Patents by Inventor VassIII Leniachine

VassIII Leniachine has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase change memory devices and fabrication methods thereof
    Publication number: 20090039338
    Abstract: In a memory device, at least one conductive contact having a width of less than, or equal to, about 30 nm may be formed on a first electrode. A dielectric layer may be formed on the sides of the at least one conductive contact, and a phase change material film may be formed on the conductive contact. A second electrode may be formed on the phase change material.
    Type: Application
    Filed: October 8, 2008
    Publication date: February 12, 2009
    Inventors: Dong-Seok Suh, Yeon-Ho Khang, VassIII Leniachine, Mi-Jeong Song, Sergey Antonov