Abstract: A portable device and associated method are described for use with a system in which a locating signal is transmitted from within the ground during an operational procedure. The locating signal includes a transmission frequency that is selectable from a group of discrete transmission frequencies in a frequency range and the region includes electromagnetic noise that can vary. The portable device includes a receiver having a bandwidth that includes the transmission frequency range and is operable for measuring the electromagnetic noise in the transmission frequency range to establish a frequency content of the electromagnetic noise for use in selecting one of the discrete transmission frequencies that is subsequently transmitted as the locating signal during the operational procedure. The locating signal can be transmitted from a boring tool, a pullback arrangement or an inground cable. A predicted maximum operational depth for a transmitter can be determined prior to the operational procedure.

Abstract: A drill string communication system is described. An uphole transceiver can couple a signal onto the drill string at a power that is always greater that a selectable power for a downhole signal. Communication from a drill rig to an inground tool can be re-initiated using a maximum uphole transmit power of an uphole transceiver. A procedure can establish a new set of transmission parameters for a drill string signal to establish communication between the drill rig and the inground tool. The system can include a walkover locator that receives an active/inactive status-controlled electromagnetic locating signal. Responsive to a locating signal degradation, a reconfiguration command can modify the locating signal. The uphole transceiver and a downhole transceiver can automatically modify at least one parameter of a downhole signal. An uphole receiver can apply a compensation response to a transferred signal to compensate for a drill string channel transfer function.

Abstract: The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.

Abstract: A transmitter is carried proximate to an inground tool for sensing a plurality of operational parameters relating to the inground tool. The transmitter customizes a data signal to characterize one or more of the operational parameters for transmission from the inground tool based on the operational status of the inground tool. A receiver receives the data signal and recovers the operational parameters. Advanced data protocols are described. Pitch averaging and enhancement of dynamic pitch range for accelerometer readings are described based on monitoring mechanical shock and vibration of the inground tool.

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide.

Abstract: A transmitter is carried proximate to an inground tool for sensing a plurality of operational parameters relating to the inground tool. The transmitter customizes a data signal to characterize one or more of the operational parameters for transmission from the inground tool based on the operational status of the inground tool. A receiver receives the data signal and recovers the operational parameters. Advanced data protocols are described. Pitch averaging and enhancement of dynamic pitch range for accelerometer readings are described based on monitoring mechanical shock and vibration of the inground tool.

Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

Abstract: The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

Abstract: A portable device and associated method are described for use with a system in which a locating signal is transmitted from within the ground during an operational procedure. The locating signal includes a transmission frequency that is selectable from a group of discrete transmission frequencies in a frequency range and the region includes electromagnetic noise that can vary. The portable device includes a receiver having a bandwidth that includes the transmission frequency range and is operable for measuring the electromagnetic noise in the transmission frequency range to establish a frequency content of the electromagnetic noise for use in selecting one of the discrete transmission frequencies that is subsequently transmitted as the locating signal during the operational procedure. The locating signal can be transmitted from a boring tool, a pullback arrangement or an inground cable. A predicted maximum operational depth for a transmitter can be determined prior to the operational procedure.

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract: The invention provides chemical-mechanical polishing compositions and methods of chemically-mechanically polishing a substrate, especially a substrate comprising a silicon oxide layer, with the chemical-mechanical polishing compositions. The polishing compositions comprise first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 75 nm to about 200 nm, and are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. % a functionalized heterocycle, a cationic polymer selected from a quaternary amine, is cationic polyvinyl alcohol, and a cationic cellulose, optionally a carboxylic acid, a pH-adjusting agent, and an aqueous carrier, and have a pH of about 1 to about 6.

Abstract: The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria, (b) a water-soluble cationic polymer or copolymer, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide.

Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract: Described are materials and methods for processing (polishing or planarizing) a substrate that contains pattern dielectric material using a polishing composition (aka “slurry”) and an abrasive pad, e.g., CMP processing.

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Abstract: The invention provides a chemical-mechanical polishing composition including wet-process ceria particles having a median particle size of about 25 nm to about 150 nm and a particle size distribution of about 300 nm or more, and an aqueous carrier. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon layer, with the polishing composition.