Abstract: Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic top plate having a top surface with a processing region. One or more electrodes is within the ceramic top plate. A plurality of mesas is within the processing region and on the top surface of the ceramic plate or vertically over an edge of one of the one or more electrodes.

Abstract: An electrostatic chuck is described that has radio frequency coupling suitable for use in high power plasma environments. In some examples, the chuck includes a base plate, a top plate, a first electrode in the top plate proximate the top surface of the top plate to electrostatically grip a workpiece, and a second electrode in the top plate spaced apart from the first electrode, the first and second electrodes being coupled to a power supply to electrostatically charge the first electrode.

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body. The body may include a support plate defining a substrate support surface. The body may include a base plate coupled with the support plate. A bottom surface of the base plate may define an annular recess. The body may include a cooling plate coupled with the base plate. The assemblies may include a support stem coupled with the body. The assemblies may include a heater embedded within the body. The assemblies may include one or more electrodes embedded within the body. The assemblies may include an annular plate disposed within the annular recess. The annular plate may have a thermal conductivity of less than about 20 W/mK. The assemblies may include a vacuum sealing element disposed between the annular plate and the cooling plate. The assemblies may include a thermal gasket disposed radially inward of the vacuum sealing element.

Abstract: Electrostatic chucks (ESCs) for plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a substrate support assembly includes a ceramic bottom plate having heater elements therein. The substrate support assembly also includes a ceramic top plate having an electrode therein. A metal layer is between the ceramic top plate and the ceramic bottom plate. The ceramic top plate is in direct contact with the metal layer, and the metal layer is in direct contact with the ceramic bottom plate.

Abstract: Embodiments of the present disclosure generally relate to an electrostatic chuck assembly suitable for use in cryogenic applications. In one or more embodiments, an electrostatic chuck assembly is provided and includes an electrostatic chuck having a substrate supporting surface opposite a bottom surface, a cooling plate having a top surface, where the cooling plate contains an aluminum alloy having a coefficient of thermal expansion (CTE) of less than 22 ppm/° C., and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling plate, where the bonding layer contains a silicone material.

Abstract: A heater assembly having a backside purge gap formed between a top plate and a heater of the heater assembly, the top plate having a top plate wall. The top plate wall having an upper portion, a middle portion and a lower portion, the middle portion forming an incline relative to the top portion.

Abstract: A gas is received through an inlet. A portion of the gas is supplied to an electrostatic chuck. A portion of the gas is re-circulated through a compressor. A pressure of the second portion of the gas is increased. The second portion of the gas is stored in a gas storage.

Abstract: The present disclosure is a method of bonding an electrostatic chuck to a temperature control base. According to the embodiments, a bonding layer is formed between a dielectric body comprising the electrostatic chuck and a temperature control base. A flow aperture extends through the dielectric body and is aligned with a flow aperture in the temperature control base. The bonding layer is also configured with an opening that aligns with apertures in the dielectric body and the temperature control base. In one aspect, a porous plug may be disposed within the flow aperture to protect the bonding layer. In another aspect, a seal is disposed within the flow aperture to seal off the boding layer from gases in the flow aperture.

Abstract: Implementations described herein provide a substrate support assembly. The substrate support assembly has an electrostatic chuck having a workpiece supporting surface and a bottom surface. The substrate support assembly further includes a plurality of layers which has a thermal interface layer. The plurality of layers are disposed below the electrostatic chuck. A cooling base having a top surface, the top surface is disposed below the plurality of layers. A temperature differential across the thermal interface layer is about 150 degrees Celsius when the workpiece supporting surface of the electrostatic chuck is at a temperature of about 300 degrees Celsius.

Abstract: Embodiments described herein relate a cleaning fixture and method to prevent chemical solutions from contacting the various substrate supporting member features and penetrating into the holes and the metal plate of the substrate supporting surface. The cleaning fixture includes a mounting plate having a plurality of thru-holes arranged on a bolt circle and configured to align with a plurality of thread holes disposed in an electrostatic chuck, a recess formed in the mounting plate, and a gas port formed through the mounting plate. A sealed plenum is formed between the recess of the mounting plate and a lower surface of the electrostatic chuck when the electrostatic chuck is coupled to the mounting plate. The gas port is fluidly coupled to the sealed plenum.

Abstract: Embodiments of the present disclosure generally relate to an electrostatic chuck assembly suitable for use in cryogenic applications. In one or more embodiments, an electrostatic chuck assembly is provided and includes an electrostatic chuck having a substrate supporting surface opposite a bottom surface, a cooling plate having a top surface, where the cooling plate contains an aluminum alloy having a coefficient of thermal expansion (CTE) of less than 22 ppm/° C., and a bonding layer securing the bottom surface of the electrostatic chuck and the top surface of the cooling plate, where the bonding layer contains a silicone material.

Abstract: A coated chamber component comprises a body and a protective ceramic coating deposited over a surface of the body, the protective ceramic coating being amorphous and comprising about 8-20% by weight yttrium, about 20-32% by weight aluminum, and about 60-70% by weight oxygen.

Abstract: Substrate supports comprising a plurality of bonded plates forming a single component support body and methods of forming the substrate supports are described. The single component support body has an outer peripheral edge, a top surface and a bottom surface. A pocket is formed in the top surface and has a bottom surface, a depth and an outer peripheral edge. A purge ring is spaced a distance from the outer peripheral edge and comprises at least one opening in the top surface in fluid communication with a purge gas line within the body thickness.

Abstract: Electrostatic chucks (ESCs) for reactor or plasma processing chambers, and methods of fabricating ESCs, are described. In an example, a method of fabricating a substrate support assembly includes providing a ceramic top plate having a top surface with a processing region. A plurality of mesas is formed within the processing region and on the top surface of the ceramic plate. Laser-machining of one or more of the plurality of mesas is performed to reduce or to increase a surface roughness of the one or more of the plurality of mesas.

Abstract: A gas is received through an inlet. A portion of the gas is supplied to an electrostatic chuck. A portion of the gas is re-circulated through a compressor. A pressure of the second portion of the gas is increased. The second portion of the gas is stored in a gas storage.

Abstract: An electrostatic puck assembly includes an upper puck plate, a lower puck plate and a backing plate. The upper puck plate comprises AlN or Al2O3 and has a first coefficient of thermal expansion. The lower puck plate comprises a material having a second coefficient of thermal expansion that approximately matches the first coefficient of thermal expansion and is bonded to the upper puck plate by a first metal bond. The backing plate comprises AlN or Al2O3 and is bonded to the lower puck plate by a second metal bond.

Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.

Abstract: A chamber component for a semiconductor processing chamber includes a body. The chamber component also includes a coating. The coating is a corrosion-resistant coating. The coating is deposited on a surface of the body. The corrosion-resistant coating includes a perfluoroelastomer material.

Abstract: Embodiments of substrate carriers and method of making the same are provided herein. In some embodiments, a substrate carrier includes a substantially planar body formed of an upper layer stacked on a lower layer; and a plurality of pockets formed in the substantially planar body each of which includes a support surface surrounding the pocket for supporting a substrate.

Abstract: Disclosed herein is a substrate support assembly having a ground electrode mesh disposed therein along a side surface of the substrate support assembly. The substrate support assembly has a body. The body has an outer top surface, an outer side surface and an outer bottom surface enclosing an interior of the body. The body has a ground electrode mesh disposed in the interior of the body and adjacent the outer side surface, wherein the ground electrode does not extend through to the outer top surface or the outer side surface.