Patents by Inventor Venkata Naga Ranjith Kuma Nelluri

Venkata Naga Ranjith Kuma Nelluri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor element with reduced lateral electrical field
    Patent number: 10580863
    Abstract: In sophisticated semiconductor devices, the lateral electric field in fully depleted transistor elements operated at elevated supply voltages may be significantly reduced by establishing a laterally graded dopant profile at edge regions of the respective channel regions. In some illustrative embodiments to this end, one or more dopant species may be incorporated prior to completing the gate electrode structure.
    Type: Grant
    Filed: October 10, 2017
    Date of Patent: March 3, 2020
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Damien Angot, Alban Zaka, Tom Herrmann, Venkata Naga Ranjith Kuma Nelluri, Jan Hoentschel, Lars Mueller-Meskamp, Martin Gerhardt
  • TRANSISTOR ELEMENT WITH REDUCED LATERAL ELECTRICAL FIELD
    Publication number: 20190109192
    Abstract: In sophisticated semiconductor devices, the lateral electric field in fully depleted transistor elements operated at elevated supply voltages may be significantly reduced by establishing a laterally graded dopant profile at edge regions of the respective channel regions. In some illustrative embodiments to this end, one or more dopant species may be incorporated prior to completing the gate electrode structure.
    Type: Application
    Filed: October 10, 2017
    Publication date: April 11, 2019
    Inventors: Damien Angot, Alban Zaka, Tom Herrmann, Venkata Naga Ranjith Kuma Nelluri, Jan Hoentschel, Lars Mueller-Meskamp, Martin Gerhardt