Abstract: Patterned ceramic wavelength-converting phosphor structures may be bonded to an LED to form a pcLED. The phosphor structures are patterned with features that provide enhanced oxygen permeability to an adhesive bond used to attach the phosphor structure to the LED. The enhanced oxygen permeability reduces transient degradation of the pcLED occurring in the region of the adhesive bond.

Abstract: A light emitting package and method of making the package are described. The package contains an LED bonded to a light converting layer using an adhesive. The adhesive is jet printed, mask sprayed or extruded onto one of the surfaces before bonding. The adhesive has materials in different sections that differ in refractive index, oxygen permeability, and/or heat conductivity. The materials are formed in concentric rings around the adhesive center, islands or lines and are disposed to provide optical lensing or increasing permeability/heat conductivity with decreasing distance from the center. A substantially-reflective optical side coat surrounds the LED, adhesive layer and connecting structure.

Abstract: A light emitting package and method of making the package are described. The package contains an LED bonded to a light converting layer using an adhesive. The adhesive is jet printed, mask sprayed or extruded onto one of the surfaces before bonding. The adhesive has materials in different sections that differ in refractive index, oxygen permeability, and/or heat conductivity. The materials are formed in concentric rings around the adhesive center, islands or lines and are disposed to provide optical lensing or increasing permeability/heat conductivity with decreasing distance from the center. A substantially-reflective optical side coat surrounds the LED, adhesive layer and connecting structure.

Abstract: Method and systems for crystallizing a thin film provide an optics system configured to produce a laser spot beam directed towards the thin film and truncate the laser spot beam before the laser spot beam comes into contact with the thin film. The truncated laser spot beam is continually translated in a first direction while irradiating an amorphous silicon area of the thin film to generate a molten zone in the irradiated amorphous silicon area, where the thin film cools and solidifies to form crystal grains.

Abstract: Patterned ceramic wavelength-converting phosphor structures may be bonded to an LED to form a pcLED. The phosphor structures are patterned with features that provide enhanced oxygen permeability to an adhesive bond used to attach the phosphor structure to the LED. The enhanced oxygen permeability reduces transient degradation of the pcLED occurring in the region of the adhesive bond.

Abstract: Disclosed are methods and apparatuses for recirculating gas in an equipment front end module (“EFEM”), including the ability to provide a gas during recirculation and control the gas flow, pressure, and composition of the environment in the EFEM during recirculation.

Abstract: Disclosed are methods and apparatuses for recirculating gas in an equipment front end module (“EFEM”), including the ability to provide a gas during recirculation and control the gas flow, pressure, and composition of the environment in the EFEM during recirculation.

Abstract: A processing system for delivering a process gas to a reaction chamber using a recipe having a recipe flow rate is provided. The processing system includes a gas flow delivery system configured for delivering the process gas, wherein said gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one sensor. The processing system also includes a programmed computing device configured for applying a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

Abstract: A gas distribution system for supplying a gas mixture to a plasma process chamber is provided. A first valve arrangement is connected to upstream ends of a first gas line and a second gas line. A second valve arrangement is connected to downstream ends of the first gas line and the second gas line. A first gas distribution outlet line is connected between a gas supply and the first valve arrangement and a first chamber inlet line connected between the second valve arrangement and the plasma process chamber. A first evacuation line is connected to the first gas line at a location between the first valve arrangement and the second valve arrangement. A second evacuation line is connected to the second gas line at a location between the first valve arrangement and the second valve arrangement. The first evacuation line and second evacuation line are in fluid communication with a vacuum line.

Abstract: A method for delivering a process gas to a reaction chamber of a plasma processing system using a recipe having a recipe flow rate is provided. The method includes delivering the process gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one pressure sensor. The method also includes applying, using a programmed computing device, a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

Abstract: A method for delivering a process gas to a reaction chamber of a plasma processing system using a recipe having a recipe flow rate is provided. The method includes delivering the process gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice. The predicted flow rate is previously computed by pressurizing a gas. The predicted flow rate further being previously computed measuring a set of upstream pressure values of the gas via at least one pressure sensor. The method also includes applying, using a programmed computing device, a calibration factor of a set of calibration factors to determine the predicted flow rate, the calibration factor being a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values.

Abstract: A method for determining an actual gas flow rate as gas flows through a gas flow delivery system is provided. The method includes sending the gas through the gas flow delivery system into a gas conduit, wherein a section of the gas conduit is widened to form an orifice. The method also includes pressurizing the gas to create a choked flow condition within the orifice of the gas conduit. The method further includes measuring upstream pressure of the gas via a set of pressure sensors. The method yet also includes calculating the actual flow rate based on the upstream pressure of the orifice of the gas conduit.

Abstract: A gas flow rate verification apparatus is provided for shared use in a multiple tool semiconductor processing platform. The gas flow rate verification apparatus is defined to measure a pressure rate of rise and temperature within a test volume for determination of a corresponding gas flow rate. The apparatus includes first and second volumes, wherein the second volume is larger than the first volume. The apparatus also includes first and second pressure measurement devices, wherein the second pressure measurement device is capable of measuring higher pressures. Based on the target gas flow rate to be measured, either the first or second volume can be selected as the test volume, and either the first or second pressure measurement device can be selected to measure the pressure in the test volume. Configurability of the apparatus enables accurate measurement of gas flow rates over a broad range and in an time efficient manner.

Abstract: A method for determining an actual gas flow rate in a reaction chamber of a plasma processing system is provided. The method includes delivering gas by a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice, which is located upstream from the reaction chamber. The method also includes pressurizing the gas to create a choked flow condition within the orifice. The method further includes measuring a set of upstream pressure values of the gas via a set of pressure sensors. The method yet also includes applying a calibration factor of a set of calibration factors to determine the actual flow rate. The calibration factor is a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values, which is associated with an indicated flow rate for an MFC.

Abstract: Combinations of hydrophilic and hydrophobic entities in a biodegradable sustained release implant are shown to modulate each other's rate of release. Formulations of a therapeutically active agent and modulator provide substantially constant rate of release for an extended period of time.

Abstract: A gas distribution system for supplying a gas mixture to a plasma process chamber is provided. A first valve arrangement is connected to upstream ends of a first gas line and a second gas line. A second valve arrangement is connected to downstream ends of the first gas line and the second gas line. A first gas distribution outlet line is connected between a gas supply and the first valve arrangement and a first chamber inlet line connected between the second valve arrangement and the plasma process chamber. A first evacuation line is connected to the first gas line at a location between the first valve arrangement and the second valve arrangement. A second evacuation line is connected to the second gas line at a location between the first valve arrangement and the second valve arrangement. The first evacuation line and second evacuation line are in fluid communication with a vacuum line.

Abstract: A gas flow rate verification apparatus is provided for shared use in a multiple tool semiconductor processing platform. The gas flow rate verification apparatus is defined to measure a pressure rate of rise and temperature within a test volume for determination of a corresponding gas flow rate. The apparatus includes first and second volumes, wherein the second volume is larger than the first volume. The apparatus also includes first and second pressure measurement devices, wherein the second pressure measurement device is capable of measuring higher pressures. Based on the target gas flow rate to be measured, either the first or second volume can be selected as the test volume, and either the first or second pressure measurement device can be selected to measure the pressure in the test volume. Configurability of the apparatus enables accurate measurement of gas flow rates over a broad range and in an time efficient manner.

Abstract: Combinations of hydrophilic and hydrophobic entities in a biodegradable sustained release implant are shown to modulate each other's rate of release. Formulations of a therapeutically active agent and modulator provide substantially constant rate of release for an extended period of time.

Abstract: A method for determining an actual gas flow rate in a reaction chamber of a plasma processing system is provided. The method includes delivering gas fay a gas flow delivery system controlled by a mass flow controller (MFC) to an orifice, which is located upstream from the reaction chamber. The method also includes pressurizing the gas to create a choked flow condition within the orifice. The method further includes measuring a set of upstream pressure values of the gas via a set of pressure sensors. The method yet also includes applying a calibration factor of a set of calibration factors to determine the actual flow rate. The calibration factor is a ratio of an average of the set of upstream pressure values to an average of a set of golden upstream pressure values, which is associated with an indicated flow rate for an MFC.

Abstract: A gas flow rate verification apparatus is provided for shared use in a multiple tool semiconductor processing platform. The gas flow rate verification apparatus is defined to measure a pressure rate of rise and temperature within a test volume for determination of a corresponding gas flow rate. The apparatus includes first and second volumes, wherein the second volume is larger than the first volume. The apparatus also includes first and second pressure measurement devices, wherein the second pressure measurement device is capable of measuring higher pressures. Based on the target gas flow rate to be measured, either the first or second volume can be selected as the test volume, and either the first or second pressure measurement device can be selected to measure the pressure in the test volume. Configurability of the apparatus enables accurate measurement of gas flow rates over a broad range and in an time efficient manner.