes an elongate top plenum comprising a first gas inlet; an elongate bottom plenum disposed beneath and supporting the top plenum, the bottom plenum comprising a second gas inlet; a plurality of first conduits disposed through the bottom plenum and having first ends fluidly coupled to the top plenum and second ends disposed beneath the bottom plenum; and a plurality of second conduits having first ends fluidly coupled to the bottom plenum and second ends disposed beneath the bottom plenum; wherein a lower end of the bottom plenum is adapted to fluidly couple the gas injection apparatus to a mixing chamber such that the second ends of the plurality of first conduits and the second ends of the plurality of second conduits are in fluid communication with the mixing chamber.
    Type: Application
    Filed: January 14, 2014
    Publication date: August 7, 2014
    Applicant: APPLIED MATERIALS, INC.
    Inventors: AGUS SOFIAN TJANDRA, KALYANJIT GHOSH, CHRISTOPHER S. OLSEN, UMESH M. KELKAR
  • Publication number: 20130270107
    Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
    Type: Application
    Filed: March 14, 2013
    Publication date: October 17, 2013
    Inventors: MAURICE E. EWERT, Anantha K. SUBRAMANI, Umesh M. KELKAR, Chandrasekhar BALASUBRAMANYAM, Joseph M. RANISH
  • Publication number: 20130196514
    Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
    Type: Application
    Filed: March 14, 2013
    Publication date: August 1, 2013
    Applicant: Applied Materials, Inc.
    Inventors: Maurice E. EWERT, Anantha SUBRAMANI, Umesh M. KELKAR, Chandrasekhar BALASUBRAMANYAM, Joseph M. RANISH
  • Patent number: 8404048
    Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: March 26, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Maurice E. Ewert, Anantha K. Subramani, Umesh M. Kelkar, Chandrasekhar Balasubramanyam, Joseph M. Ranish
  • Publication number: 20120231633
    Abstract: Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.
    Type: Application
    Filed: March 11, 2011
    Publication date: September 13, 2012
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Maurice E. Ewert, Anantha K. Subramani, Umesh M. Kelkar, Chandrasekhar Balasubramanyam, Joseph M. Ranish
  • Publication number: 20090308732
    Abstract: Embodiments of the present invention generally relate to an apparatus and method for uniform sputter depositing of materials into the bottom and sidewalls of high aspect ratio features on a substrate. In one embodiment, a sputter deposition system includes a collimator that has apertures having aspect ratios that decrease from a central region of the collimator to a peripheral region of the collimator. In one embodiment, the collimator is coupled to a grounded shield via a bracket member that includes a combination of internally and externally threaded fasteners. In another embodiment, the collimator is integrally attached to a grounded shield. In one embodiment, a method of sputter depositing material includes pulsing the bias on the substrate support between high and low values.
    Type: Application
    Filed: June 11, 2009
    Publication date: December 17, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Yong Cao, Maurice E. Ewert, Xianmin Tang, Keith A. Miller, Daniel C. Lubben, Umesh M. Kelkar, Tza-Jing Gung, Anantha K. Subramani