Abstract: A vertical cavity surface emitting laser diode (VCSEL) includes a substrate, a lower Bragg reflector (DBR) layer, an active region, an upper Bragg reflector (DBR) layer, and a current confinement layer. The lower DBR layer is on the substrate. The active region is on the lower DBR layer on the active region. The current confinement layer is inside or outside the active region. When the current confinement layer comprises a compound containing phosphorus, such as AlAsP or AlGaAsP, and the phosphorus (P) content is within a specific range, the insulation rate of the current confinement layer will not be excessively fast to the point of being difficult to control. Additionally, the reproducibility of the aperture in the current confinement layer between batches of the VCSEL production is improved. Furthermore, the divergence angle of the VCSEL can be further reduced, thereby significantly enhancing the sensing capabilities of Lidar or 3D sensing.

Abstract: Provided is a vertical-cavity surface-emitting semiconductor laser diode, including a substrate and an epitaxial stack structure disposed on the substrate. The epitaxial stack structure includes an active region, a current confinement layer and a mode filter layer. The mode filter layer includes an optical aperture, and the mode filter layer is able to be oxidized. Accordingly, the optical aperture of the mode filter layer is formed by oxidizing the mode filter layer.