Abstract: Command paths, apparatuses, and methods for providing a command to a data block are described. In an example command path, a command receiver is configured to receive a command and a command buffer is coupled to the command receiver and configured to receive the command and provide a buffered command. A command block is coupled to the command buffer to receive the buffered command. The command block is configured to provide the buffered command responsive to a clock signal and is further configured to add a delay before to the buffered command, the delay based at least in part on a shift count. A command tree is coupled to the command block to receive the buffered command and configured to distribute the buffered command to a data block.

Abstract: Methods, devices, and systems are disclosed, including those for a buffer having pre-driver circuitry that provide voltages to thin-gate dielectric transistors. One such buffer may include a primary pull-up pre-driver operably coupled to a primary pull-up transistor; a secondary pull-up pre-driver operably coupled to a secondary pull-up transistor; a primary pull-down pre-driver operably coupled to a primary pull-down transistor; and a secondary pull-down pre-driver operably coupled to a secondary pull-down transistor. The pre-drivers may provide a sufficiently low voltage to a gate of a transistor operably coupled thereto so as to sustain a gate dielectric integrity of the transistor, wherein at least one of the primary pull-up pre-driver, the secondary pull-up pre-driver, primary pull-down pre-driver, and the secondary pull-down pre-driver is configured to provide a voltage greater than or equal to a ground voltage and less than or equal to a supply voltage.

Abstract: Electronic apparatus and fabrication of the electronic apparatus that includes detection of the majority of values in a plurality of data bits may be used in a variety of applications. Embodiments include application of majority bit detection to process data bits in a device for further analysis in the device based on the results of the majority bit detection. In an embodiment, such further processing in a memory device after majority bit detection may include data bit inversion prior to outputting the data from the memory device.

Abstract: Circuits, memories, and methods for latching a write command and later provided write data including write command and write data timing circuits. One such timing circuit includes internal write command latch to latch an internal write command in response to write command latch signal. The internal write command latch releases the latched write command in response to the write command latch signal after a latency delay. The timing circuit further includes a write leveling flip-flop (FF) circuit and a write data register. One such method includes generating and latching an internal write command. The latched internal write command is released after a latency delay responsive to the memory clock signal. The internal write command is propagated over an internal write command path. Write data is captured and internal write command latched in response to a write clock signal. The captured write data is released to be written to memory.

Abstract: Embodiments of the present invention include circuitry for issuing address and data signals to a memory array using a system clock and a write clock. A locked loop may be used to compensate for additional delay experienced by the system clock relative to write clock and ensure synchronization of the clock signals. A write latch enable block may be used to develop a write latch enable signal for issuance along with a corresponding address signal. The write latch enable signal can be timed such that it arrives at an appropriate time to issue the data corresponding to the issued address.

Abstract: Methods, devices, and systems are disclosed, including those for a buffer having pre-driver circuitry configured to provide voltages to thin-gate dielectric transistors. One such buffer may comprise a plurality of pre-drivers wherein each pre-driver of the plurality of pre-drivers is operably coupled to a transistor of a plurality of transistors. The buffer may further comprise one or more clamping devices, wherein at least one transistor of the plurality of transistors has a gate coupled to at least one clamping device of the one or more clamping devices.

Abstract: Circuits, memories, and methods for latching a write command and later provided write data including write command and write data timing circuits. One such timing circuit includes internal write command latch to latch an internal write command in response to write command latch signal. The internal write command latch releases the latched write command in response to the write command latch signal after a latency delay. The timing circuit further includes a write leveling flip-flop (FF) circuit and a write data register. One such method includes generating and latching an internal write command. The latched internal write command is released after a latency delay responsive to the memory clock signal. The internal write command is propagated over an internal write command path. Write data is captured and internal write command latched in response to a write clock signal. The captured write data is released to be written to memory.

Abstract: Circuits, memories, and methods for latching a write command and later provided write data including write command and write data timing circuits. One such timing circuit includes internal write command latch to latch an internal write command in response to write command latch signal. The internal write command latch releases the latched write command in response to the write command latch signal after a latency delay. The timing circuit further includes a write leveling flip-flop (FF) circuit and a write data register. The FF circuit latches the internal write command in response to an internal write command FF signal based on a write clock signal and generates an internal write enable signal in response to latching the internal write command. The write data register captures write data in response to the write clock signal and releases the captured write data in response to a delayed internal write enable signal.

Abstract: Embodiments of the present invention include circuitry for issuing address and data signals to a memory array using a system clock and a write clock. A locked loop may be used to compensate for additional delay experienced by the system clock relative to write clock and ensure synchronization of the clock signals. A write latch enable block may be used to develop a write latch enable signal for issuance along with a corresponding address signal. The write latch enable signal can be timed such that it arrives at an appropriate time to issue the data corresponding to the issued address.

Abstract: Techniques for reducing gate induced drain leakage (GIDL) in memory devices utilizing negative wordline architectures. More specifically, a method and apparatus are provided to determine whether any of the word lines in a section of a memory array are active. If any one of the plurality of word lines is active, each of the inactive word lines in the section are coupled to a negative voltage level. If none of the plurality of word lines is active, each of the plurality of word lines is coupled to ground to reduce GIDL.

Abstract: Embodiments of the present invention include circuitry for issuing address and data signals to a memory array using a system clock and a write clock. A locked loop may be used to compensate for additional delay experienced by the system clock relative to write clock and ensure synchronization of the clock signals. A write latch enable block may be used to develop a write latch enable signal for issuance along with a corresponding address signal. The write latch enable signal can be timed such that it arrives at an appropriate time to issue the data corresponding to the issued address.

Abstract: Embodiments of the present invention include circuitry for issuing address and data signals to a memory array using a system clock and a write clock. A locked loop may be used to compensate for additional delay experienced by the system clock relative to write clock and ensure synchronization of the clock signals. A write latch enable block may be used to develop a write latch enable signal for issuance along with a corresponding address signal. The write latch enable signal can be timed such that it arrives at an appropriate time to issue the data corresponding to the issued address.

Abstract: Methods, devices, and systems are disclosed, including those for a buffer having pre-driver circuitry configured to provide voltages to thin-gate dielectric transistors. One such buffer may comprise a plurality of pre-drivers wherein each pre-driver of the plurality of pre-drivers is operably coupled to a transistor of a plurality of transistors. The buffer may further comprise one or more clamping devices, wherein at least one transistor of the plurality of transistors has a gate coupled to at least one clamping device of the one or more clamping devices.

Abstract: Electronic apparatus and fabrication of the electronic apparatus that includes detection of the majority of values in a plurality of data bits may be used in a variety of applications. Embodiments include application of majority bit detection to process data bits in a device for further analysis in the device based on the results of the majority bit detection. In an embodiment, such further processing in a memory device after majority bit detection may include data bit inversion prior to outputting the data from the memory device.

Abstract: Methods, devices, and systems are disclosed, including those for a buffer having pre-driver circuitry configured to provide voltages to thin-gate dielectric transistors. One such buffer may comprise a primary pull-up pre-driver operably coupled to a primary pull-up transistor, a secondary pull-up pre-driver operably coupled to a secondary pull-up transistor, a primary pull-down pre-driver operably coupled to a primary pull-down transistor, and a secondary pull-down pre-driver operably coupled to a secondary pull-down transistor. Each of the primary pull-up pre-driver, the secondary pull-up pre-driver, primary pull-down pre-driver, and the secondary pull-down pre-driver are configured to provide a voltage to a gate of a transistor operably coupled thereto at a voltage level so as to sustain gate dielectric integrity of the transistor.

Abstract: Methods, devices, and systems are disclosed, including those for a buffer having pre-driver circuitry configured to provide voltages to thin-gate dielectric transistors One such buffer may comprise a primary pull-up pre-driver operably coupled to a primary pull-up transistor, a secondary pull-up pre-driver operably coupled to a secondary pull-up transistor, a primary pull-down pre-driver operably coupled to a primary pull-down transistor, and a secondary pull-down pre-driver operably coupled to a secondary pull-down transistor. Each of the primary pull-up pre-driver, the secondary pull-up pre-driver., primary pull-down pre-driver, and the secondary pull-down pre-driver are configured to provide a voltage to a gate of a transistor operably coupled thereto at a voltage level so as to sustain gate dielectric integrity of the transistor.

Abstract: Embodiments are described for an output driver circuit capable of maintaining a substantially constant output impedance across a wide range of output voltages. The driver circuit includes a pull-up circuit and a pull-down circuit, each having two or more current paths that either source currents to or sink currents from the output node. The addition of the third current path provides additional current such that the sum of the total currents have a magnitude that changes linearly as the output voltage at the output node is being driven.

Abstract: Embodiments are described for an output driver circuit capable of maintaining a substantially constant output impedance across a wide range of output voltages. The driver circuit includes a pull-up circuit and a pull-down circuit, each having two or more current paths that either source currents to or sink currents from the output node. The addition of the third current path provides additional current such that the sum of the total currents have a magnitude that changes linearly as the output voltage at the output node is being driven.

Abstract: Techniques for reducing gate induced drain leakage (GIDL) in memory devices utilizing negative wordline architectures. More specifically, a method and apparatus are provided to determine whether any of the word lines in a section of a memory array are active. If any one of the plurality of word lines is active, each of the inactive word lines in the section are coupled to a negative voltage level. If none of the plurality of word lines is active, each of the plurality of word lines is coupled to ground to reduce GIDL.

Abstract: Techniques for reducing gate induced drain leakage (GIDL) in memory devices utilizing negative wordline architectures. More specifically, a method and apparatus are provided to determine whether any of the word lines in a section of a memory array are active. If any one of the plurality of word lines is active, each of the inactive word lines in the section are coupled to a negative voltage level. If none of the plurality of word lines is active, each of the plurality of word lines is coupled to ground to reduce GIDL.